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127 条记录 (耗时 0.019 秒)

    Methods Of Forming A Non-Volatile Resistive Oxide Memory Cell And Methods Of Forming A Non-Volatile Resistive Oxide Memory Array
    3.
    发明申请
    Methods Of Forming A Non-Volatile Resistive Oxide Memory Cell And Methods Of Forming A Non-Volatile Resistive Oxide Memory Array 有权
    形成非易失性电阻氧化物记忆单元的方法和形成非易失性电阻氧化物存储器阵列的方法

    公开(公告)号：US20100003782A1

    公开(公告)日：2010-01-07

    申请号：US12166604

    申请日：2008-07-02

    申请人： Nishant Sinha ,  John Smythe ,  Bhaskar Srinivasan ,  Gurtej Sandhu ,  Neil Greeley ,  Kunal Parekh

    发明人： Nishant Sinha ,  John Smythe ,  Bhaskar Srinivasan ,  Gurtej Sandhu ,  Neil Greeley ,  Kunal Parekh

    IPC分类号： H01L21/16

    CPC分类号： H01L45/1683 ,  H01L27/2472 ,  H01L45/04 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16

    摘要： A method of forming a non-volatile resistive oxide memory cell includes forming a first conductive electrode of the memory cell as part of a substrate. Metal oxide-comprising material is formed over the first conductive electrode. Etch stop material is deposited over the metal oxide-comprising material. Conductive material is deposited over the etch stop material. A second conductive electrode of the memory cell which comprises the conductive material received is formed over the etch stop material. Such includes etching through the conductive material to stop relative to the etch stop material and forming the non-volatile resistive oxide memory cell to comprise the first and second conductive electrodes having both the metal oxide-comprising material and the etch stop material therebetween. Other implementations are contemplated.

    摘要翻译： 形成非易失性电阻氧化物存储单元的方法包括：形成存储单元的第一导电电极作为衬底的一部分。 含金属氧化物的材料形成在第一导电电极上。 蚀刻停止材料沉积在包含金属氧化物的材料上。 导电材料沉积在蚀刻停止材料上。 包含所接收的导电材料的存储单元的第二导电电极形成在蚀刻停止材料上。 这样包括通过导电材料蚀刻以相对于蚀刻停止材料停止并且形成非易失性电阻氧化物存储单元，以包括具有包含金属氧化物的材料和其间的蚀刻停止材料的第一和第二导电电极。 考虑其他实现。

    Methods of forming devices comprising carbon nanotubes
    8.
    发明授权
    Methods of forming devices comprising carbon nanotubes 有权
    形成包含碳纳米管的器件的方法

    公开(公告)号：US08034315B2

    公开(公告)日：2011-10-11

    申请号：US12235244

    申请日：2008-09-22

    申请人： Nishant Sinha ,  Gurtej S. Sandhu ,  Eugene Marsh ,  Neil Greeley ,  John Smythe

    发明人： Nishant Sinha ,  Gurtej S. Sandhu ,  Eugene Marsh ,  Neil Greeley ,  John Smythe

    IPC分类号： H01L29/72

    CPC分类号： H01L51/0591 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/19 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/149 ,  H01L45/1608 ,  H01L45/1675 ,  H01L45/1683 ,  H01L51/0048 ,  Y10S977/712 ,  Y10S977/721 ,  Y10S977/745 ,  Y10S977/748 ,  Y10S977/764 ,  Y10S977/765 ,  Y10S977/781

    摘要： Some embodiments include devices that contain bundles of CNTs. An undulating topography extends over the CNTs and within spaces between the CNTs. A global maximum lateral width is defined as the greatest lateral width of any of the spaces. A material is directly over the CNTs, with the material being a plurality of particles that have minimum cross-sectional equatorial widths exceeding the global maximum lateral width. Some embodiments include methods in which a plurality of crossed carbon nanotubes are formed over a semiconductor substrate. The CNTs form an undulating upper topography extending across the CNTs and within spaces between the CNTs. A global maximum lateral width is defined as the greatest lateral width of any of the spaces. A material is deposited over the CNTs, with the material being deposited as particles that have minimum cross-sectional equatorial widths exceeding the global maximum lateral width.

    摘要翻译： 一些实施方案包括含有CNT束的装置。 起伏的形貌在碳纳米管之间和CNT之间的空间内延伸。 全局最大横向宽度被定义为任何空间的最大横向宽度。 材料直接在碳纳米管之上，其中材料是具有超过全局最大横向宽度的最小横截面赤道宽度的多个颗粒。 一些实施例包括在半导体衬底上形成多个交叉碳纳米管的方法。 CNT形成延伸跨过CNT并且在CNT之间的空间内的波状上部形貌。 全局最大横向宽度被定义为任何空间的最大横向宽度。 材料沉积在CNT上，其中材料被沉积成具有超过全局最大横向宽度的最小横截面赤道宽度的颗粒。

    Methods of forming a non-volatile resistive oxide memory cell and methods of forming a non-volatile resistive oxide memory array
    10.
    发明授权
    Methods of forming a non-volatile resistive oxide memory cell and methods of forming a non-volatile resistive oxide memory array 有权
    形成非易失性电阻氧化物存储单元的方法和形成非易失性电阻氧化物存储器阵列的方法

    公开(公告)号：US09343665B2

    公开(公告)日：2016-05-17

    申请号：US12166604

    申请日：2008-07-02

    申请人： Nishant Sinha ,  John Smythe ,  Bhaskar Srinivasan ,  Gurtej S. Sandhu ,  Joseph Neil Greeley ,  Kunal R. Parekh

    发明人： Nishant Sinha ,  John Smythe ,  Bhaskar Srinivasan ,  Gurtej S. Sandhu ,  Joseph Neil Greeley ,  Kunal R. Parekh

    IPC分类号： H01L45/00 ,  H01L27/24

    CPC分类号： H01L45/1683 ,  H01L27/2472 ,  H01L45/04 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16

    摘要： A method of forming a non-volatile resistive oxide memory cell includes forming a first conductive electrode of the memory cell as part of a substrate. Metal oxide-comprising material is formed over the first conductive electrode. Etch stop material is deposited over the metal oxide-comprising material. Conductive material is deposited over the etch stop material. A second conductive electrode of the memory cell which comprises the conductive material received is formed over the etch stop material. Such includes etching through the conductive material to stop relative to the etch stop material and forming the non-volatile resistive oxide memory cell to comprise the first and second conductive electrodes having both the metal oxide-comprising material and the etch stop material therebetween. Other implementations are contemplated.

    摘要翻译： 形成非易失性电阻氧化物存储单元的方法包括：形成存储单元的第一导电电极作为衬底的一部分。 含金属氧化物的材料形成在第一导电电极上。 蚀刻停止材料沉积在包含金属氧化物的材料上。 导电材料沉积在蚀刻停止材料上。 包含所接收的导电材料的存储单元的第二导电电极形成在蚀刻停止材料上。 这样包括通过导电材料蚀刻以相对于蚀刻停止材料停止并且形成非易失性电阻氧化物存储单元，以包括具有包含金属氧化物的材料和其间的蚀刻停止材料的第一和第二导电电极。 考虑其他实现。