公开(公告)号：US20090206354A1

公开(公告)日：2009-08-20

申请号：US12230234

申请日：2008-08-26

申请人： Nobuaki Kitano ,  Masahiro Arai ,  Kazuyuki Iizuka

发明人： Nobuaki Kitano ,  Masahiro Arai ,  Kazuyuki Iizuka

IPC分类号： H01L33/00

CPC分类号： H01L33/405 ,  H01L33/0079 ,  H01L33/387 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor light-emitting device includes a support structure, and a light-emitting structure. The support structure includes a support substrate, and a support substrate side bonding layer disposed on one surface of the support substrate. The light-emitting structure includes a light-emitting structure side bonding layer bonded to the support substrate side bonding layer, a reflection region disposed on the support substrate side bonding layer opposite the support substrate, and a semiconductor multilayer structure including a light-emitting layer disposed on the reflection region opposite the light-emitting structure side bonding layer for emitting a light with a predetermined wavelength, and a light-extraction surface disposed on the light-emitting layer opposite the reflection region for reflecting diffusely the light. The reflection region includes a transparent layer of a material with a lower refractive index than that of the semiconductor multilayer structure, and a reflection layer of a metallic material. The transparent layer has such a thickness that interference caused by multiple reflection of light inputted to the transparent layer can be suppressed.

摘要翻译： 半导体发光器件包括支撑结构和发光结构。 支撑结构包括支撑基板和设置在支撑基板的一个表面上的支撑基板侧接合层。 发光结构包括结合到支撑基板侧接合层的发光结构侧接合层，设置在与支撑基板相对的支撑基板侧接合层上的反射区域，以及包括发光层 设置在与发光结构侧接合层相对的反射区域，用于发射具有预定波长的光;以及光提取表面，设置在与反射区域相对的发光层上，用于漫反射地反射光。 反射区域包括具有比半导体多层结构的折射率低的材料的透明层和金属材料的反射层。 透明层具有能够抑制由输入到透明层的光的多次反射引起的干涉的厚度。

公开(公告)号：US08071992B2

公开(公告)日：2011-12-06

申请号：US12230234

申请日：2008-08-26

申请人： Nobuaki Kitano ,  Masahiro Arai ,  Kazuyuki Iizuka

发明人： Nobuaki Kitano ,  Masahiro Arai ,  Kazuyuki Iizuka

IPC分类号： H01L33/00

CPC分类号： H01L33/405 ,  H01L33/0079 ,  H01L33/387 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor light-emitting device includes a support structure, and a light-emitting structure. The support structure includes a support substrate, and a support substrate side bonding layer disposed on one surface of the support substrate. The light-emitting structure includes a light-emitting structure side bonding layer bonded to the support substrate side bonding layer, a reflection region disposed on the support substrate side bonding layer opposite the support substrate, and a semiconductor multilayer structure including a light-emitting layer disposed on the reflection region opposite the light-emitting structure side bonding layer for emitting a light with a predetermined wavelength, and a light-extraction surface disposed on the light-emitting layer opposite the reflection region for reflecting diffusely the light. The reflection region includes a transparent layer of a material with a lower refractive index than that of the semiconductor multilayer structure, and a reflection layer of a metallic material. The transparent layer has such a thickness that interference caused by multiple reflection of light inputted to the transparent layer can be suppressed.

摘要翻译： 半导体发光器件包括支撑结构和发光结构。 支撑结构包括支撑基板和设置在支撑基板的一个表面上的支撑基板侧接合层。 发光结构包括结合到支撑基板侧接合层的发光结构侧接合层，设置在与支撑基板相对的支撑基板侧接合层上的反射区域，以及包括发光层 设置在与发光结构侧接合层相对的反射区域，用于发射具有预定波长的光;以及光提取表面，设置在与反射区域相对的发光层上，用于漫反射地反射光。 反射区域包括具有比半导体多层结构的折射率低的材料的透明层和金属材料的反射层。 透明层具有能够抑制由输入到透明层的光的多次反射引起的干涉的厚度。

公开(公告)号：US07569866B2

公开(公告)日：2009-08-04

申请号：US11497379

申请日：2006-08-02

申请人： Taichiroo Konno ,  Kazuyuki Iizuka ,  Masahiro Arai

发明人： Taichiroo Konno ,  Kazuyuki Iizuka ,  Masahiro Arai

IPC分类号： H01L33/00

CPC分类号： H01L33/14 ,  H01L33/30

摘要： A semiconductor light-emitting device having: a light-emitting portion formed on a semiconductor substrate, the light-emitting portion having an n-type clad layer, an active layer and a p-type clad layer; an As-based contact layer formed on the light-emitting portion, the contact layer being doped with a p-type dopant of 1×1019/cm3 or more; a current spreading layer formed on the contact layer, the current spreading layer being formed of a transparent conductive film of a metal oxide material; and a buffer layer formed between the contact layer and the p-type clad layer or formed being inserted inside of the p-type clad layer. The buffer layer is of an undoped group III/V semiconductor, and the group III/V semiconductor is of a group V element having P (phosphorus) as a main component thereof.

摘要翻译： 一种半导体发光器件，具有：形成在半导体衬底上的发光部分，所述发光部分具有n型覆盖层，有源层和p型覆盖层; 形成在发光部分上的As基接触层，所述接触层掺杂有1×1019 / cm3以上的p型掺杂剂; 形成在所述接触层上的电流扩展层，所述电流扩散层由金属氧化物材料的透明导电膜形成; 以及形成在所述接触层和所述p型覆盖层之间或形成为插入所述p型覆盖层内部的缓冲层。 缓冲层为未掺杂的III / V族III族半导体，III / V族半导体为具有P（磷）作为主要成分的V族元素。

公开(公告)号：US07449722B2

公开(公告)日：2008-11-11

申请号：US11285388

申请日：2005-11-23

申请人： Taichiroo Konno ,  Kazuyuki Iizuka ,  Masahiro Arai ,  Takashi Furuya

发明人： Taichiroo Konno ,  Kazuyuki Iizuka ,  Masahiro Arai ,  Takashi Furuya

IPC分类号： H01L33/00

CPC分类号： H01L33/14 ,  H01L33/02 ,  H01L33/04 ,  H01L33/32

摘要： A semiconductor light emitting element has a first conductive-type cladding layer, an undoped active layer, a second conductive-type cladding layer, and a second conductive-type current spreading layer that are formed on a first conductive-type semiconductor substrate. The second conductive-type cladding layer has a first dopant suppressing layer formed at a portion in the second conductive-type cladding layer, the portion being not in contact with the active layer. The first dopant suppressing layer has a dopant concentration lower than a region in the vicinity of the first dopant suppressing layer.

摘要翻译： 半导体发光元件具有形成在第一导电型半导体基板上的第一导电型包覆层，未掺杂的有源层，第二导电型覆盖层和第二导电型电流扩展层。 第二导电型包覆层具有形成在第二导电型包覆层的一部分上的第一掺杂剂抑制层，该部分不与有源层接触。 第一掺杂剂抑制层的掺杂剂浓度低于第一掺杂剂抑制层附近的区域。

公开(公告)号：US20060220032A1

公开(公告)日：2006-10-05

申请号：US11165568

申请日：2005-06-24

申请人： Masahiro Arai ,  Taichiroo Konno ,  Kazuyuki Iizuka

发明人： Masahiro Arai ,  Taichiroo Konno ,  Kazuyuki Iizuka

IPC分类号： H01L33/00

CPC分类号： H01L33/02 ,  H01L33/14 ,  H01L33/30

摘要： A semiconductor light emitting device has: a semiconductor substrate; a semiconductor layer having an n-type cladding layer, an active layer, a p-type cladding layer and a p-type contact layer, wherein the p-type contact layer is made of an As-based material and located at the top of the semiconductor layer and doped with a p-type dopant at a concentration of 1×1019/cm3 or more; a current spreading layer formed on the semiconductor layer and made of a metal oxide material; and a diffusion prevention layer formed between the p-type contact layer and the p-type cladding layer. The diffusion prevention layer is made of a group III-V semiconductor that has phosphorus as a group V element and has a crystal lattice mismatch ratio of within ±0.3% to the semiconductor substrate.

摘要翻译： 半导体发光器件具有：半导体衬底; 具有n型包覆层，有源层，p型覆层和p型接触层的半导体层，其中p型接触层由基于As的材料制成，位于 半导体层并掺杂浓度为1×10 9 / cm 3以上的p型掺杂剂; 形成在半导体层上并由金属氧化物材料制成的电流扩展层; 以及形成在p型接触层和p型覆层之间的扩散防止层。 扩散防止层由具有磷作为V族元素并且具有与半导体衬底的±0.3％以内的晶格失配比的III-V族半导体制成。

公开(公告)号：US07884381B2

公开(公告)日：2011-02-08

申请号：US12461008

申请日：2009-07-29

申请人： Masahiro Arai ,  Kazuyuki Iizuka

发明人： Masahiro Arai ,  Kazuyuki Iizuka

IPC分类号： H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00 ,  H01L29/22 ,  H01L29/227 ,  H01L29/24

CPC分类号： H01L33/0079 ,  H01L33/387 ,  H01L33/46

摘要： A light emitting device includes a semiconductor multilayer structure having a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active layer. A reflecting layer is provided at a side of one surface of the semiconductor multilayer structure and reflects a light emitted from the active layer. A supporting substrate of Si or Ge is provided at an opposite side of the reflecting layer with respect to the side of the semiconductor multilayer structure and supports the semiconductor multilayer structure via a metal bonding layer. A back surface electrode is provided at an opposite side of the supporting substrate with respect to a side of the metal bonding layer and includes Au alloyed with the support substrate. A hardness of the back surface electrode is higher than a hardness of the Au.

摘要翻译： 发光器件包括具有第一导电类型的第一半导体层，第二导电类型的第二半导体层和有源层的半导体多层结构。 反射层设置在半导体多层结构的一个表面的一侧，并且反射从有源层发射的光。 在反射层的相对于半导体多层结构侧的相反侧设置有Si或Ge的支撑基板，并且经由金属接合层支撑半导体多层结构。 背面电极相对于金属接合层的一侧设置在支撑基板的相对侧，并且包括与支撑基板合金化的Au。 背面电极的硬度高于Au的硬度。

公开(公告)号：US20080093612A1

公开(公告)日：2008-04-24

申请号：US11907976

申请日：2007-10-19

申请人： Taichiroo Konno ,  Kazuyuki Iizuka ,  Masahiro Arai

发明人： Taichiroo Konno ,  Kazuyuki Iizuka ,  Masahiro Arai

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/405

摘要： A plurality of semiconductor layers including an active layer 6 and a light extract layer 4, and a reflective metal film 11 are formed in a semiconductor light emitting device. The light extract layer 4 is formed of a plurality of layers 23, 24 having different composition ratios. An irregularity 22 is formed on the layers 23, 24 including an outermost layer to provide a main surface S as a rough-surface.

摘要翻译： 在半导体发光器件中形成包括有源层6和光提取层4的多个半导体层以及反射金属膜11。 光提取层4由具有不同组成比的多个层23,24形成。 在包括最外层的层23,24上形成凹凸22，以提供作为粗糙表面的主表面S.

公开(公告)号：US20070075328A1

公开(公告)日：2007-04-05

申请号：US11511220

申请日：2006-08-29

申请人： Kazuyuki Iizuka ,  Taichiroo Konno ,  Masahiro Arai

发明人： Kazuyuki Iizuka ,  Taichiroo Konno ,  Masahiro Arai

IPC分类号： H01L33/00

CPC分类号： H01L33/14 ,  H01L33/025 ,  H01L33/30 ,  H01L33/42

摘要： A semiconductor light-emitting device has a semiconductor substrate, an n-type cladding layer, an active layer, a p-type cladding layer, a p-type buffer layer, a p-type contact layer, and a current spreading layer. A part or all of the p-type buffer layer has a low Mg concentration buffer layer with a Mg concentration of 3.0×1017/cm3 or less and a film thickness of 50 nm or more.

摘要翻译： 半导体发光器件具有半导体衬底，n型覆层，有源层，p型覆层，p型缓冲层，p型接触层和电流扩展层。 一部分或全部p型缓冲层具有Mg浓度为3.0×10 17 / cm 3以下的低Mg浓度缓冲层，膜厚为 50nm以上。

公开(公告)号：US20070075327A1

公开(公告)日：2007-04-05

申请号：US11485420

申请日：2006-07-13

申请人： Masahiro Arai ,  Taichiroo Konno ,  Kazuyuki Iizuka ,  Katsuya Akimoto

发明人： Masahiro Arai ,  Taichiroo Konno ,  Kazuyuki Iizuka ,  Katsuya Akimoto

IPC分类号： H01L33/00

CPC分类号： H01L33/14 ,  H01L33/30

摘要： A semiconductor light emitting device has a light-emitting portion formed on a semiconductor substrate, an As-based p-type contact layer formed thereon, a current spreading layer formed thereon of a metal oxide material, and a buffer layer formed between the p-type cladding layer and the p-type contact layer. The buffer layer has a group III/V semiconductor with a p-type conductivity and hydrogen or carbon included intentionally or unavoidably therein, and the buffer layer has a thickness equal to or greater than a diffusion length L of a dopant doped into the p-type contact layer.

摘要翻译： 半导体发光器件具有形成在半导体衬底上的发光部分，形成在其上的As型p型接触层，在其上形成金属氧化物材料的电流扩散层，以及形成在p型接触层之间的缓冲层， 型包覆层和p型接触层。 缓冲层具有p型导电性的III / V族半导体，有意或不可避免地含有氢或碳，缓冲层的厚度等于或大于掺杂到p型导电体中的掺杂剂的扩散长度L， 型接触层。

公开(公告)号：US07535026B2

公开(公告)日：2009-05-19

申请号：US11511220

申请日：2006-08-29

申请人： Kazuyuki Iizuka ,  Taichiroo Konno ,  Masahiro Arai

发明人： Kazuyuki Iizuka ,  Taichiroo Konno ,  Masahiro Arai

IPC分类号： H01L33/00

CPC分类号： H01L33/14 ,  H01L33/025 ,  H01L33/30 ,  H01L33/42

摘要： A semiconductor light-emitting device has a semiconductor substrate, an n-type cladding layer, an active layer, a p-type cladding layer, a p-type buffer layer, a p-type contact layer, and a current spreading layer. A part or all of the p-type buffer layer has a low Mg concentration buffer layer with a Mg concentration of 3.0×1017/cm3 or less and a film thickness of 50 nm or more.

摘要翻译： 半导体发光器件具有半导体衬底，n型覆层，有源层，p型覆层，p型缓冲层，p型接触层和电流扩展层。 一部分或全部p型缓冲层具有Mg浓度为3.0×10 17 / cm 3以下，膜厚为50nm以上的低Mg浓度缓冲层。