摘要:
An operational amplifier has a differential amplifier stage comprising a pair of first PMOS transistors for inputting signals, which are arranged between a positive voltage supply coupled with a first constant current source and a negative voltage supply, wherein second PMOS transistors of a high voltage resistant type, gates of which are biased to a prescribed voltage, are arranged on current paths lying between the first PMOS transistors and the negative voltage supply together with load resistors. Herein, each of drain voltages of the first PMOS transistors is limited to a certain value that is higher than the prescribed voltage by a gate threshold voltage. Therefore, even when the first PMOS transistors are configured of a normal voltage resistant type, it is possible to reliably prevent voltages applied to the first PMOS transistors from exceeding breakdown voltages thereof, thus avoiding unnecessary reduction of an S/N ratio.
摘要:
An input signal (SIN) is inverted by an inverter (101), and the inverted input signal is entered into a tri-state type inverter (104). An output portion of this inverter is connected via a delay path (105) to an input portion of an operational amplifier (106). This operational amplifier owns a hysteresis characteristic with respect to a signal entered thereinto. An exclusive-OR gate circuit (103) controls to set the output state of the inverter to a low impedance state upon receipt of a signal (S11) obtained by inverting the input signal, and controls to set the output state of the inverter to a high impedance state upon receipt of a signal (S16) output from the operational amplifier. As a result, an amplitude of a signal (S15) is limited to a constant amplitude in response to the hysteresis characteristic of the operational amplifier (106), and a delay time is made constant.
摘要:
An electronic volume circuit is provided, which can be driven by a single power source and can therefore be formed by an LSI that can be fabricated in a simple manner using an oxide film and a junction process for a single power source. A first amplifying circuit attenuates the amplitude of a bipolar input signal and converts the attenuated input signal to a unipolar signal, and a variable resistor device controls the degree of attenuation of the first amplifying circuit based on an externally supplied signal.
摘要:
A lateral PNP transistor PB and a lateral NPN transistor NB are serially connected between an input terminal and a reference potential (ground potential). In the transistor PB, a diode D1 is formed. In the transistor NB, a diode D3 is formed. When an ESD of +2000 V is input, the transistor NB turns on, whereas when an ESD of −2000 V is input, the transistor PB turns on. The level of a positive signal capable of being input is limited by the inverse breakdown voltage (e.g., 18 to 50 V) of the diode D3, whereas the level of a negative signal capable of being input is limited by the inverse breakdown voltage (e.g., 13 to 15 V) of the diode D1.
摘要:
A lateral PNP transistor PB and a lateral NPN transistor NB are serially connected between an input terminal and a reference potential (ground potential). In the transistor PB, a diode D1 is formed. In the transistor NB, a diode D3 is formed. When an ESD of +2000 V is input, the transistor NB turns on, whereas when an ESD of −2000 V is input, the transistor PB turns on. The level of a positive signal capable of being input is limited by the inverse breakdown voltage (e.g., 18 to 50 V) of the diode D3, whereas the level of a negative signal capable of being input is limited by the inverse breakdown voltage (e.g., 13 to 15 V) of the diode D1.
摘要:
A lateral PNP transistor PB and a lateral NPN transistor NB are serially connected between an input terminal and a reference potential (ground potential). In the transistor PB, a diode D1 is formed. In the transistor NB, a diode D3 is formed. When an ESD of +2000 V is input, the transistor NB turns on, whereas when an ESD of −2000 V is input, the transistor PB turns on. The level of a positive signal capable of being input is limited by the inverse breakdown voltage (e.g., 18 to 50 V) of the diode D3, whereas the level of a negative signal capable of being input is limited by the inverse breakdown voltage (e.g., 13 to 15 V) of the diode D1.
摘要:
The integrating circuit of the triangular wave generating circuit includes an operational amplifier and a capacitor. Switch elements are alternatively turned ON and capacitors are alternatively recharged by the currents flowing in constant-current circuits thus obtaining a triangular wave on an output terminal. In this practice, when the voltage on the output terminal reaches ±1 V, comparator circuits (41, 42) and a flip-flop including NAND gates change over the switch elements. The currents flowing in the constant-current circuits are controlled depending on the current flowing in a load circuit. The current flowing in the load circuit is controlled by a PLL circuit including a phase comparator circuit, a loop filter, an LPF, an operational amplifier and an FET. This provides an output triangular wave having the same frequency as a clock pulse (CK).
摘要:
A pulse-width modulation circuit comprises a comparator having hysteresis characteristics of positive feedback, and an integrator, whose integrated output is compared with an input signal to produce a pulse-width modulation (PWM) signal having an advanced phase characteristic due to differentiation of the input signal. A switching circuit amplifies the pulse-width modulation signal based on the positive and negative source voltages (VPX, VMX). The amplified pulse-width modulation signal is supplied to a speaker via an LC filter, and it is also negatively fed back to the pulse-width modulation circuit. Since the pulse-width modulation signal whose phase is advanced is transmitted through the LC filter, it is possible to reduce phase revolution in the output of the power amplifier circuit. Thus, it is possible to effect negative feedback on the pulse-width modulation signal in a stable manner.
摘要:
An amplification system of the invention can decrease power consumption in a power amplification section if the power amplification section need not be used. The power consumption in the power amplification section can be decreased by shutting off power feed into a voltage amplification stage by a power control section, and the power feed state into a power amplification stage from a power supply section is not changed. Thus, power feed into the voltage amplification stage of the circuit wherein a large current does not flow needs only to be controlled using limiter means also used for a different application, so that the power consumption of the power amplification section can be decreased without the need for enlarging the circuit scale, with saved space, and simply.
摘要:
A complementary signal generating circuit (301) generates first complementary signals (S1, S2) from a PWM signal. A signal converting circuit (302) converts the first complementary signals to second complementary signals (S3, S4 or S5, S6) having a voltage component based on a negative power supply (VPP−). Among the second-complementary signals, the signals (S3, S4) are supplied to a driving circuit (305), and the signals (S5, S6) are supplied to a current driving circuit (303). In response to the signals (S5, S6), the current driving circuit outputs third complementary signals (H3, H4) having a current component that is directed toward the negative power supply (VPP−), to a driving circuit (304). As a result, the driving circuits (304, 305) complementarily drive power-MOS transistors (401, 402).