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    Method for producing silicon nitride sintered body of complex shape
    1.
    发明授权
    Method for producing silicon nitride sintered body of complex shape 失效
    复杂形状的氮化硅烧结体的制造方法

    公开(公告)号：US4572828A

    公开(公告)日：1986-02-25

    申请号：US701425

    申请日：1985-02-14

    申请人： Nobuhiro Sato ,  Yuji Katsura ,  Haruyuki Ueno

    发明人： Nobuhiro Sato ,  Yuji Katsura ,  Haruyuki Ueno

    IPC分类号： C04B37/00 ,  C04B35/591 ,  C04B35/58

    CPC分类号： C04B35/591

    摘要： Method produces reaction sintered silicon nitride complex shapes. Parent material (moldings of silicon powder-cured resin) and bonding or joint material (silicon powder-uncured resin) are integrally connected by steps of heat-curing the resin in the joint, heating the body thus bonded together to pyrolyze the cured resin and sinter the silicon powder, the pyrolysis gas reducing oxide film on silicon, and sintered parent material and joint material are simultaneously nitrided and integrally connected by continuous silicon nitride.

    摘要翻译： 方法产生反应烧结氮化硅复合物形状。 母材（硅粉末固化树脂的模制品）和接合或接合材料（硅粉未固化树脂）通过热固化接头中的树脂的步骤一体地连接，加热结合在一起的主体以使固化树脂热解， 烧结硅粉末，硅上的裂解气还原氧化膜，烧结母材和接头材料同时氮化并通过连续的氮化硅整体连接。

    Method for producing high-density silicon nitride sintered product
    2.
    发明授权
    Method for producing high-density silicon nitride sintered product 失效
    高密度氮化硅烧结体的制造方法

    公开(公告)号：US4832888A

    公开(公告)日：1989-05-23

    申请号：US87474

    申请日：1987-08-20

    申请人： Nobuhiro Sato ,  Haruyuki Ueno ,  Yuji Katsura ,  Takashi Hamamatu

    发明人： Nobuhiro Sato ,  Haruyuki Ueno ,  Yuji Katsura ,  Takashi Hamamatu

    IPC分类号： C04B35/591

    CPC分类号： C04B35/591

    摘要： A shaped body of silicon nitride enjoying high density, ample shrinkage, and outstanding mechanical strength is produced in a desired pattern by a method of preparing a shaped body comprising Si particles and a compound capable of remaining as SiC or C in the form of film on the surface of the Si particles in a non-oxidative atmosphere at a temperature in the range of 900.degree. to 1,400.degree. C., subjecting the shaped body to sintering and shrinkage of not less than 1% in an atmosphere of inert gas at a temperature exceeding 900.degree. C., and not exceeding the softening point of Si, and subsequently subjecting the resultant sintered shaped body to nitriding in a nitriding atmosphere at a pressure exceeding atmospheric pressure and at a temperature in the range of 1,200.degree. to 1,500.degree. C. In another aspect of the present invention, a method for producing a silicon nitride sintered product entails preparing a molded body by adding, to powdery silicon grains, a compound that decomposes under heating to produce H.sub.2 or hydrocarbon compounds such as CH.sub.4 and C.sub.2 H.sub.6 in a temperature range from 500.degree. C. to 1200.degree. C., subjecting the molded body to a heat treatment in a gas atmosphere of a nitriding gas and/or an inert gas, and then chemically converting silicon into silicon nitride in a nitriding gas at a temperature higher than 1200.degree. C.

    摘要翻译： 通过制备包含Si颗粒和能够以膜形式保留为SiC或C的化合物的成型体的方法，以期望的图案产生具有高密度，充分收缩和优异机械强度的氮化硅成形体， 在非氧化性气氛中在900〜1400℃的温度范围内的Si粒子的表面，在惰性气体气氛中，在成形体的温度下对成形体进行不低于1％的烧结收缩 超过900℃，不超过Si的软化点，随后将所得烧结体在氮气气氛中在超过大气压和1200〜1500℃的温度下进行氮化。 在本发明的另一方面，一种氮化硅烧结体的制造方法，其特征在于，通过向粉末状的硅粒子添加在h下分解的化合物来制备成型体 在500℃〜1200℃的温度范围内进行生成H2或烃化合物如CH4和C2H6，在氮化气体和/或惰性气体的气体气氛中进行热处理， 然后在氮化气体中在高于1200℃的温度下将硅化学转化为氮化硅。

    SiC-Si.sub.3 N.sub.4 Composite system for special heat-resisting ceramic materials and its fabrication method
    4.
    发明授权
    SiC-Si.sub.3 N.sub.4 Composite system for special heat-resisting ceramic materials and its fabrication method 失效
    SiC-Si3N4特殊耐热陶瓷复合材料及其制造方法

    公开(公告)号：US4335217A

    公开(公告)日：1982-06-15

    申请号：US210647

    申请日：1980-11-26

    申请人： Tokuaki Hatta ,  Haruyuki Ueno ,  Yuji Katsura ,  Kazushige Fukuda ,  Hiroshi Kubota

    发明人： Tokuaki Hatta ,  Haruyuki Ueno ,  Yuji Katsura ,  Kazushige Fukuda ,  Hiroshi Kubota

    IPC分类号： C04B35/565 ,  C04B35/571 ,  C04B35/584 ,  C04B35/591 ,  C04B35/56 ,  C04B35/58

    CPC分类号： C04B35/591

    摘要： A SiC-Si.sub.3 N.sub.4 composite system for special heat-resisting ceramic materials which is fabricated by firing in a nitriding gas atmosphere a green compact prepared from and composed of, as starting materials, silicon powder and an organic silicon polymer containing carbon and silicon atoms as the major skeletal components, whereby said composite system, as a final fired compact has an interwoven texture of SiC and Si.sub.3 N.sub.4 with sufficient micro gaps to absorb thermal stresses, wherein the quantitative ratio by weight of SiC to Si.sub.3 N.sub.4 in said composite system being in the range of 5%-20%:95%-80%.

    摘要翻译： 一种用于特殊耐热陶瓷材料的SiC-Si 3 N 4复合体系，其通过在氮化气体气氛中烧制由作为原料的硅粉末和含有碳和硅原子的有机硅聚合物制成并由其构成的生坯 主要骨架组分，其中所述复合体系作为最终的烧结体具有SiC和具有足够微小间隙的Si 3 N 4交织织构以吸收热应力，其中所述复合体系中SiC与Si 3 N 4的重量比在以下范围内 5％-20％：95％-80％。

    Method for bonding ceramics
    7.
    发明授权
    Method for bonding ceramics 失效
    粘结陶瓷的方法

    公开(公告)号：US4832771A

    公开(公告)日：1989-05-23

    申请号：US174194

    申请日：1988-03-28

    申请人： Takashi Hamamatu ,  Nobuhiro Sato ,  Haruyuki Ueno

    发明人： Takashi Hamamatu ,  Nobuhiro Sato ,  Haruyuki Ueno

    IPC分类号： C04B37/00 ,  C04B35/584 ,  C04B35/591 ,  C04B35/64

    CPC分类号： C04B35/591

    摘要： A complex-shaped bonded body of silicon nitride having a high bonding strength of more than 30 kg/mm.sup.2 as flexural strength and continuously homogenous microstructure through the bonded portion can be obtained by the method comprising the following five steps:(a) molding a body from a mixture of silicon powder having a diameter of less than 44 .mu.m and non-oxide ceramics powder having a diameter of less than 44 .mu.m,(b) heating a molded body obtained by step (a) at a temperature of 600 to 1500.degree. C. in a non-oxide atmosphere such as nitrogen or argon gas to sinter said silicon powder and partially convert to silicon nitride retaining 60 to 100 wt. % unreacted silicon powder therein,(c) grinding a surface to be bonded together with other bodies of said presintered body obtained by step (b) to dispose of unreacted silicon thereon,(d) placing a bonding agent containing silicon powder having a diameter of less than 44 .mu.m and polycarboxy silane resin between two bonding surfaces prepared by step (c), pressing together and drying said bonding agent, and(e) sintering the two presintered bodies pressed together in nitrogen atmosphere at a temperature of 1200.degree. to 1500.degree. C. without melting said disposed unreacted silicon.

    摘要翻译： 通过包括以下五个步骤的方法可以获得具有大于30kg / mm 2的高粘合强度的复合形状的粘合体，作为弯曲强度和通过粘合部分的连续均匀的微结构，（a）成型体 从直径小于44μm的硅粉混合物和直径小于44μm的非氧化物陶瓷粉末混合，（b）在600℃的温度下加热由步骤（a）得到的成型体，至 在非氧化物气氛如氮气或氩气中1500℃烧结所述硅粉，并部分转化成保留60至100重量％的氮化硅。 ％未反应的硅粉末，（c）将与步骤（b）获得的所述预烧结体的其它体相结合的表面研磨以在其上处理未反应的硅，（d）将包含直径为 （c）制备的两个粘合面之间的多羧基硅烷树脂，挤压在一起并干燥所述粘合剂，和（e）在氮气气氛中在1200℃至1500℃的温度下烧结两个预烧结体 不熔化所述未反应的硅。

    Process for fabrication of dense-structure refractories which have resistance to spalling
    8.
    发明授权
    Process for fabrication of dense-structure refractories which have resistance to spalling 失效
    具有抗剥落性的致密结构耐火材料的制造工艺

    公开(公告)号：US4310480A

    公开(公告)日：1982-01-12

    申请号：US969766

    申请日：1978-12-15

    申请人： Shyoichiro Fujimoto ,  Haruyuki Ueno

    发明人： Shyoichiro Fujimoto ,  Haruyuki Ueno

    IPC分类号： C04B33/04 ,  C04B35/01 ,  C04B35/043 ,  C04B35/101 ,  C04B35/622 ,  C04B35/64 ,  C04B33/22

    CPC分类号： C04B35/043 ,  C04B35/01 ,  C04B35/101

    摘要： A process by which dense structure refractories that have resistance to spalling may be produced which comprises building up secondary particulates from fine and/or ultra-fine particles of primary particulate, separating the thus prepared secondary particulates, reconstituting the batch within a definite range and proportion of particle size composition, molding the thus reconstituted batch under a predetermined pressure and finally firing the above molded material is disclosed.

    摘要翻译： 可以产生具有抗剥落性的致密结构耐火材料的方法，其包括由初级颗粒的细小颗粒和/或超细颗粒构建二次颗粒，分离由此制备的二次颗粒，将批次重新确定在一定范围内和比例 的粒度组合物，在预定压力下成型如此重构的批料并最终烧制上述模制材料。

    Refractories which have dense-structure as well as spalling resistance and method for fabricating same
    9.
    发明授权
    Refractories which have dense-structure as well as spalling resistance and method for fabricating same 失效
    具有致密结构和耐剥落性的耐火材料及其制造方法

    公开(公告)号：US4125407A

    公开(公告)日：1978-11-14

    申请号：US767258

    申请日：1977-02-10

    申请人： Haruyuki Ueno

    发明人： Haruyuki Ueno

    IPC分类号： C04B35/622 ,  C04B35/043 ,  C04B35/047 ,  C04B35/101 ,  C04B35/48

    CPC分类号： C04B35/101 ,  C04B35/043 ,  C04B35/047

    摘要： This invention relates to dense structure refractories having heterogeneous structure and resistance to spalling whose heterogeneous structure is composed of major high density areas of (1) coarse and intermediate grains of secondary particulate and minor low density areas of (2) fine grains and fine powders of secondary particulate distributed in a zigzag random way at the boundaries between the coarse and intermediate grains, which are fabricated from an overall batch mixture consisting of more than 60% by weight of particles of secondary particulate larger than 0.5 mm and less than 40% by weight of particles of secondary particulate smaller than 0.5 mm in size.

    摘要翻译： 本发明涉及具有异质结构和耐剥离性的致密结构耐火材料，其异质结构由（1）（2）细颗粒的次粒子和次要低密度区域的粗和中粒子的主要高密度区域和细粉末的细粉末组成 二次颗粒以锯齿形随机的方式分布在粗颗粒和中间颗粒之间的边界处，其由由超过60重量％的二次颗粒的颗粒大于0.5mm且小于40重量％的总批料混合物制成 的二次颗粒尺寸小于0.5mm的颗粒。