Semiconductor device
    2.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号:US07719042B2

    公开(公告)日:2010-05-18

    申请号:US11812192

    申请日:2007-06-15

    IPC分类号: H01L27/108

    CPC分类号: H01L27/1104 H01L27/11

    摘要: A lower electrode projects outward from a common end face of an upper electrode and a capacitor film. A protective film, which is made of a different material from the capacitor film, is deposited on top of a part of the lower electrode outside the end face. The protective film also extends to the position at a certain distance inward from the end face, so that it is placed between the capacitor film and the lower electrode. The capacitor film thereby has a stepped surface near the end face due to the presence of the protective film, which suppresses the progress of damage during etching of the upper electrode and the capacitor film. Further, the protective film prevents the occurrence of damage in the lower electrode.

    摘要翻译: 下电极从上电极和电容器膜的公共端面向外突出。 由与电容器膜不同的材料制成的保护膜沉积在端面外部的一部分下部电极的顶部。 保护膜也从端面向内延伸到一定距离的位置,使其保持在电容器膜和下电极之间。 由于存在保护膜,因此电容器膜具有靠近端面的台阶表面,这抑制了上电极和电容器膜的蚀刻期间的损坏进展。 此外,保护膜防止在下电极中发生损坏。

    Semiconductor device
    3.
    发明申请
    Semiconductor device 失效
    半导体器件

    公开(公告)号:US20080001197A1

    公开(公告)日:2008-01-03

    申请号:US11812192

    申请日:2007-06-15

    IPC分类号: H01L27/11 H01L21/8244

    CPC分类号: H01L27/1104 H01L27/11

    摘要: A lower electrode projects outward from a common end face of an upper electrode and a capacitor film. A protective film, which is made of a different material from the capacitor film, is deposited on top of a part of the lower electrode outside the end face. The protective film also extends to the position at a certain distance inward from the end face, so that it is placed between the capacitor film and the lower electrode. The capacitor film thereby has a stepped surface near the end face due to the presence of the protective film, which suppresses the progress of damage during etching of the upper electrode and the capacitor film. Further, the protective film prevents the occurrence of damage in the lower electrode.

    摘要翻译: 下电极从上电极和电容器膜的公共端面向外突出。 由与电容器膜不同的材料制成的保护膜沉积在端面外部的一部分下部电极的顶部。 保护膜也从端面向内延伸到一定距离的位置,使其保持在电容器膜和下电极之间。 由于存在保护膜,因此电容器膜具有靠近端面的台阶表面,这抑制了上电极和电容器膜的蚀刻期间的损坏进展。 此外,保护膜防止在下电极中发生损坏。

    Semiconductor apparatus
    4.
    发明申请
    Semiconductor apparatus 有权
    半导体装置

    公开(公告)号:US20070267760A1

    公开(公告)日:2007-11-22

    申请号:US11798736

    申请日:2007-05-16

    IPC分类号: G11C19/08

    CPC分类号: G11C11/412 H01L27/1104

    摘要: A semiconductor apparatus includes an internal layer where a first power supply line to provide a first power supply to transistors in a layout cell and an internal cell line to connect transistors in the layout cell are placed, an input/output line connected with an input/output terminal of the layout cell is placed, and a shield line which is placed between the internal layer and the input/output line so as to cover the internal layer and the first power supply line.

    摘要翻译: 一种半导体装置,包括内部层,其中设置有用于向布局单元中的晶体管提供第一电源的第一电源线和用于连接布局单元中的晶体管的内部单元线路,与输入/ 放置布局单元的输出端子,以及屏蔽线,其被布置在内层和输入/输出线之间以覆盖内层和第一电源线。