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12 条记录 (耗时 0.022 秒)

    Semiconductor device
    1.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US07719042B2

    公开(公告)日：2010-05-18

    申请号：US11812192

    申请日：2007-06-15

    申请人： Yasuhiro Kawakatsu ,  Hitoshi Abiko ,  Hirofumi Nikaido ,  Nobuyuki Katsuki ,  Michihiro Kobayashi

    发明人： Yasuhiro Kawakatsu ,  Hitoshi Abiko ,  Hirofumi Nikaido ,  Nobuyuki Katsuki ,  Michihiro Kobayashi

    IPC分类号： H01L27/108

    CPC分类号： H01L27/1104 ,  H01L27/11

    摘要： A lower electrode projects outward from a common end face of an upper electrode and a capacitor film. A protective film, which is made of a different material from the capacitor film, is deposited on top of a part of the lower electrode outside the end face. The protective film also extends to the position at a certain distance inward from the end face, so that it is placed between the capacitor film and the lower electrode. The capacitor film thereby has a stepped surface near the end face due to the presence of the protective film, which suppresses the progress of damage during etching of the upper electrode and the capacitor film. Further, the protective film prevents the occurrence of damage in the lower electrode.

    摘要翻译： 下电极从上电极和电容器膜的公共端面向外突出。 由与电容器膜不同的材料制成的保护膜沉积在端面外部的一部分下部电极的顶部。 保护膜也从端面向内延伸到一定距离的位置，使其保持在电容器膜和下电极之间。 由于存在保护膜，因此电容器膜具有靠近端面的台阶表面，这抑制了上电极和电容器膜的蚀刻期间的损坏进展。 此外，保护膜防止在下电极中发生损坏。

    Semiconductor device
    2.
    发明申请
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US20080001197A1

    公开(公告)日：2008-01-03

    申请号：US11812192

    申请日：2007-06-15

    申请人： Yasuhiro Kawakatsu ,  Hitoshi Abiko ,  Hirofumi Nikaido ,  Nobuyuki Katsuki ,  Michihiro Kobayashi

    发明人： Yasuhiro Kawakatsu ,  Hitoshi Abiko ,  Hirofumi Nikaido ,  Nobuyuki Katsuki ,  Michihiro Kobayashi

    IPC分类号： H01L27/11 ,  H01L21/8244

    CPC分类号： H01L27/1104 ,  H01L27/11

    摘要： A lower electrode projects outward from a common end face of an upper electrode and a capacitor film. A protective film, which is made of a different material from the capacitor film, is deposited on top of a part of the lower electrode outside the end face. The protective film also extends to the position at a certain distance inward from the end face, so that it is placed between the capacitor film and the lower electrode. The capacitor film thereby has a stepped surface near the end face due to the presence of the protective film, which suppresses the progress of damage during etching of the upper electrode and the capacitor film. Further, the protective film prevents the occurrence of damage in the lower electrode.

    摘要翻译： 下电极从上电极和电容器膜的公共端面向外突出。 由与电容器膜不同的材料制成的保护膜沉积在端面外部的一部分下部电极的顶部。 保护膜也从端面向内延伸到一定距离的位置，使其保持在电容器膜和下电极之间。 由于存在保护膜，因此电容器膜具有靠近端面的台阶表面，这抑制了上电极和电容器膜的蚀刻期间的损坏进展。 此外，保护膜防止在下电极中发生损坏。

    Semiconductor apparatus
    3.
    发明申请
    Semiconductor apparatus 有权
    半导体装置

    公开(公告)号：US20070267760A1

    公开(公告)日：2007-11-22

    申请号：US11798736

    申请日：2007-05-16

    申请人： Nobuyuki Katsuki ,  Hirofumi Nikaido ,  Michihiro Kobayashi ,  Yasuhiro Kawakatsu

    发明人： Nobuyuki Katsuki ,  Hirofumi Nikaido ,  Michihiro Kobayashi ,  Yasuhiro Kawakatsu

    IPC分类号： G11C19/08

    CPC分类号： G11C11/412 ,  H01L27/1104

    摘要： A semiconductor apparatus includes an internal layer where a first power supply line to provide a first power supply to transistors in a layout cell and an internal cell line to connect transistors in the layout cell are placed, an input/output line connected with an input/output terminal of the layout cell is placed, and a shield line which is placed between the internal layer and the input/output line so as to cover the internal layer and the first power supply line.

    摘要翻译： 一种半导体装置，包括内部层，其中设置有用于向布局单元中的晶体管提供第一电源的第一电源线和用于连接布局单元中的晶体管的内部单元线路，与输入/ 放置布局单元的输出端子，以及屏蔽线，其被布置在内层和输入/输出线之间以覆盖内层和第一电源线。

    Semiconductor device
    8.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US07692190B2

    公开(公告)日：2010-04-06

    申请号：US11433577

    申请日：2006-05-15

    申请人： Nobuyuki Katsuki

    发明人： Nobuyuki Katsuki

    IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/036

    CPC分类号： H01L21/268 ,  H01L23/5258 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： The semiconductor device has a fuse and a fuse opening created above the fuse. The fuse is divided into a plurality of lines at a crossing portion where the fuse crosses with an edge of the fuse opening. The plurality of divided lines of the fuse 101 are in parallel with each other and in perpendicular to the edge of the fuse opening.

    摘要翻译： 半导体器件具有在保险丝上方形成的保险丝和保险丝开口。 保险丝在熔断器与保险丝开口的边缘交叉的交叉部分处分成多条线。 保险丝101的多个分割线彼此平行并且垂直于保险丝开口的边缘。

    Heat resistant, thermoplastic resin composition
    9.
    发明授权
    Heat resistant, thermoplastic resin composition 失效
    耐热，热塑性树脂组合物

    公开(公告)号：US4742115A

    公开(公告)日：1988-05-03

    申请号：US762828

    申请日：1985-08-06

    申请人： Masaaki Mawatari ,  Syuji Tsuchikawa ,  Shinichi Kimura ,  Nobuyuki Katsuki ,  Mitsuo Abe

    发明人： Masaaki Mawatari ,  Syuji Tsuchikawa ,  Shinichi Kimura ,  Nobuyuki Katsuki ,  Mitsuo Abe

    IPC分类号： C08L25/12 ,  C08L51/04 ,  C08L63/00 ,  C08L67/00 ,  C08L69/00 ,  C08L71/00 ,  C08L71/12 ,  C08L77/00 ,  C08L81/00 ,  C08L81/02 ,  C08L81/06 ,  C08L71/04

    CPC分类号： C08L25/12 ,  C08L51/04 ,  C08L71/123 ,  C08L2205/02 ,  C08L63/00 ,  C08L67/00 ,  C08L69/00 ,  C08L71/00 ,  C08L71/12 ,  C08L77/00 ,  C08L81/00 ,  C08L81/02 ,  C08L81/06 ,  Y10S525/905

    摘要： A heat resistant thermoplastic resin composition comprising (a) 5 to 99% by weight of a poly(phenylene ether), (b) 95 to 1% by weight of a thermoplastic resin which is obtained by polymerizing in the absence of a rubber-like polymer a resin constituent mixture comprising an aromatic alkenyl compound, an alkenyl cyanide compound, and, if necessary, other alkenyl monomers copolymerizable with said monomers, and (c) up to 94% by weight of other styrenic resins, said thermoplastic resin (b) comprising (A) 1-50% by weight of a polymer having an alkenyl cyanide compound content of 1% by weight or more but less than 10% by weight, (B) 1-70% by weight of a polymer having an alkenyl cyanide compound content of 10% by weight or more but less than 20% by weight, (C) 5-90% by weight of a polymer having an alkenyl cyanide compound content of 20% by weight or more but less than 40% by weight, and (D) up to 70% by weight of a polymer having an alkenyl cyanide compound content of 40% by weight or more, and having a total alkenyl cyanide compound content of 10 to 40% by weight and an intrinsic viscosity of preferably 0.1- 1.5 dl/g as measured in methyl ethyl ketone at 30.degree. C. The above thermoplastic resin composition is excellent in not only heat resistance but also impact resistance, thermal stability, painting, and surface gloss of molded article.

    摘要翻译： 一种耐热性热塑性树脂组合物，其包含（a）5至99重量％的聚（苯醚），（b）95至1重量％的热塑性树脂，其通过在不存在橡胶状的情况下聚合而获得 聚合物包含芳族烯基化合物，链烯基氰化物化合物和必要时可与所述单体共聚的其它链烯基单体的树脂组合物混合物，和（c）最多94重量％的其它苯乙烯类树脂，所述热塑性树脂（b） 包含（A）1-50重量％的链烯基氰化合物含量为1重量％以上但小于10重量％的聚合物，（B）1-70重量％的具有链烯基氰的聚合物 化合物含量为10重量％以上但小于20重量％，（C）5-氰基氰化合物含量为20重量％以上但小于40重量％的聚合物的5-90重量％ 和（D）至多70重量％的链烯基氰化合物含量为40重量％以上的聚合物 ，并且在30℃下，在甲基乙基酮中测定的全部链烯基氰化合物含量为10〜40重量％，特性粘度优选为0.1〜1.5dl / g。上述热塑性树脂组合物不仅具有优异的热 耐冲击性，也具有耐冲击性，热稳定性，喷涂性和表面光泽度。

    Semiconductor memory
    10.
    发明授权
    Semiconductor memory 有权
    半导体存储器

    公开(公告)号：US08492815B2

    公开(公告)日：2013-07-23

    申请号：US12652299

    申请日：2010-01-05

    申请人： Nobuyuki Katsuki

    发明人： Nobuyuki Katsuki

    IPC分类号： H01L27/108 ,  H01L29/94

    CPC分类号： H01L27/0207 ,  H01L27/10855 ,  H01L27/10888

    摘要： A semiconductor memory includes a DRAM having, as seen in planar view, a first bit line and a second bit line formed on a first active area, a first cell contact formed on the first active area, and a first capacitor contact formed on the first cell contact and which is connected to a capacitor. As seen in planar view, the first cell contact is positioned closer to the second bit line than to the first bit line, and the first capacitor contact is formed offset in a direction approaching the first bit line with respect to the first cell contact.

    摘要翻译： 半导体存储器包括DRAM，如平面图所示，形成在第一有源区上的第一位线和第二位线，形成在第一有源区上的第一单元触点和形成在第一有源区上的第一电容器触点 电池接触并连接到电容器。 如平面图所示，第一单元触点位于比第一位线更靠近第二位线的位置，并且第一电容器触点形​​成为相对于第一单元触点接近第一位线的方向偏移。