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    Process for preparing a crystalline aluminosilicate
    2.
    发明授权
    Process for preparing a crystalline aluminosilicate 失效
    制备结晶硅铝酸盐的方法

    公开(公告)号：US4578259A

    公开(公告)日：1986-03-25

    申请号：US582529

    申请日：1984-02-22

    申请人： Nobuyuki Morimoto ,  Kozo Takatsu ,  Michio Sugimoto

    发明人： Nobuyuki Morimoto ,  Kozo Takatsu ,  Michio Sugimoto

    IPC分类号： B01J29/70 ,  C01B39/44 ,  C07C1/04 ,  C07C1/20 ,  C01B33/28

    CPC分类号： C07C1/044 ,  B01J29/70 ,  C01B39/445 ,  C07C1/043 ,  C07C1/0435 ,  C07C1/20 ,  C07C2529/65

    摘要： Crystalline aluminosilicates, a process for the production thereof and uses therefor are disclosed. The crystalline aluminosilicates are of new crystalline structure, which, as determined after calcination in the air at 550.degree. C., have a composition represented by the general formula (I):pM.sub.2/n O.Al.sub.2 O.sub.3.qSiO.sub.2(the symbols are as defined in the appended claims) and give a principal X-ray diffraction pattern as shown in Table 1. They are used as catalysts for the conversion of synthesis gas or oxygen-containing organic compounds such as alcohol, ether into hydrocarbons.

    摘要翻译： 公开了结晶硅铝酸盐，其制备方法和用途。 结晶硅铝酸盐具有新的结晶结构，其在550℃下在空气中煅烧后测定，具有由通式（I）表示的组成：pM2 / nO.Al2O3.qSiO2（符号如 所附权利要求书），并给出如表1所示的主要X射线衍射图。它们用作将合成气或含氧有机化合物如醇，醚转化为烃的催化剂。

    Laminated substrate manufacturing method and laminated substrate manufactured by the method
    4.
    发明授权
    Laminated substrate manufacturing method and laminated substrate manufactured by the method 有权
    层叠基板的制造方法和通过该方法制造的层压基板

    公开(公告)号：US07858494B2

    公开(公告)日：2010-12-28

    申请号：US11466964

    申请日：2006-08-24

    申请人： Akihiko Endo ,  Hideki Nishihata ,  Nobuyuki Morimoto

    发明人： Akihiko Endo ,  Hideki Nishihata ,  Nobuyuki Morimoto

    IPC分类号： H01L21/30 ,  H01L21/46

    CPC分类号： H01L21/762 ,  H01L21/76254 ,  H01L21/76256 ,  H01L27/1203

    摘要： Adhesion of particles due to static buildup during a laminated substrate manufacturing process is constrained, so as to reduce generation of a void or a blister in a lamination step and improve yield. A laminate 13 is formed by superimposing a first semiconductor substrate 11, which is to be an active layer, on a second semiconductor substrate 12, which is to be a supporting substrate, via an oxide film 11a. Electric resistance of either or both of the first and second semiconductor substrates 11 and 12 before superimposition is 0.005-0.2 Ωcm.

    摘要翻译： 在层叠基板制造过程中由于静电积聚引起的颗粒的粘附受到限制，从而减少层压步骤中的空隙或泡罩的产生并提高产量。 通过将作为有源层的第一半导体基板11经由氧化膜11a叠加在作为支撑基板的第二半导体基板12上而形成层叠体13。 叠加之前的第一和第二半导体基板11和12中的任一个或两者的电阻为0.005-0.2Ω·cm。

    METHOD FOR PRODUCING BONDED WAFER
    5.
    发明申请
    METHOD FOR PRODUCING BONDED WAFER 审中-公开
    生产粘结波的方法

    公开(公告)号：US20100178750A1

    公开(公告)日：2010-07-15

    申请号：US12503784

    申请日：2009-07-15

    申请人： Satoshi Murakami ,  Akihiko Endo ,  Nobuyuki Morimoto ,  Hideki Nishihata

    发明人： Satoshi Murakami ,  Akihiko Endo ,  Nobuyuki Morimoto ,  Hideki Nishihata

    IPC分类号： H01L21/18

    CPC分类号： H01L21/76254 ,  H01L21/76256

    摘要： A bonded wafer is produced by removing a part or all of native oxide films formed on each surface of both a wafer for active layer and a wafer for support substrate to be bonded; forming a uniform oxide film with a thickness of less than 5 nm on at least one surface of these wafers by a given oxide film forming method; bonding the wafer for active layer to the wafer for support substrate through the uniform oxide film; thinning the wafer for active layer; and subjecting the bonded wafer to a given heat treatment in a non-oxidizing atmosphere to substantially remove the uniform oxide film existing in the bonding interface.

    摘要翻译： 通过去除在有源层的晶片和待接合的支撑基板的晶片的每个表面上形成的一部分或全部自然氧化膜来制造键合晶片; 通过给定的氧化膜形成方法在这些晶片的至少一个表面上形成厚度小于5nm的均匀氧化物膜; 通过均匀的氧化膜将用于有源层的晶片结合到用于支撑衬底的晶片; 减薄晶圆的活性层; 并且在非氧化性气氛中使接合晶片进行给定的热处理，以基本上除去存在于接合界面中的均匀氧化膜。

    Method for producing SOI wafer
    6.
    发明授权
    Method for producing SOI wafer 有权
    制造SOI晶圆的方法

    公开(公告)号：US07563697B2

    公开(公告)日：2009-07-21

    申请号：US10570353

    申请日：2004-09-03

    申请人： Nobuyuki Morimoto ,  Hideki Nishihata

    发明人： Nobuyuki Morimoto ,  Hideki Nishihata

    IPC分类号： H01L21/322

    CPC分类号： H01L21/3247 ,  H01L21/76254

    摘要： Hydrogen gas is ion-implanted into a silicon wafer for active layer via an insulating film, and thus ion-implanted wafer is then bonded with a supporting wafer via an insulating film interposed therebetween. This bonded wafer is heated to 500° C., so that a part of the bonded wafer is cleaved and separated, thereby producing an SOI wafer. Subsequently, thus-obtained SOI wafer is subjected to a heat treatment in an argon gas atmosphere. After that, the SOI wafer is subjected to an oxidation process in an oxidizing atmosphere, and thus formed oxide film is removed using an HF solution. Consequently, the surface of the SOI wafer is recrystallized and thus planarized.

    摘要翻译： 通过绝缘膜将氢气离子注入用于有源层的硅晶片，然后将离子注入晶片通过绝缘膜与支撑晶片接合。 将该接合晶片加热至500℃，使得接合晶片的一部分被切割并分离，从而制造SOI晶片。 随后，将由此获得的SOI晶片在氩气气氛中进行热处理。 之后，在氧化气氛中对SOI晶片进行氧化处理，使用HF溶液除去形成的氧化膜。 因此，SOI晶片的表面被再结晶，从而平坦化。

    Method for manufacturing semiconductor substrate
    7.
    发明授权
    Method for manufacturing semiconductor substrate 有权
    半导体衬底的制造方法

    公开(公告)号：US07494899B2

    公开(公告)日：2009-02-24

    申请号：US11105574

    申请日：2005-04-14

    申请人： Akihiko Endo ,  Nobuyuki Morimoto

    发明人： Akihiko Endo ,  Nobuyuki Morimoto

    IPC分类号： H01L21/30

    CPC分类号： H01L21/76254

    摘要： This method for manufacturing a semiconductor substrate is characterized in that the method includes: a step of ion-implanting light element to a predetermined depth position in a single-crystal wafer of which a surface is a cleavage plane; and a step of heat-treating the single-crystal wafer so as to form light-element bubbles along a cleavage plane parallel to the surface of the single-crystal wafer within an ion-implanted region and thereby splitting off a portion of the single-crystal wafer on an ion-implanted side.

    摘要翻译： 该半导体衬底的制造方法的特征在于，该方法包括：将光源离子注入到表面为解理面的单晶晶片中的规定深度位置的工序; 以及在离子注入区域内沿着与单晶晶片的表面平行的解理面形成发光元件气泡的单晶晶片的热处理工序，由此分离出单晶晶片的一部分， 离子注入侧的晶体晶片。

    Method for producing soi wafer
    8.
    发明申请
    Method for producing soi wafer 有权
    生产硅片的方法

    公开(公告)号：US20090023269A1

    公开(公告)日：2009-01-22

    申请号：US10570353

    申请日：2004-09-03

    申请人： Nobuyuki Morimoto ,  Hideki Nishihata

    发明人： Nobuyuki Morimoto ,  Hideki Nishihata

    IPC分类号： H01L21/762

    CPC分类号： H01L21/3247 ,  H01L21/76254

    摘要： Hydrogen gas is ion-implanted into a silicon wafer for active layer via an insulating film, and thus ion-implanted wafer is then bonded with a supporting wafer via an insulating film interposed therebetween. This bonded wafer is heated to 500° C., so that a part of the bonded wafer is cleaved and separated, thereby producing an SOI wafer. Subsequently, thus-obtained SOI wafer is subjected to a heat treatment in an argon gas atmosphere. After that, the SOI wafer is subjected to an oxidation process in an oxidizing atmosphere, and thus formed oxide film is removed using an HF solution. Consequently, the surface of the SOI wafer is recrystallized and thus planarized.

    摘要翻译： 通过绝缘膜将氢气离子注入用于有源层的硅晶片，然后将离子注入晶片通过绝缘膜与支撑晶片接合。 将该接合晶片加热至500℃，使得接合晶片的一部分被切割并分离，从而制造SOI晶片。 随后，将由此获得的SOI晶片在氩气气氛中进行热处理。 之后，在氧化气氛中对SOI晶片进行氧化处理，使用HF溶液除去形成的氧化膜。 因此，SOI晶片的表面被再结晶，从而平坦化。

    Fastening tool
    9.
    发明授权
    Fastening tool 有权
    紧固工具

    公开(公告)号：US08671803B2

    公开(公告)日：2014-03-18

    申请号：US12675332

    申请日：2008-08-20

    申请人： Toshinari Katsunuma ,  Mikio Hanai ,  Yoshitada Arakawa ,  Harutsugu Yoshida ,  Jiro Tsukamoto ,  Nobuyuki Morimoto ,  Noritsugu Okada

    发明人： Toshinari Katsunuma ,  Mikio Hanai ,  Yoshitada Arakawa ,  Harutsugu Yoshida ,  Jiro Tsukamoto ,  Nobuyuki Morimoto ,  Noritsugu Okada

    IPC分类号： B25B21/00

    CPC分类号： B25B21/02 ,  B25B23/00

    摘要： When bolts are fastened to tack a door to a car body by means of a conventional impact wrench, the shavings stick to the surface of the door or car body, thereby to cause the poor coating quality such as a seeding when the inter-coating or finish-coating is performed in the coating procedure. An impact wrench provided is a fastening tool for fastening a bolt gripped by a socket, in a nut. The impact wrench includes a suction cover for covering the surroundings of the socket, and a suction port capable of sucking the atmosphere in the portion covered with the suction cover, and is constituted such that the atmosphere in the suction cover is sucked through the suction port to recover the shavings left at the time of fastening the bolt. This constitution makes it possible to prevent the shavings from being scattered to the surroundings. When the door is temporarily attached at the coating step to a car body, the poor coating quality such as the seeding, as might otherwise be caused by the shavings stuck to the surface of the car body or door, can be prevented and improved.

    摘要翻译： 当通过常规的冲击扳手将螺栓紧固以将车门固定到车身时，刨削物粘附到门或车体的表面，从而当涂层或 在涂布过程中进行精加工。 提供的冲击扳手是用于将由插座夹持的螺栓紧固在螺母中的紧固工具。 所述冲击扳手包括用于覆盖所述插座的周围的吸入罩以及能够吸入由所述吸入盖覆盖的部分中的气氛的吸入口，并且构成为使得所述吸入盖的气氛通过所述吸入口 以恢复在紧固螺栓时留下的刨花。 这种构造使得可以防止刨屑散布到周围环境中。 当门在涂覆步骤中临时安装到车身时，可以防止和改善由粘附在车体或门的表面上的刨花引起的诸如播种的不良涂层质量。

    Method for producing semiconductor substrate
    10.
    发明授权
    Method for producing semiconductor substrate 有权
    半导体衬底的制造方法

    公开(公告)号：US07851337B2

    公开(公告)日：2010-12-14

    申请号：US11801461

    申请日：2007-05-09

    申请人： Satoshi Murakami ,  Nobuyuki Morimoto ,  Hideki Nishihata ,  Akihiko Endo

    发明人： Satoshi Murakami ,  Nobuyuki Morimoto ,  Hideki Nishihata ,  Akihiko Endo

    IPC分类号： H01L21/00 ,  H01L21/30 ,  H01L21/46 ,  H01L21/425

    CPC分类号： H01L21/76254

    摘要： There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having no oxide film wherein hydrogen ions are implanted into a wafer for active layer having no oxide film on its surface to form a hydrogen ion implanted layer, and ions other than hydrogen are implanted up to a position that a depth from the surface side the hydrogen ion implantation is shallower than the hydrogen ion implanted layer, and the wafer for active layer is laminated onto a wafer for support substrate, and then the wafer for active layer is exfoliated at the hydrogen ion implanted layer.

    摘要翻译： 提供了即使在没有氧化膜的层叠晶片中也抑制诸如空隙或起泡的缺陷的发生的方法，其中将氢离子注入到其表面上没有氧化膜的有源层的晶片中以形成氢离子注入层 ，除了氢以外的离子被注入到从氢离子注入的表面侧的深度比氢离子注入层浅的位置，将活性层用的晶片层叠在支撑基板用的晶片上， 活性层晶片在氢离子注入层处被剥离。