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    Methods of forming dielectric material-containing structures
    1.
    发明授权
    Methods of forming dielectric material-containing structures 有权
    形成含介电材料结构的方法

    公开(公告)号：US08603877B2

    公开(公告)日：2013-12-10

    申请号：US13461067

    申请日：2012-05-01

    申请人： Noel Rocklein ,  Chris Carlson ,  Dave Peterson ,  Cunyu Yang ,  Praveen Vaidyanathan ,  Vishwanath Bhat

    发明人： Noel Rocklein ,  Chris Carlson ,  Dave Peterson ,  Cunyu Yang ,  Praveen Vaidyanathan ,  Vishwanath Bhat

    IPC分类号： H01L21/316

    CPC分类号： H01L21/28273 ,  H01L21/02175 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/3142 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/91 ,  H01L29/51 ,  H01L29/513 ,  H01L29/78

    摘要： Some embodiments include dielectric structures. The structures include first and second portions that are directly against one another. The first portion may contain a homogeneous mixture of a first phase and a second phase. The first phase may have a dielectric constant of greater than or equal to 25, and the second phase may have a dielectric constant of less than or equal to 20. The second portion may be entirely a single composition having a dielectric constant of greater than or equal to 25. Some embodiments include electrical components, such as capacitors and transistors, containing dielectric structures of the type described above. Some embodiments include methods of forming dielectric structures, and some embodiments include methods of forming electrical components.

    摘要翻译： 一些实施例包括电介质结构。 这些结构包括彼此直接相对的第一和第二部分。 第一部分可以包含第一相和第二相的均匀混合物。 第一相可以具有大于或等于25的介电常数，并且第二相可以具有小于或等于20的介电常数。第二部分可以是完全是具有大于或等于20的介电常数的单一组成， 等于25.一些实施例包括包含上述类型的电介质结构的电气部件，例如电容器和晶体管。 一些实施方案包括形成电介质结构的方法，并且一些实施方案包括形成电组件的方法。

    Methods of forming dielectric material-containing structures
    2.
    发明授权
    Methods of forming dielectric material-containing structures 有权
    形成含介电材料结构的方法

    公开(公告)号：US08187933B2

    公开(公告)日：2012-05-29

    申请号：US12895535

    申请日：2010-09-30

    申请人： Noel Rocklein ,  Chris Carlson ,  Dave Peterson ,  Cunyu Yang ,  Praveen Vaidyanathan ,  Vishwanath Bhat

    发明人： Noel Rocklein ,  Chris Carlson ,  Dave Peterson ,  Cunyu Yang ,  Praveen Vaidyanathan ,  Vishwanath Bhat

    IPC分类号： H01L27/01

    CPC分类号： H01L21/28273 ,  H01L21/02175 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/3142 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/91 ,  H01L29/51 ,  H01L29/513 ,  H01L29/78

    摘要： Some embodiments include dielectric structures. The structures include first and second portions that are directly against one another. The first portion may contain a homogeneous mixture of a first phase and a second phase. The first phase may have a dielectric constant of greater than or equal to 25, and the second phase may have a dielectric constant of less than or equal to 20. The second portion may be entirely a single composition having a dielectric constant of greater than or equal to 25. Some embodiments include electrical components, such as capacitors and transistors, containing dielectric structures of the type described above. Some embodiments include methods of forming dielectric structures, and some embodiments include methods of forming electrical components.

    摘要翻译： 一些实施例包括电介质结构。 这些结构包括彼此直接相对的第一和第二部分。 第一部分可以包含第一相和第二相的均匀混合物。 第一相可以具有大于或等于25的介电常数，并且第二相可以具有小于或等于20的介电常数。第二部分可以是完全是具有大于或等于20的介电常数的单一组成， 等于25.一些实施例包括包含上述类型的电介质结构的电气部件，例如电容器和晶体管。 一些实施方案包括形成电介质结构的方法，并且一些实施方案包括形成电组件的方法。

    Capacitors Having Dielectric Regions That Include Multiple Metal Oxide-Comprising Materials
    3.
    发明申请
    Capacitors Having Dielectric Regions That Include Multiple Metal Oxide-Comprising Materials 失效
    具有包含多种金属氧化物的材料的介电区域的电容器

    公开(公告)号：US20100315760A1

    公开(公告)日：2010-12-16

    申请号：US12483474

    申请日：2009-06-12

    申请人： Rishikesh Krishnan ,  John Smythe ,  Vishwanath Bhat ,  Noel Rocklein ,  Bhaskar Srinivasan ,  Jeff Hully ,  Chris Carlson

    发明人： Rishikesh Krishnan ,  John Smythe ,  Vishwanath Bhat ,  Noel Rocklein ,  Bhaskar Srinivasan ,  Jeff Hully ,  Chris Carlson

    IPC分类号： H01G4/10

    CPC分类号： H01L28/56 ,  H01G4/10 ,  H01L27/108

    摘要： Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode. A capacitor dielectric region is received between the inner and the outer conductive metal capacitor electrodes and has a thickness no greater than 150 Angstroms. Various combinations of materials of thicknesses and relationships relative one another are disclosed which enables and results in the dielectric region having a dielectric constant k of at least 35 yet leakage current no greater than 1×10−7 amps/cm2 at from −1.1V to +1.1V.

    摘要翻译： 公开了形成电容器的电容器和方法，其包括内部导电金属电容器电极和外部导电金属电容器电极。 电容器电介质区域被容纳在内导电金属电容电极和外导电金属电容器电极之间，并且具有不大于150埃的厚度。 公开了厚度和关系的材料的各种组合，其相互之间可以实现和导致电介质区域的介电常数k至少为35，而在-1.1V至-1.0V的范围内漏电流不大于1×10-7Aps / cm 2 + 1.1V。

    Capacitor dielectric comprising silicon-doped zirconium oxide and capacitor using the same
    5.
    发明授权
    Capacitor dielectric comprising silicon-doped zirconium oxide and capacitor using the same 有权
    包含掺杂硅的氧化锆和使用其的电容器的电容器电介质

    公开(公告)号：US08760845B2

    公开(公告)日：2014-06-24

    申请号：US13370312

    申请日：2012-02-10

    申请人： Noel Rocklein ,  Vishwanath Bhat ,  Chris Carlson

    发明人： Noel Rocklein ,  Vishwanath Bhat ,  Chris Carlson

    IPC分类号： H01G4/06 ,  H01G4/10

    CPC分类号： H01L28/40 ,  H01L21/02159

    摘要： A capacitor structure includes a storage node; a capacitor dielectric on the storage node; and a plate electrode on the capacitor dielectric. The capacitor dielectric may include a Si-doped ZrO2 layer or crystalline ZrSiOx with a Si/(Zr+Si) content ranging between 4-9% by atomic ratio. The capacitor structure further includes an interfacial TiO2/TiON layer between the storage node and the capacitor dielectric.

    摘要翻译： 电容器结构包括存储节点; 存储节点上的电容器电介质; 和电容器电介质上的平板电极。 电容器电介质可以包括Si掺杂的ZrO 2层或Si /（Zr + Si）含量在4-9％原子比范围内的结晶ZrSiO x。 电容器结构还包括存储节点和电容器电介质之间的界面TiO 2 / TiON层。

    CAPACITOR DIELECTRIC COMPRISING SILICON-DOPED ZIRCONIUM OXIDE AND CAPACITOR USING THE SAME
    6.
    发明申请
    CAPACITOR DIELECTRIC COMPRISING SILICON-DOPED ZIRCONIUM OXIDE AND CAPACITOR USING THE SAME 有权
    含有硅氧化锆的电容器电介质和使用其的电容器

    公开(公告)号：US20130208403A1

    公开(公告)日：2013-08-15

    申请号：US13370312

    申请日：2012-02-10

    申请人： Noel Rocklein ,  Vishwanath Bhat ,  Chris Carlson

    发明人： Noel Rocklein ,  Vishwanath Bhat ,  Chris Carlson

    IPC分类号： H01G4/10 ,  C09D1/00

    CPC分类号： H01L28/40 ,  H01L21/02159

    摘要： A capacitor structure includes a storage node; a capacitor dielectric on the storage node; and a plate electrode on the capacitor dielectric. The capacitor dielectric may include a Si-doped ZrO2 layer or crystalline ZrSiOx with a Si/(Zr+Si) content ranging between 4-9% by atomic ratio. The capacitor structure further includes an interfacial TiO2/TiON layer between the storage node and the capacitor dielectric.

    摘要翻译： 电容器结构包括存储节点; 存储节点上的电容器电介质; 和电容器电介质上的平板电极。 电容器电介质可以包括Si掺杂的ZrO 2层或Si /（Zr + Si）含量在4-9％原子比范围内的结晶ZrSiO x。 电容器结构还包括存储节点和电容器电介质之间的界面TiO 2 / TiON层。

    Capacitors Having Dielectric Regions That Include Multiple Metal Oxide-Comprising Materials
    8.
    发明申请
    Capacitors Having Dielectric Regions That Include Multiple Metal Oxide-Comprising Materials 有权
    具有包含多种金属氧化物的材料的介电区域的电容器

    公开(公告)号：US20120320494A1

    公开(公告)日：2012-12-20

    申请号：US13597708

    申请日：2012-08-29

    申请人： Rishikesh Krishnan ,  John Smythe ,  Vishwanath Bhat ,  Noel Rocklein ,  Bhaskar Srinivasan ,  Jeff Hull ,  Chris Carlson

    发明人： Rishikesh Krishnan ,  John Smythe ,  Vishwanath Bhat ,  Noel Rocklein ,  Bhaskar Srinivasan ,  Jeff Hull ,  Chris Carlson

    IPC分类号： H01G4/10

    CPC分类号： H01L28/56 ,  H01G4/10 ,  H01L27/108

    摘要： Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode. A capacitor dielectric region is received between the inner and the outer conductive metal capacitor electrodes and has a thickness no greater than 150 Angstroms. Various combinations of materials of thicknesses and relationships relative one another are disclosed which enables and results in the dielectric region having a dielectric constant k of at least 35 yet leakage current no greater than 1×10−7 amps/cm2 at from −1.1V to +1.1V.

    摘要翻译： 公开了形成电容器的电容器和方法，其包括内部导电金属电容器电极和外部导电金属电容器电极。 电容器电介质区域被容纳在内导电金属电容电极和外导电金属电容器电极之间，并且具有不大于150埃的厚度。 公开了厚度和关系的材料的各种组合，其相互之间可以实现和导致电介质区域的介电常数k至少为35，而在-1.1V至-1.0V的范围内漏电流不大于1×10-7Aps / cm 2 + 1.1V。