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公开(公告)号：US08115137B2
公开(公告)日：2012-02-14
申请号：US12997543
申请日：2008-06-12
申请人： Norihito Kawaguchi , Ryusuke Kawakami , Kenichiro Nishida , Miyuki Masaki , Masaru Morita , Atsushi Yoshinouchi
发明人： Norihito Kawaguchi , Ryusuke Kawakami , Kenichiro Nishida , Miyuki Masaki , Masaru Morita , Atsushi Yoshinouchi
CPC分类号： B23K26/0732 , B23K26/046 , B23K26/0665 , G02B27/0905 , G02B27/0966 , G02B27/48 , H01L21/02678
摘要： In laser annealing using a solid state laser, a focus position of a minor axial direction of a rectangular beam is easily corrected depending on positional variation of a laser irradiated portion of a semiconductor film. By using a minor-axis condenser lens 29 condensing incident light in a minor axial direction and a projection lens 30 projecting light, which comes from the minor-axis condenser lens 29, onto a surface of a semiconductor film 3, laser beam 1 is condensed on the surface of the semiconductor film 3 in the minor axial direction of a rectangular beam. The positional variation of a vertical direction of the semiconductor film 3 in a laser irradiated portion of the semiconductor film 3 is detected by a positional variation detector 31, and the minor-axis condenser lens 29 is moved in an optical axis direction based on a value of the detection.
摘要翻译： 在使用固态激光的激光退火中，根据半导体膜的激光照射部的位置变化容易校正矩形光束的小轴方向的聚焦位置。 通过使用将小轴聚光的次轴聚光透镜29和将来自短轴聚光透镜29的光投射到半导体膜3的表面上的投影透镜30，激光束1被冷凝 在半导体膜3的矩形梁的小轴向的表面上。 半导体膜3的激光照射部分中的半导体膜3的垂直方向的位置变化由位置变化检测器31检测，并且短轴聚光透镜29基于光轴方向在光轴方向上移动 的检测。
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公开(公告)号：US20110008973A1
公开(公告)日：2011-01-13
申请号：US12811818
申请日：2008-05-30
IPC分类号： H01L21/268 , B23K26/06 , B23K26/067 , B23K26/00
CPC分类号： B23K26/0608 , B23K26/0676 , B23K26/0738 , B23K26/082 , H01L21/02532 , H01L21/02678 , H01L21/02686 , H01L21/02691 , H01L21/268
摘要： In the case of a lens array type homogenizer optical system, the incident angle and intensity of a laser beam 1 entering a large-sized lens (long-axis condenser lens 22) of a long-axis condensing optical system, which is provided on the rear side, are changed for every shot by performing laser irradiation while long-axis lens arrays 20a and 20b are reciprocated in a direction corresponding to a long axial direction of a linear beam (X-direction). Therefore, vertical stripes are significantly reduced. Further, the incident angle and intensity of a laser beam 1 entering a large-sized lens (projection lens 30) of a short-axis condensing optical system, which is provided on the rear side, are changed for every shot by performing laser irradiation while short-axis lens arrays 26a and 26b are reciprocated in a direction corresponding to a short axial direction of a linear beam (Y-direction). Therefore, horizontal stripes are significantly reduced.
摘要翻译： 在透镜阵列式均化器光学系统的情况下，入射到入射角度和强度的激光束1进入长轴聚光光学系统的大尺寸透镜（长轴聚光透镜22） 通过在长轴透镜阵列20a和20b沿与线性光束（X方向）的长轴方向对应的方向往复运动的同时通过执行激光照射而改变每一次的后侧。 因此，垂直条纹显着减少。 此外，通过进行激光照射来改变进入设置在后侧的短轴聚光光学系统的大尺寸透镜（投影透镜30）的激光束1的入射角度和强度， 短轴透镜阵列26a和26b在与线性光束（Y方向）的短轴方向对应的方向上往复运动。 因此，水平条纹显着减少。
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公开(公告)号：US08598050B2
公开(公告)日：2013-12-03
申请号：US13001311
申请日：2009-06-19
IPC分类号： H01L21/00
CPC分类号： H01L21/02678 , B23K26/066 , B23K26/0738 , C30B1/023 , C30B29/06
摘要： Disclosed are a laser annealing method and apparatus capable of forming a crystalline semiconductor thin film on the entire surface of a substrate without sacrificing the uniformity of crystallinity in a seam portion in a long-axis direction of laser light, the crystalline semiconductor thin film having good properties and high uniformity to an extent that the seam portion is not visually recognizable. During the irradiation of a linear beam, portions corresponding to the edges of the linear beam are shielded by a mask 10 which is disposed on the optical path of a laser light 2, and the mask 10 is operated so that the amount of shielding is periodically increased and decreased.
摘要翻译： 公开了一种激光退火方法和装置，其能够在不牺牲激光长轴方向的接缝部分中的结晶度的均匀性的基板的整个表面上形成结晶半导体薄膜，该结晶半导体薄膜具有良好的 性能和高均匀性，使得接缝部分不能在视觉上识别。 在直线光束的照射期间，对应于直线光束的边缘的部分被设置在激光2的光路上的掩模10屏蔽，并且掩模10被操作以使屏蔽量周期性地 增加和减少。
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公开(公告)号：US08446924B2
公开(公告)日：2013-05-21
申请号：US13418653
申请日：2012-03-13
IPC分类号： H01S3/10
CPC分类号： B23K26/0608 , B23K26/0676 , B23K26/0738 , B23K26/082 , H01L21/02532 , H01L21/02678 , H01L21/02686 , H01L21/02691 , H01L21/268
摘要： In the case of a lens array type homogenizer optical system, the incident angle and intensity of a laser beam 1 entering a large-sized lens (long-axis condenser lens 22) of a long-axis condensing optical system, which is provided on the rear side, are changed for every shot by performing laser irradiation while long-axis lens arrays 20a and 20b are reciprocated in a direction corresponding to a long axial direction of a linear beam (X-direction). Therefore, vertical stripes are significantly reduced. Further, the incident angle and intensity of a laser beam 1 entering a large-sized lens (projection lens 30) of a short-axis condensing optical system, which is provided on the rear side, are changed for every shot by performing laser irradiation while short-axis lens arrays 26a and 26b are reciprocated in a direction corresponding to a short axial direction of a linear beam (Y-direction). Therefore, horizontal stripes are significantly reduced.
摘要翻译： 在透镜阵列式均化器光学系统的情况下，入射到入射角度和强度的激光束1进入长轴聚光光学系统的大尺寸透镜（长轴聚光透镜22） 通过在长轴透镜阵列20a和20b沿与线性光束（X方向）的长轴方向对应的方向往复运动的同时通过执行激光照射而改变每一次的后侧。 因此，垂直条纹显着减少。 此外，通过进行激光照射来改变进入设置在后侧的短轴聚光光学系统的大尺寸透镜（投影透镜30）的激光束1的入射角度和强度， 短轴透镜阵列26a和26b在与线性光束（Y方向）的短轴方向对应的方向上往复运动。 因此，水平条纹显着减少。
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公开(公告)号：US20110097907A1
公开(公告)日：2011-04-28
申请号：US13001311
申请日：2009-06-19
IPC分类号： H01L21/268 , B23K26/06
CPC分类号： H01L21/02678 , B23K26/066 , B23K26/0738 , C30B1/023 , C30B29/06
摘要： Disclosed are a laser annealing method and apparatus capable of forming a crystalline semiconductor thin film on the entire surface of a substrate without sacrificing the uniformity of crystallinity in a seam portion in a long-axis direction of laser light, the crystalline semiconductor thin film having good properties and high uniformity to an extent that the seam portion is not visually recognizable.During the irradiation of a linear beam, portions corresponding to the edges of the linear beam are shielded by a mask 10 which is disposed on the optical path of a laser light 2, and the mask 10 is operated so that the amount of shielding is periodically increased and decreased.
摘要翻译： 公开了一种激光退火方法和装置，其能够在不牺牲激光长轴方向的接缝部分中的结晶度的均匀性的基板的整个表面上形成结晶半导体薄膜，该结晶半导体薄膜具有良好的 性能和高均匀性，使得接缝部分不能在视觉上识别。 在直线光束的照射期间，对应于直线光束的边缘的部分被设置在激光2的光路上的掩模10屏蔽，并且掩模10被操作以使屏蔽量周期性地 增加和减少。
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公开(公告)号：US08575515B2
公开(公告)日：2013-11-05
申请号：US13002010
申请日：2009-06-17
申请人： Norihito Kawaguchi , Ryusuke Kawakami , Kenichiro Nishida , Jun Izawa , Miyuki Masaki , Masaru Morita
发明人： Norihito Kawaguchi , Ryusuke Kawakami , Kenichiro Nishida , Jun Izawa , Miyuki Masaki , Masaru Morita
IPC分类号： B23K26/00 , B23K26/02 , H01L21/268
CPC分类号： H01L21/268 , B23K26/0853 , B23K26/127 , B23K26/128 , B23K26/147 , B23K26/702 , B23K2103/56 , H01L21/02532 , H01L21/02675 , H01L21/67115
摘要： A laser annealing apparatus is provided that is capable of reducing irradiation unevenness of laser light caused by a refraction phenomenon of the laser light due to fluctuation in the temperature of inert gas. The laser annealing apparatus includes a gas supply unit for supplying inert gas G to at least a laser irradiation area of a workpiece, and a gas temperature controller for regulating the temperature of the inert gas G. The gas temperature controller controls the temperature of the inert gas G supplied to the laser irradiation area so as to decrease a temperature difference between the temperature of the inert gas G and the atmospheric temperature of a space (a room R) that is disposed outside the supply area of the inert gas so the temperature controlled inert gas surrounds the optical path of the laser light.
摘要翻译： 提供一种激光退火装置，其能够减少由于惰性气体的温度波动引起的激光的折射现象引起的激光的照射不均匀性。 激光退火装置包括用于向工件的至少激光照射区域供给惰性气体G的气体供给单元和用于调节惰性气体G的温度的气体温度控制器。气体温度控制器控制惰性气体的温度 气体G供应到激光照射区域，以便降低惰性气体G的温度与设置在惰性气体的供给区域之外的空间（室R）的气氛温度之间的温度差，从而控制温度 惰性气体围绕激光的光路。
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公开(公告)号：US08170072B2
公开(公告)日：2012-05-01
申请号：US12811818
申请日：2008-05-30
IPC分类号： H01S3/10
CPC分类号： B23K26/0608 , B23K26/0676 , B23K26/0738 , B23K26/082 , H01L21/02532 , H01L21/02678 , H01L21/02686 , H01L21/02691 , H01L21/268
摘要： In the case of a lens array type homogenizer optical system, the incident angle and intensity of a laser beam 1 entering a large-sized lens (long-axis condenser lens 22) of a long-axis condensing optical system, which is provided on the rear side, are changed for every shot by performing laser irradiation while long-axis lens arrays 20a and 20b are reciprocated in a direction corresponding to a long axial direction of a linear beam (X-direction). Therefore, vertical stripes are significantly reduced. Further, the incident angle and intensity of a laser beam 1 entering a large-sized lens (projection lens 30) of a short-axis condensing optical system, which is provided on the rear side, are changed for every shot by performing laser irradiation while short-axis lens arrays 26a and 26b are reciprocated in a direction corresponding to a short axial direction of a linear beam (Y-direction). Therefore, horizontal stripes are significantly reduced.
摘要翻译： 在透镜阵列式均化器光学系统的情况下，入射到入射角度和强度的激光束1进入长轴聚光光学系统的大尺寸透镜（长轴聚光透镜22） 通过在长轴透镜阵列20a和20b沿与线性光束（X方向）的长轴方向对应的方向往复运动的同时通过执行激光照射而改变每一次的后侧。 因此，垂直条纹显着减少。 此外，通过进行激光照射来改变进入设置在后侧的短轴聚光光学系统的大尺寸透镜（投影透镜30）的激光束1的入射角度和强度， 短轴透镜阵列26a和26b在与线性光束（Y方向）的短轴方向对应的方向上往复运动。 因此，水平条纹显着减少。
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公开(公告)号：US20110108535A1
公开(公告)日：2011-05-12
申请号：US13002010
申请日：2009-06-17
申请人： Norihito Kawaguchi , Ryusuke Kawakami , Kenichiro Nishida , Jun Izawa , Miyuki Masaki , Masaru Morita
发明人： Norihito Kawaguchi , Ryusuke Kawakami , Kenichiro Nishida , Jun Izawa , Miyuki Masaki , Masaru Morita
IPC分类号： B23K26/00
CPC分类号： H01L21/268 , B23K26/0853 , B23K26/127 , B23K26/128 , B23K26/147 , B23K26/702 , B23K2103/56 , H01L21/02532 , H01L21/02675 , H01L21/67115
摘要： Provided is a laser annealing apparatus capable of reducing irradiation unevenness of laser light caused by a refraction phenomenon of laser light due to fluctuation in the temperature of inert gas.A laser annealing apparatus 1 includes a gas supply unit 10 for supplying inert gas G to at least a laser irradiation area of a workpiece 7 to be processed, and a gas temperature controller 15 for regulating the temperature of the inert gas G. The gas temperature controller 15 controls the temperature of the inert gas G supplied to the laser irradiation area so as to decrease the temperature difference between the temperature of the inert gas G and the atmospheric temperature of a space (a room R) that is disposed outside the supply area of the inert gas so as to surround the optical path of the laser light.
摘要翻译： 提供一种激光退火装置，其能够减少由于惰性气体的温度波动引起的激光折射现象引起的激光的照射不均匀性。 激光退火装置1包括用于将惰性气体G供给到待加工的工件7的至少激光照射区域的气体供给单元10和用于调节惰性气体G的温度的气体温度控制器15.气体温度 控制器15控制提供给激光照射区域的惰性气体G的温度，从而降低惰性气体G的温度与设置在供给区域外的空间（室R）的大气温度之间的温差 的惰性气体，以包围激光的光路。
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公开(公告)号：US20100022102A1
公开(公告)日：2010-01-28
申请号：US11916687
申请日：2006-09-12
申请人： Ryusuke Kawakami , Kenichirou Nishida , Norihito Kawaguchi , Miyuki Masaki , Atsushi Yoshinouchi
发明人： Ryusuke Kawakami , Kenichirou Nishida , Norihito Kawaguchi , Miyuki Masaki , Atsushi Yoshinouchi
IPC分类号： H01L21/268 , H01L21/64
CPC分类号： H01L21/02675 , B23K26/0613 , B23K26/0732 , H01L21/0268 , H01L21/02691 , H01L21/268 , H01L27/1285 , H01L27/1296
摘要： A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.
摘要翻译： 一种激光退火方法，用于通过用激光束照射形成在衬底的表面上的半导体膜来执行激光退火，所述方法包括以下步骤：产生线性偏振矩形激光束，其垂直于前进方向的截面为矩形 具有朝向矩形的长边方向的电场或具有指向长边方向的长轴的椭圆偏振矩形激光束，使矩形激光束被引入到基板的表面，并且设定 矩形激光束的波长长度大约为驻波方向的晶粒的期望尺寸。
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公开(公告)号：US08629522B2
公开(公告)日：2014-01-14
申请号：US13608818
申请日：2012-09-10
申请人： Ryusuke Kawakami , Kenichirou Nishida , Norihito Kawaguchi , Miyuki Masaki , Atsushi Yoshinouchi
发明人： Ryusuke Kawakami , Kenichirou Nishida , Norihito Kawaguchi , Miyuki Masaki , Atsushi Yoshinouchi
CPC分类号： H01L21/02675 , B23K26/0613 , B23K26/0732 , H01L21/0268 , H01L21/02691 , H01L21/268 , H01L27/1285 , H01L27/1296
摘要： A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.
摘要翻译： 一种激光退火方法，用于通过用激光束照射形成在衬底的表面上的半导体膜来执行激光退火，所述方法包括以下步骤：产生线性偏振矩形激光束，其垂直于前进方向的截面为矩形 具有朝向矩形的长边方向的电场或具有指向长边方向的长轴的椭圆偏振矩形激光束，使矩形激光束被引入到基板的表面，并且设定 矩形激光束的波长长度大约为驻波方向的晶粒的期望尺寸。
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