摘要:
The present invention provides semiconductor-nanoparticle-dispersed small silica glass particles that emit bright fluorescent light with high fluorescence quantum yield and high density, compared to the conventional semiconductor-nanoparticle-dispersed small glass particles, and that have excellent fluorescence intensity stability over time; and a process for preparing the same. The semiconductor-nanoparticle-dispersed silica glass particles have a mean particle size of not less than 10 nanometers and not more than 5 micrometers, and contain a hydrolyzed alkoxide and semiconductor nanoparticles at a concentration of not less than 2×10−5 mol/l and not more than 1×10−2 mol/l. The particles emit fluorescent light with a fluorescence quantum yield (quantum yield) of 25% or more (and 60% or more), when dispersed in a solution.
摘要:
Nanoparticles having a core/shell structure consisting of a core comprising a Group III element and a Group V element at a molar ratio of the Group III element to the Group V element in the range of 1.25 to 3.0, and a shell comprising a Group II element and a Group VI element and having a thickness of 0.2 nm to 4 nm, the nanoparticles having a photoluminescence efficiency of 10% or more and a diameter of 2.5 to 10 nm; a method of producing the water-dispersible nanoparticles and a method of producing a glass matrix having the nanoparticles dispersed therein.
摘要:
The present invention provides semiconductor-nanoparticle-dispersed small silica glass particles that emit bright fluorescent light with high fluorescence quantum yield and high density, compared to the conventional semiconductor-nanoparticle-dispersed small glass particles, and that have excellent fluorescence intensity stability over time; and a process for preparing the same. The semiconductor-nanoparticle-dispersed silica glass particles have a mean particle size of not less than 10 nanometers and not more than 5 micrometers, and contain a hydrolyzed alkoxide and semiconductor nanoparticles at a concentration of not less than 2×10−5 mol/l and not more than 1×10−2 mol/l. The particles emit fluorescent light with a fluorescence quantum yield (quantum yield) of 25% or more (and 60% or more), when dispersed in a solution.
摘要:
The present invention provides a novel fluorescent material which has a luminance higher than that of the conventional rare earth ion-dispersed fluorescent materials and is excellent in light resistance and long-term stability, and also an optical device, such as a high-luminance display panel or lighting equipment, which uses such a fluorescent material. Semiconductor ultrafine particles are characterized by maintaining 50% or more fluorescence quantum yield of photoluminescence when they are kept dispersed in water at 10° C. to 20° C. in air for 5 days. The fluorescent material is obtained by dispersing such semiconductor ultrafine particles in a glass matrix using a sol-gel process.
摘要:
The present invention provides a novel fluorescent material which has a luminance higher than that of the conventional rare earth ion-dispersed fluorescent materials and is excellent in light resistance and long-term stability, and also an optical device, such as a high-luminance display panel or lighting equipment, which uses such a fluorescent material. Semiconductor ultrafine particles are characterized by maintaining 50% or more fluorescence quantum yield of photoluminescence when they are kept dispersed in water at 10° C. to 20° C. in air for 5 days. The fluorescent material is obtained by dispersing such semiconductor ultrafine particles in a glass matrix using a sol-gel process.
摘要:
This invention provides a novel phosphor material that has better brightness than conventional phosphors using dispersed rare earth ions, and that possesses excellent light resistance, temporal stability, and the like, and a light-emitting device with high brightness comprising such phosphor material and an excitation ultraviolet light source corresponding to the properties thereof. A phosphor comprising a silicon-containing solid matrix and semiconductor superfine particles dispersed therein at a concentration of 5×10−4 to 1×10−2 mol/L, said semiconductor superfine particles having a fluorescence quantum yield of 3% or greater and a diameter of 1.5 to 5 nm, and a light-emitting device including said phosphor and a light source for excitation light with an intensity of 3 to 800 W/cm2.
摘要:
An object of the present invention is to reduce the incompleteness of the surface state due to lattice constant and steric hindrance, which was heretofore nearly unavoidable, in the surface treatment of light-emitting semiconductor nanoparticles. The present invention provides an excellent luminescent material that has enhanced photoluminescence efficiency, reduced photoluminescence spectrum width, and increased chemical resistance. Specifically, the present invention provides a luminescent material comprising semiconductor nanoparticles having a mean particle size of 2 to 12 nm and a band gap of 3.8 eV or less, each of the semiconductor nanoparticles being coated with a silicon-containing layer, the semiconductor nanoparticles in the luminescent material having a peak emission wavelength 20 nm or more towards the longer-wavelength side than the peak emission wavelength of the semiconductor nanoparticles alone.
摘要:
An object of the present invention is to prepare a fine particle with high durability and high brightness, in which semiconductor nanoparticles are assembled. The present invention provides fluorescent fine particles comprising Cd- and Se-containing semiconductor nanoparticles dispersed in silicon-containing fine particles, wherein the average particle size of the silicon-containing fine particles is 20 to 100 nm, and the number of semiconductor nanoparticles dispersed in the silicon-containing fine particles is 10 or more.
摘要:
This invention provides a novel phosphor material that has better brightness than conventional phosphors using dispersed rare earth ions, and that possesses excellent light resistance, temporal stability, and the like, and a light-emitting device with high brightness comprising such phosphor material and an excitation ultraviolet light source corresponding to the properties thereof. A phosphor comprising a silicon-containing solid matrix and semiconductor superfine particles dispersed therein at a concentration of 5×10−4 to 1×10−2 mol/L, said semiconductor superfine particles having a fluorescence quantum yield of 3% or greater and a diameter of 1.5 to 5 nm, and a light-emitting device including said phosphor and a light source for excitation light with an intensity of 3 to 800 W/cm2.
摘要:
In a system (apparatus and method) which employs a light absorbent material surrounded by an optically transparent matrix as a recording medium and in which the presence or absence of emission light of a specific wavelength from unity of the light absorbent material is used for optical writing and reading, the light emitted in response to reading light is condensed and spectrally diffracted and the light intensity is detected for each specific wavelength and related to recorded information.