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    Thin film magnetic head and method for fabricating the same
    3.
    发明授权
    Thin film magnetic head and method for fabricating the same 失效
    薄膜磁头及其制造方法

    公开(公告)号：US06751070B2

    公开(公告)日：2004-06-15

    申请号：US10153689

    申请日：2002-05-24

    申请人： Noriyuki Ito ,  Kosuke Tanaka ,  Koichi Terunuma

    发明人： Noriyuki Ito ,  Kosuke Tanaka ,  Koichi Terunuma

    IPC分类号： G11B539

    CPC分类号： B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3932 ,  G11B5/3967 ,  Y10T29/49052

    摘要： A first and a second longitudinal bias-applying films are formed via a first mask at both sides of a magnetoresistive effective element film so that the difference in surface level between the magnetoresistive effective element film and the first and the second longitudinal bias-applying films is set within ±20 nm. Then, a first and a second electrode films are formed so as to cover edge portions of the magnetoresistive effective element film and the first and the second longitudinal bias-applying films.

    摘要翻译： 通过第一掩模在磁阻有效元件膜的两侧形成第一和第二纵向偏置施加膜，使得磁阻有效元件膜与第一和第二纵向偏置施加膜之间的表面水平差异为 设置在±20 nm以内。 然后，形成第一和第二电极膜，以覆盖磁阻有效元件膜和第一和第二纵向偏置施加膜的边缘部分。

    Thin-film magnetic head and method of manufacturing same, head gimbal assembly, and hard disk drive
    4.
    发明授权
    Thin-film magnetic head and method of manufacturing same, head gimbal assembly, and hard disk drive 有权
    薄膜磁头及其制造方法，磁头万向节组件和硬盘驱动器

    公开(公告)号：US06927950B2

    公开(公告)日：2005-08-09

    申请号：US10193316

    申请日：2002-07-12

    申请人： Noriyuki Ito ,  Kosuke Tanaka ,  Koichi Terunuma

    发明人： Noriyuki Ito ,  Kosuke Tanaka ,  Koichi Terunuma

    IPC分类号： G11B5/39 ,  G11B5/596

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/59683 ,  G11B2005/3996

    摘要： A read head comprises an MR element, two bias field applying layers, and two conductive layers. The two bias field applying layers are adjacent to both side portions of the MR element, and apply a bias magnetic field to the MR element along the longitudinal direction. The two conductive layers feed a sense current to the MR element, each of the conductive layers being disposed to be adjacent to one of surfaces of each of the bias field applying layers and to overlap one of surfaces of the MR element. The conductive layers are each made of a gold alloy having a resistivity of less than 22 μΩ·cm and a hardness as high as or higher than the hardness of a material used for making the bias field applying layers.

    摘要翻译： 读头包括MR元件，两个偏置场施加层和两个导电层。 两个偏置场施加层与MR元件的两侧部分相邻，并且沿MR方向向MR元件施加偏置磁场。 两个导电层将感应电流馈送到MR元件，每个导电层被设置为与每个偏置场施加层的一个表面相邻并且与MR元件的一个表面重叠。 导电层各自由电阻率小于22μΩ·cm的金合金和高于或高于用于制造偏压场施加层的材料的硬度的硬度制成。

    Thin film magnetic head and method of manufacturing the same
    5.
    发明授权
    Thin film magnetic head and method of manufacturing the same 失效
    薄膜磁头及其制造方法

    公开(公告)号：US06731474B2

    公开(公告)日：2004-05-04

    申请号：US09991994

    申请日：2001-11-26

    申请人： Koichi Terunuma ,  Ken-ichi Takano ,  Noriyuki Ito

    发明人： Koichi Terunuma ,  Ken-ichi Takano ,  Noriyuki Ito

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/11 ,  G11B5/3143 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996

    摘要： Provided are a thin film magnetic head and a method of manufacturing the same, which is capable of high density recording and obtaining stable output. The thin film magnetic head includes an MR film sandwiched in between first and second shield layers. The first shield layer includes an inner layer, a magnetization stabilizing layer, an underlayer, and an outer layer laminated in order from the MR film. The second shield layer includes an inner layer, a magnetization stabilizing layer, an isolating layer, and an outer layer laminated in order from the MR film. The magnetization stabilizing layers are formed of antiferromagnetic material, so as to control the direction of magnetization of the inner layers.

    摘要翻译： 提供一种薄膜磁头及其制造方法，其能够进行高密度记录并获得稳定的输出。 薄膜磁头包括夹在第一和第二屏蔽层之间的MR膜。 第一屏蔽层包括从MR膜顺序层叠的内层，磁化稳定层，底层和外层。 第二屏蔽层包括从MR膜顺序层叠的内层，磁化稳定层，隔离层和外层。 磁化稳定层由反铁磁材料形成，以便控制内层的磁化方向。

    Magnetoresistance effect film and magnetoresistance effect type head
    6.
    发明授权
    Magnetoresistance effect film and magnetoresistance effect type head 有权
    磁阻效应膜和磁阻效应型头

    公开(公告)号：US06563681B1

    公开(公告)日：2003-05-13

    申请号：US09542912

    申请日：2000-04-04

    申请人： Tetsuro Sasaki ,  Koichi Terunuma ,  Hiroaki Kawashima ,  Noriyuki Ito

    发明人： Tetsuro Sasaki ,  Koichi Terunuma ,  Hiroaki Kawashima ,  Noriyuki Ito

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  H01F10/3268

    摘要： A soft magnetic layer constituting a spin valve type magnetoresistance effect film comprises a multilayered body having at least two layers and including a first soft magnetic layer substantially made of Co or CoFe, and a second soft magnetic layer substantially made of NiFeX (wherein X represents at least one selected from Ta and Nb) in the order named from the side of a non-magnetic metal layer. More preferably, the soft magnetic layer comprises a multilayered body having at least three layers and including a first soft magnetic layer substantially made of Co or CoFe, a third soft magnetic layer substantially made of NiFe, and a second soft magnetic layer substantially made of NiFeX (wherein X represents at least one selected from Ta and Nb) in the order named from the side of the non-magnetic metal layer. Therefore, the detection sensitivity of a magnetic signal and the output of the magnetic head can be improved. Further, the linearity of the derived signal is also excellent.

    摘要翻译： 构成自旋阀型磁阻效应膜的软磁性层包括具有至少两层的多层体，并且包括基本上由Co或CoFe制成的第一软磁性层和基本上由NiFeX制成的第二软磁性层（其中X表示 从Ta和Nb中选择的至少一种）以非磁性金属层的一侧命名。 更优选地，软磁性层包括具有至少三层的多层体，其包括基本由Co或CoFe制成的第一软磁性层，基本上由NiFe制成的第三软磁性层，以及基本由NiFeX制成的第二软磁性层 （其中X表示选自Ta和Nb中的至少一种）以从非磁性金属层的一侧命名的顺序。 因此，可以提高磁信号的检测灵敏度和磁头的输出。 此外，导出的信号的线性也很好。

    Manufacturing method of spin valve magnetoresistive effect element and manufacturing method of thin-film magnetic head with the element
    9.
    发明授权
    Manufacturing method of spin valve magnetoresistive effect element and manufacturing method of thin-film magnetic head with the element 有权
    自旋阀磁阻效应元件的制造方法和薄膜磁头与元件的制造方法

    公开(公告)号：US06364964B1

    公开(公告)日：2002-04-02

    申请号：US09655404

    申请日：2000-09-05

    申请人： Tetsuro Sasaki ,  Noriyuki Ito ,  Koichi Terunuma

    发明人： Tetsuro Sasaki ,  Noriyuki Ito ,  Koichi Terunuma

    IPC分类号： H01F1032

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3163 ,  G11B5/3903 ,  H01F10/324 ,  H01F10/3268 ,  H01F41/302 ,  H01L43/12 ,  Y10T29/49034

    摘要： The SVMR element has a non-magnetic metallic thin-film layer, first and second ferromagnetic thin-film layers (free and pinned layers) formed to sandwich the non-magnetic metallic thin-film layer and an anti-ferromagnetic thin-film layer formed in contact with a surface of the second ferromagnetic thin-film layer. This surface is opposite to the non-magnetic metallic thin-film layer. The first ferromagnetic thin-film layer has a two-layers structure of a NiFe layer and a CoFe layer. The manufacturing method includes a step of depositing the first ferromagnetic thin-film layer, the non-magnetic metallic thin-film layer, the second ferromagnetic thin-film layer and the anti-ferromagnetic thin-film layer, and a step of annealing, thereafter, the deposited layers so that change in magnetostriction depending upon variation of a thickness of the NiFe layer becomes small.

    摘要翻译： SVMR元件具有非磁性金属薄膜层，形成为夹着非磁性金属薄膜层的第一和第二铁磁薄膜层（自由和被钉扎层）和形成的反铁磁性薄膜层 与第二铁磁性薄膜层的表面接触。 该表面与非磁性金属薄膜层相反。 第一铁磁性薄膜层具有NiFe层和CoFe层的两层结构。 该制造方法包括沉积第一铁磁薄膜层，非磁性金属薄膜层，第二铁磁性薄膜层和反铁磁性薄膜层的步骤以及退火步骤 沉积层，使得依赖于NiFe层的厚度变化的磁致伸缩变化变小。