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公开(公告)号：US10566377B2
公开(公告)日：2020-02-18
申请号：US16130309
申请日：2018-09-13
发明人： Xin Wang , Dajing Yang , Qin Wang , Duli Mao , Dyson Hsin-Chih Tai
IPC分类号： H01L27/146
摘要： An image sensor includes a substrate, a plurality of light sensitive pixels, a first plurality of color filters, a plurality of reflective sidewalls, and a second plurality of color filters. The light sensitive pixels are formed on said substrate. The first plurality of color filters is disposed over a first group of the light sensitive pixels. The reflective sidewalls are formed on each side of each of the first plurality of color filters. The second plurality of color filters are disposed over a second group of light sensitive pixels and each color filter of the second plurality of color filters is separated from each adjacent filter of said first plurality of color filters by one of the reflective sidewalls. In a particular embodiment an etch-resistant layer is disposed over the first plurality of color filters and the second group of light sensitive pixels.
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公开(公告)号：US10334191B1
公开(公告)日：2019-06-25
申请号：US15910883
申请日：2018-03-02
发明人： Dajiang Yang , Zhiyong Zhan , Chen-wei Lu , Duli Mao , Xin Wang , Keiji Mabuchi
IPC分类号： H04N5/335 , H04N5/355 , H01L27/146 , H04N5/378
摘要： A pixel cell includes a second photodiode laterally surrounding a first photodiode in semiconductor material. The first and second photodiodes are adapted to photogenerate image charge in response to incident light. A floating diffusion is disposed in the semiconductor material proximate to an outer perimeter of the second photodiode. A first transfer gate is disposed proximate to the semiconductor material over a first channel region between the first and second photodiodes. The first transfer gate is coupled to transfer the image charge from the first photodiode to the second photodiode. A second transfer gate is disposed proximate to the semiconductor material over a second channel region between the second photodiode and the floating diffusion. The second transfer gate is coupled to transfer the image charge from the second photodiode to the floating diffusion.
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公开(公告)号：US20190013348A1
公开(公告)日：2019-01-10
申请号：US16130309
申请日：2018-09-13
发明人： Xin Wang , Dajiang Yang , Qin Wang , Duli Mao , Dyson Hsin-Chih Tai
IPC分类号： H01L27/146
CPC分类号： H01L27/14685 , H01L27/14621 , H01L27/14629
摘要： An image sensor includes a substrate, a plurality of light sensitive pixels, a first plurality of color filters, a plurality of reflective sidewalls, and a second plurality of color filters. The light sensitive pixels are formed on said substrate. The first plurality of color filters is disposed over a first group of the light sensitive pixels. The reflective sidewalls are formed on each side of each of the first plurality of color filters. The second plurality of color filters are disposed over a second group of light sensitive pixels and each color filter of the second plurality of color filters is separated from each adjacent filter of said first plurality of color filters by one of the reflective sidewalls. In a particular embodiment an etch-resistant layer is disposed over the first plurality of color filters and the second group of light sensitive pixels.
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公开(公告)号：US20210337169A1
公开(公告)日：2021-10-28
申请号：US16855857
申请日：2020-04-22
发明人： Qingfei Chen , Rui Wang , Wei Wei Wang , Zhiyong Zhan , Xin Wang , Qingwei Shan , Kenny Geng
IPC分类号： H04N9/04 , H04N5/369 , H04N5/3745 , H04N5/378
摘要： An imaging device includes groupings of photodiodes having four photodiodes. A transfer transistor is between each photodiode and a floating diffusion. Each floating diffusion is coupled to up to two photodiodes per grouping at a time through transfer transistors. A buffer transistor is coupled to each floating diffusion. The buffer transistors may be in a first or second grouping of buffer transistors. A first bit line is coupled to up to two buffer transistors of the first grouping and a second bit line is coupled to up to two buffer transistors of the second grouping of buffer transistors at a time. A color filter array including a plurality of groupings of color filters is disposed over respective photodiodes of the photodiode array, wherein each grouping of color filters includes four color filters having a same color, wherein each grouping of color filters overlaps two groupings of photodiodes.
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公开(公告)号：US11716546B2
公开(公告)日：2023-08-01
申请号：US17649890
申请日：2022-02-03
发明人： Qingfei Chen , Rui Wang , Wei Wei Wang , Zhiyong Zhan , Xin Wang , Qingwei Shan , Kenny Geng
IPC分类号： H04N5/374 , H04N25/11 , H04N25/75 , H04N25/77 , H04N25/704 , H01L27/146
CPC分类号： H04N25/11 , H04N25/704 , H04N25/75 , H04N25/77 , H01L27/14621 , H01L27/14645
摘要： An imaging device includes groupings of photodiodes having four photodiodes. A transfer transistor is between each photodiode and a floating diffusion. Each floating diffusion is coupled to up to two photodiodes per grouping at a time through transfer transistors. A buffer transistor is coupled to each floating diffusion. The buffer transistors may be in a first or second grouping of buffer transistors. A first bit line is coupled to up to two buffer transistors of the first grouping and a second bit line is coupled to up to two buffer transistors of the second grouping of buffer transistors at a time. A color filter array including a plurality of groupings of color filters is disposed over respective photodiodes of the photodiode array, wherein each grouping of color filters includes four color filters having a same color, wherein each grouping of color filters overlaps two groupings of photodiodes.
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公开(公告)号：US20220159222A1
公开(公告)日：2022-05-19
申请号：US17649890
申请日：2022-02-03
发明人： Qingfei Chen , Rui Wang , Wei Wei Wang , Zhiyong Zhan , Xin Wang , Qingwei Shan , Kenny Geng
IPC分类号： H04N9/04 , H04N5/369 , H04N5/378 , H04N5/3745
摘要： An imaging device includes groupings of photodiodes having four photodiodes. A transfer transistor is between each photodiode and a floating diffusion. Each floating diffusion is coupled to up to two photodiodes per grouping at a time through transfer transistors. A buffer transistor is coupled to each floating diffusion. The buffer transistors may be in a first or second grouping of buffer transistors. A first bit line is coupled to up to two buffer transistors of the first grouping and a second bit line is coupled to up to two buffer transistors of the second grouping of buffer transistors at a time. A color filter array including a plurality of groupings of color filters is disposed over respective photodiodes of the photodiode array, wherein each grouping of color filters includes four color filters having a same color, wherein each grouping of color filters overlaps two groupings of photodiodes.
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公开(公告)号：US09955090B2
公开(公告)日：2018-04-24
申请号：US15215139
申请日：2016-07-20
发明人： Dajiang Yang , Gang Chen , Oray Orkun Cellek , Xin Wang , Chen-Wei Lu , Duli Mao , Dyson H. Tai
IPC分类号： H04N5/355 , H04N9/04 , H04N5/378 , H01L27/146
CPC分类号： H04N5/35563 , H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/14643 , H04N5/37457 , H04N5/378 , H04N9/045
摘要： An image sensor includes a plurality of photodetectors that are identically sized and fabricated in semiconductor material with identical semiconductor processing conditions. The photodetectors are organized into virtual high-low sensitivity groupings, each including a first photodetector and a second photodetector. A plurality of attenuators is disposed over the semiconductor material. Each one of the plurality of attenuators is disposed along an optical path between a microlens and the first photodetector of each virtual high-low sensitivity grouping such that all incident light directed into the first photodetector is directed through a respective one of the plurality of attenuators. There is no attenuator along a second optical path between a microlens and the second photodetector of each virtual high-low sensitivity grouping such that all the incident light directed into the second photodetector is not directed through one of the plurality of attenuators.
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公开(公告)号：US20180090538A1
公开(公告)日：2018-03-29
申请号：US15276000
申请日：2016-09-26
发明人： Xin Wang , Dajiang Yang , Qin Wang , Duli Mao , Dyson Hsin-Chih Tai
IPC分类号： H01L27/146
CPC分类号： H01L27/14685 , H01L27/14621 , H01L27/14629
摘要： An image sensor includes a substrate, a plurality of light sensitive pixels, a first plurality of color filters, a plurality of reflective sidewalls, and a second plurality of color filters. The light sensitive pixels are formed on said substrate. The first plurality of color filters is disposed over a first group of the light sensitive pixels. The reflective sidewalls are formed on each side of each of the first plurality of color filters. The second plurality of color filters are disposed over a second group of light sensitive pixels and each color filter of the second plurality of color filters is separated from each adjacent filter of said first plurality of color filters by one of the reflective sidewalls. In a particular embodiment an etch-resistant layer is disposed over the first plurality of color filters and the second group of light sensitive pixels.
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公开(公告)号：US20180027196A1
公开(公告)日：2018-01-25
申请号：US15215139
申请日：2016-07-20
发明人： Dajiang Yang , Gang Chen , Oray Orkun Cellek , Xin Wang , Chen-Wei Lu , Duli Mao , Dyson H. Tai
IPC分类号： H04N5/355 , H04N9/04 , H01L27/146 , H04N5/378
CPC分类号： H04N5/35563 , H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/14643 , H04N5/37457 , H04N5/378 , H04N9/045
摘要： An image sensor includes a plurality of photodetectors that are identically sized and fabricated in semiconductor material with identical semiconductor processing conditions. The photodetectors are organized into virtual high-low sensitivity groupings, each including a first photodetector and a second photodetector. A plurality of attenuators is disposed over the semiconductor material. Each one of the plurality of attenuators is disposed along an optical path between a microlens and the first photodetector of each virtual high-low sensitivity grouping such that all incident light directed into the first photodetector is directed through a respective one of the plurality of attenuators. There is no attenuator along a second optical path between a microlens and the second photodetector of each virtual high-low sensitivity grouping such that all the incident light directed into the second photodetector is not directed through one of the plurality of attenuators.
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公开(公告)号：US11122259B2
公开(公告)日：2021-09-14
申请号：US16793345
申请日：2020-02-18
发明人： Zhiyong Zhan , Tongtong Yu , Xin Wang , Liang Zuo , Kenny Geng
摘要： A test voltage sample and hold circuitry is disclosed in a readout circuitry of an image sensor. This circuitry samples a voltage at demand value based on a ramp voltage shared by the ADC comparators of the readout circuitry. The value of the sampled voltage is controlled by a control circuitry which is able to predict and calculate at what time a ramp generator may carry the demand voltage value. The sampled voltage is held by a hold capacitor during readout of one row and is accessed during the next row by the control circuitry as test data to drive a device under test (DUT) which may be any portion of the image sensor to be tested. Measured data out of the DUT is compared with expected data. Based on the result of the comparison, a signal indicates the pass or fail of the self-test concludes a self-test of the DUT.
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