公开(公告)号：US20160358969A1

公开(公告)日：2016-12-08

申请号：US14731707

申请日：2015-06-05

Applicant: OmniVision Technologies, Inc.

Inventor： Zhenhong Fu ,  Dajiang Yang ,  Xianmin Yi ,  Gang Chen ,  Sing-Chung Hu ,  Duli Mao

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14649

Abstract: A front-side-interconnect (FSI) red-green-blue-infrared (RGB-IR) photosensor array has photosensors of a first type with a diffused N-type region in a P-type well, the P-type well diffused into a high resistivity semiconductor layer; photosensors of a second type, with a deeper diffused N-type region in a P-type well, the P-type well; and photosensors of a third type with a diffused N-type region diffused into the high resistivity semiconductor layer underlying all of the other types of photosensors. In embodiments, photosensors of a fourth type have a diffused N-type region in a P-type well, the N-type region deeper than the N-type region of photosensors of the first and second types.

Abstract translation: 前置互连（FSI）红 - 绿 - 蓝 - 红 - 红（RGB-IR）光电传感器阵列具有在P型阱中具有扩散的N型区域的第一类型的光电传感器，P型阱扩散到 高电阻率半导体层; P型井中具有较深扩散的N型区域的第二类光电传感器，P型井; 以及具有扩散的N型区域的第三类型的光电传感器扩散到所有其它类型的光电传感器的所有高电阻率半导体层。 在实施例中，第四类型的光电传感器在P型阱中具有扩散的N型区域，N型区域比第一和第二类型的光电传感器的N型区域更深。

公开(公告)号：US09911773B2

公开(公告)日：2018-03-06

申请号：US14743385

申请日：2015-06-18

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dajiang Yang ,  Gang Chen ,  Oray Orkun Cellek ,  Zhenhong Fu ,  Chen-Wei Lu ,  Duli Mao ,  Dyson H. Tai

IPC: H01L27/146 ,  H04N5/374 ,  H04N5/355

CPC classification number: H01L27/14621 ,  H01L27/14603 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14645 ,  H04N5/35563 ,  H04N5/374

Abstract: An image sensor includes photodiodes arranged in semiconductor material. Each of the photodiodes is identically sized and is fabricated in the semiconductor material with identical semiconductor processing conditions. The photodiodes are organized into virtual large-small groupings including a first photodiode and a second photodiode. Microlenses are disposed over the semiconductor material with each of microlenses disposed over a respective photodiode. A first microlens is disposed over the first photodiode, and a second microlens is disposed over the second photodiode. A mask is disposed between the first microlens and the first photodiode. The mask includes an opening through which a first portion of incident light directed through the first microlens is directed to the first photodiode. A second portion of the incident light directed through the first microlens is blocked by the mask from reaching the first photodiode. There is no mask between the second microlens and the second photodiode.

公开(公告)号：US09865642B2

公开(公告)日：2018-01-09

申请号：US14731707

申请日：2015-06-05

Applicant: OmniVision Technologies, Inc.

Inventor： Zhenhong Fu ,  Dajiang Yang ,  Xianmin Yi ,  Gang Chen ,  Sing-Chung Hu ,  Duli Mao

IPC: H01L27/00 ,  H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14649

Abstract: A front-side-interconnect (FSI) red-green-blue-infrared (RGB-IR) photosensor array has photosensors of a first type with a diffused N-type region in a P-type well, the P-type well diffused into a high resistivity semiconductor layer; photosensors of a second type, with a deeper diffused N-type region in a P-type well, the P-type well; and photosensors of a third type with a diffused N-type region diffused into the high resistivity semiconductor layer underlying all of the other types of photosensors. In embodiments, photosensors of a fourth type have a diffused N-type region in a P-type well, the N-type region deeper than the N-type region of photosensors of the first and second types.

公开(公告)号：US20160372507A1

公开(公告)日：2016-12-22

申请号：US14743385

申请日：2015-06-18

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dajiang Yang ,  Gang Chen ,  Oray Orkun Cellek ,  Zhenhong Fu ,  Chen-Wei Lu ,  Duli Mao ,  Dyson H. Tai

IPC: H01L27/146 ,  H04N5/374 ,  H04N5/355

CPC classification number: H01L27/14621 ,  H01L27/14603 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14645 ,  H04N5/35563 ,  H04N5/374

Abstract: An image sensor includes photodiodes arranged in semiconductor material. Each of the photodiodes is identically sized and is fabricated in the semiconductor material with identical semiconductor processing conditions. The photodiodes are organized into virtual large-small groupings including a first photodiode and a second photodiode. Microlenses are disposed over the semiconductor material with each of microlenses disposed over a respective photodiode. A first microlens is disposed over the first photodiode, and a second microlens is disposed over the second photodiode. A mask is disposed between the first microlens and the first photodiode. The mask includes an opening through which a first portion of incident light directed through the first microlens is directed to the first photodiode. A second portion of the incident light directed through the first microlens is blocked by the mask from reaching the first photodiode. There is no mask between the second microlens and the second photodiode.

Abstract translation: 图像传感器包括布置在半导体材料中的光电二极管。 每个光电二极管的尺寸相同，并且在具有相同半导体加工条件的半导体材料中制造。 光电二极管被组织成包括第一光电二极管和第二光电二极管的虚拟大小组。 微透镜设置在半导体材料上，每个微透镜设置在相应的光电二极管上。 第一微透镜设置在第一光电二极管的上方，第二微透镜设置在第二光电二极管的上方。 掩模设置在第一微透镜和第一光电二极管之间。 掩模包括开口，通过第一微透镜的入射光的第一部分通过该开口被引导到第一光电二极管。 通过第一微透镜的入射光的第二部分被掩模阻挡到达第一光电二极管。 在第二微透镜和第二光电二极管之间没有掩模。

公开(公告)号：US08933494B1

公开(公告)日：2015-01-13

申请号：US14038336

申请日：2013-09-26

Applicant: Omnivision Technologies, Inc.

Inventor： Sing-Chung Hu ,  Dajiang Yang ,  Zhenhong Fu

IPC: H01L27/148

CPC classification number: H01L27/14656 ,  H01L27/14614

Abstract: A pixel cell includes a storage transistor including a deep implant storage region having a first polarity is implanted in a semiconductor substrate to store image charge accumulated by a photodiode. A transfer transistor is coupled between the photodiode and an input of the storage transistor to selectively transfer the image charge from the photodiode to the storage transistor. An output transistor is coupled to an output of the storage transistor to selectively transfer the image charge from the storage transistor to a readout node. A first shallow implant region having the first polarity is implanted in the semiconductor substrate under a first spacer region between a transfer gate of the transfer transistor and a storage gate of the storage transistor. A second shallow implant region having the first polarity is implanted in the semiconductor substrate under a second spacer region between the storage gate and the output gate.

Abstract translation: 像素单元包括存储晶体管，其包括具有第一极性的深注入存储区域注入到半导体衬底中以存储由光电二极管累积的图像电荷。 传输晶体管耦合在光电二极管和存储晶体管的输入端之间，以选择性地将图像电荷从光电二极管转移到存储晶体管。 输出晶体管耦合到存储晶体管的输出，以选择性地将图像电荷从存储晶体管传送到读出节点。 具有第一极性的第一浅注入区域在转移晶体管的转移栅极和存储晶体管的存储栅极之间的第一间隔区域内注入到半导体衬底中。 具有第一极性的第二浅注入区域在存储栅极和输出栅极之间的第二间隔区域内注入到半导体衬底中。

公开(公告)号：US08809925B2

公开(公告)日：2014-08-19

申请号：US13649842

申请日：2012-10-11

Applicant: OmniVision Technologies, Inc.

Inventor： Gang Chen ,  Hsin-Chih Tai ,  Duli Mao ,  Zhenhong Fu

IPC: H01L31/062 ,  H01L31/113

CPC classification number: H01L27/14609 ,  H01L27/14616

Abstract: An image sensor pixel includes a photosensitive element, a floating diffusion (“FD”) region, and a transfer device. The photosensitive element is disposed in a substrate layer for accumulating an image charge in response to light. The FD region is disposed in the substrate layer to receive the image charge from the photosensitive element. The transfer device is disposed between the photosensitive element and the FD region to selectively transfer the image charge from the photosensitive element to the FD region. The transfer device includes a gate, a buried channel dopant region and a surface channel region. The gate is disposed between the photosensitive element and the FD region. The buried channel dopant region is disposed adjacent to the FD region and underneath the gate. The surface channel region is disposed between the buried channel dopant region and the photosensitive element and disposed underneath the gate.

Abstract translation: 图像传感器像素包括感光元件，浮动扩散（“FD”）区域和传送装置。 感光元件设置在基板层中，用于响应于光积累图像电荷。 FD区域设置在基板层中以从感光元件接收图像电荷。 转印装置设置在感光元件和FD区之间以选择性地将图像电荷从感光元件转移到FD区域。 转移装置包括栅极，掩埋沟道掺杂区域和表面沟道区域。 栅极设置在感光元件和FD区域之间。 掩埋沟道掺杂区域与FD区域相邻并且位于栅极下方。 表面沟道区域设置在掩埋沟道掺杂区域和感光元件之间并且设置在栅极下方。

公开(公告)号：US09419044B2

公开(公告)日：2016-08-16

申请号：US14255535

申请日：2014-04-17

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dajiang Yang ,  Gang Chen ,  Zhenhong Fu ,  Duli Mao ,  Eric A. G. Webster ,  Sing-Chung Hu ,  Dyson H. Tai

IPC: H01L27/00 ,  H01J40/14 ,  H01L27/146 ,  H01L21/00 ,  H01L31/18 ,  H01L27/148

CPC classification number: H01L27/14643 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14689

Abstract: A pixel cell includes a storage transistor disposed in a semiconductor substrate. The storage transistor includes a storage gate disposed over the semiconductor substrate, and a storage gate implant that is annealed and has a gradient profile in the semiconductor substrate under the storage transistor gate to store image charge accumulated by a photodiode disposed in the semiconductor substrate. A transfer transistor is disposed in the semiconductor substrate and is coupled between the photodiode and an input of the storage transistor to selectively transfer the image charge from the photodiode to the storage transistor. The transfer transistor includes a transfer gate disposed over the semiconductor substrate. An output transistor is coupled to an output of the storage transistor to selectively transfer the image charge from the storage transistor to a read out node. The output transistor includes an output gate disposed over the semiconductor substrate.

Abstract translation: 像素单元包括设置在半导体衬底中的存储晶体管。 存储晶体管包括设置在半导体衬底上的存储栅极，以及在存储晶体管栅极下的半导体衬底中退火并具有梯度分布的存储栅极注入，以存储由设置在半导体衬底中的光电二极管累积的图像电荷。 传输晶体管设置在半导体衬底中并耦合在光电二极管和存储晶体管的输入端之间，以选择性地将图像电荷从光电二极管转移到存储晶体管。 转移晶体管包括设置在半导体衬底上的转移栅极。 输出晶体管耦合到存储晶体管的输出，以选择性地将图像电荷从存储晶体管传送到读出节点。 输出晶体管包括设置在半导体衬底上的输出门。

公开(公告)号：US20150303235A1

公开(公告)日：2015-10-22

申请号：US14255535

申请日：2014-04-17

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dajiang Yang ,  Gang Chen ,  Zhenhong Fu ,  Duli Mao ,  Eric A. G. Webster ,  Sing-Chung Hu ,  Dyson H. Tai

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14612 ,  H01L27/14614 ,  H01L27/14689

Abstract: A pixel cell includes a storage transistor disposed in a semiconductor substrate. The storage transistor includes a storage gate disposed over the semiconductor substrate, and a storage gate implant that is annealed and has a gradient profile in the semiconductor substrate under the storage transistor gate to store image charge accumulated by a photodiode disposed in the semiconductor substrate. A transfer transistor is disposed in the semiconductor substrate and is coupled between the photodiode and an input of the storage transistor to selectively transfer the image charge from the photodiode to the storage transistor. The transfer transistor includes a transfer gate disposed over the semiconductor substrate. An output transistor is coupled to an output of the storage transistor to selectively transfer the image charge from the storage transistor to a read out node. The output transistor includes an output gate disposed over the semiconductor substrate.

Abstract translation: 像素单元包括设置在半导体衬底中的存储晶体管。 存储晶体管包括设置在半导体衬底上的存储栅极，以及在存储晶体管栅极下的半导体衬底中退火并具有梯度分布的存储栅极注入，以存储由设置在半导体衬底中的光电二极管累积的图像电荷。 传输晶体管设置在半导体衬底中并耦合在光电二极管和存储晶体管的输入端之间，以选择性地将图像电荷从光电二极管转移到存储晶体管。 转移晶体管包括设置在半导体衬底上的转移栅极。 输出晶体管耦合到存储晶体管的输出，以选择性地将图像电荷从存储晶体管传送到读出节点。 输出晶体管包括设置在半导体衬底上的输出门。

公开(公告)号：US20140103410A1

公开(公告)日：2014-04-17

申请号：US13649842

申请日：2012-10-11

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Hsin-Chih Tai ,  Duli Mao ,  Zhenhong Fu

IPC: H01L27/146 ,  H01L31/18

CPC classification number: H01L27/14609 ,  H01L27/14616

Abstract: An image sensor pixel includes a photosensitive element, a floating diffusion (“FD”) region, and a transfer device. The photosensitive element is disposed in a substrate layer for accumulating an image charge in response to light. The FD region is dispose in the substrate layer to receive the image charge from the photosensitive element. The transfer device is disposed between the photosensitive element and the FD region to selectively transfer the image charge from the photosensitive element to the FD region. The transfer device includes a gate, a buried channel dopant region and a surface channel region. The gate is disposed between the photosensitive element and the FD region. The buried channel dopant region is disposed adjacent to the FD region and underneath the gate. The surface channel region is disposed between the buried channel dopant region and the photosensitive element and disposed underneath the gate.

Abstract translation: 图像传感器像素包括感光元件，浮动扩散（“FD”）区域和传送装置。 感光元件设置在基板层中，用于响应于光积累图像电荷。 FD区域设置在基板层中以从感光元件接收图像电荷。 转印装置设置在感光元件和FD区之间以选择性地将图像电荷从感光元件转移到FD区域。 转移装置包括栅极，掩埋沟道掺杂区域和表面沟道区域。 栅极设置在感光元件和FD区域之间。 掩埋沟道掺杂区域与FD区域相邻并且位于栅极下方。 表面沟道区域设置在掩埋沟道掺杂区域和感光元件之间并且设置在栅极下方。