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    Isolated global shutter pixel storage structure
    2.
    发明授权
    Isolated global shutter pixel storage structure 有权

    公开(公告)号：US10141360B2

    公开(公告)日：2018-11-27

    申请号：US15280775

    申请日：2016-09-29

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Kevin Ka Kei Leung ,  Dajiang Yang

    IPC: H01L27/146 ,  H04N5/374 ,  H04N5/378

    Abstract: An imaging system includes a pixel array of pixel cells with each one of the pixel cells including a photodiode disposed in a semiconductor material, a global shutter gate transistor, disposed in the semiconductor material and coupled to the photodiode, a storage transistor disposed in the semiconductor material, an optical isolation structure disposed in the semiconductor material to isolate a sidewall of the storage transistor from stray light and stray charge. The optical isolation structure also includes a deep trench isolation structure that is filled with tungsten and a P+ passivation formed over an interior sidewall of the deep trench optical isolation structure. Each one of the pixel cells also include control circuitry coupled to the pixel array to control operation of the pixel array and readout circuitry coupled to the pixel array to readout image data from the plurality of pixels.

    GRADED-SEMICONDUCTOR IMAGE SENSOR
    3.
    发明申请
    GRADED-SEMICONDUCTOR IMAGE SENSOR 审中-公开

    公开(公告)号：US20180145099A1

    公开(公告)日：2018-05-24

    申请号：US15874648

    申请日：2018-01-18

    Applicant: OmniVision Technologies, Inc.

    Inventor： Dajiang Yang ,  Gang Chen ,  Duli Mao ,  Dyson H. Tai

    IPC: H01L27/146 ,  H01L31/18 ,  H01L31/0392

    CPC classification number: H01L27/1461 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/14689 ,  H01L31/03921 ,  H01L31/1812

    Abstract: A method of image sensor fabrication includes growing a semiconductor material having an illuminated surface and a non-illuminated surface, where the semiconductor material includes silicon and germanium and a germanium concentration increases in a direction of the non-illuminated surface. The method further includes forming a plurality of photodiodes, including a doped region and a heavily doped region, in the semiconductor material, where the doped region is of an opposite majority charge carrier type as the heavily doped region. A plurality of isolation regions are formed and disposed between individual photodiodes in the plurality of photodiodes, where the plurality of isolation regions surround, at least in part, the individual photodiodes and electrically isolate the individual photodiodes.

    BIG-SMALL PIXEL SCHEME FOR IMAGE SENSORS
    6.
    发明申请
    BIG-SMALL PIXEL SCHEME FOR IMAGE SENSORS 有权
    用于图像传感器的大型小像素方案

    公开(公告)号：US20150123172A1

    公开(公告)日：2015-05-07

    申请号：US14070286

    申请日：2013-11-01

    Applicant: OmniVision Technologies, Inc.

    Inventor： Gang Chen ,  Duli Mao ,  Dajiang Yang ,  Zhibin Xiong ,  Dyson H. Tai

    IPC: H01L27/148

    CPC classification number: H01L27/14614 ,  H01L27/14621 ,  H01L27/14641 ,  H01L27/14645

    Abstract: An image sensor pixel for use in a high dynamic range image sensor includes a first photodiode, a plurality of photodiodes, a shared floating diffusion region, a first transfer gate, and a second transfer gate. The first photodiode is disposed in a semiconductor material. The first photodiode has a first light exposure area and a first doping concentration. The plurality of photodiodes is also disposed in the semiconductor material. Each photodiode in the plurality of photodiodes has the first light exposure area and the first doping concentration. The first transfer gate is coupled to transfer first image charge from the first photodiode to the shared floating diffusion region. The second transfer gate is coupled to transfer distributed image charge from each photodiode in the plurality of photodiodes to the shared floating diffusion region.

    Abstract translation: 用于高动态范围图像传感器的图像传感器像素包括第一光电二极管，多个光电二极管，共享浮动扩散区，第一传输门和第二传输门。 第一光电二极管设置在半导体材料中。 第一光电二极管具有第一曝光区域和第一掺杂浓度。 多个光电二极管也设置在半导体材料中。 多个光电二极管中的每个光电二极管具有第一曝光区域和第一掺杂浓度。 第一传输栅极被耦合以将第一图像电荷从第一光电二极管传递到共享浮动扩散区域。 第二传输门被耦合以将分布图像电荷从多个光电二极管中的每个光电二极管传递到共享浮动扩散区域。

    NEGATIVELY CHARGED LAYER TO REDUCE IMAGE MEMORY EFFECT
    7.
    发明申请
    NEGATIVELY CHARGED LAYER TO REDUCE IMAGE MEMORY EFFECT 审中-公开
    有意义的电荷层减少图像记忆效应

    公开(公告)号：US20140327102A1

    公开(公告)日：2014-11-06

    申请号：US14331652

    申请日：2014-07-15

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Howard E. Rhodes ,  Dajiang Yang ,  Gang Chen ,  Duli Mao ,  Vincent Venezia

    IPC: H01L31/0224 ,  H01L31/103

    CPC classification number: H01L31/0224 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14643 ,  H01L31/103

    Abstract: An image sensor pixel includes a photodiode region having a first polarity doping type disposed in a semiconductor layer. A pinning surface layer having a second polarity doping type is disposed over the photodiode region in the semiconductor layer. A first polarity charge layer is disposed proximate to the pinning surface layer over the photodiode region. A contact etch stop layer is disposed over the photodiode region proximate to the first polarity charge layer. The first polarity charge layer is disposed between the pinning surface layer and the contact etch stop layer such that first polarity charge layer cancels out charge having a second polarity that is induced in the contact etch stop layer. The first polarity charge layer is disposed between a first one of a plurality of passivation layers and a second one of the plurality of passivation layers disposed over the photodiode region.

    Abstract translation: 图像传感器像素包括设置在半导体层中的具有第一极性掺杂型的光电二极管区域。 具有第二极性掺杂型的钉扎表面层设置在半导体层中的光电二极管区域的上方。 第一极性电荷层设置在光电二极管区域附近的钉扎表面层附近。 接触蚀刻停止层设置在靠近第一极性电荷层的光电二极管区域的上方。 第一极性电荷层设置在钉扎表面层和接触蚀刻停止层之间，使得第一极性电荷层抵消在接触蚀刻停止层中感应的具有第二极性的电荷。 第一极性电荷层设置在多个钝化层中的第一个和设置在光电二极管区域上的多个钝化层中的第二钝化层之间。

    IMAGE SENSOR HAVING METAL CONTACT COUPLED THROUGH A CONTACT ETCH STOP LAYER WITH AN ISOLATION REGION
    8.
    发明申请
    IMAGE SENSOR HAVING METAL CONTACT COUPLED THROUGH A CONTACT ETCH STOP LAYER WITH AN ISOLATION REGION 有权
    具有金属接触的图像传感器通过具有隔离区域的接触蚀刻停止层

    公开(公告)号：US20140299957A1

    公开(公告)日：2014-10-09

    申请号：US13858754

    申请日：2013-04-08

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Sing-Chung Hu ,  Dajiang Yang ,  Oray Orkun Cellek ,  Hsin-Chih Tai ,  Gang Chen

    IPC: H01L27/146

    CPC classification number: H01L27/1463 ,  H01L27/14636 ,  H01L27/14643

    Abstract: An image sensor pixel includes one or more photodiodes disposed in a semiconductor layer. Pixel circuitry is disposed in the semiconductor layer coupled to the one or more photodiodes. A passivation layer is disposed proximate to the semiconductor layer over the pixel circuitry and the one or more photodiodes. A contact etch stop layer is disposed over the passivation layer. One or more metal contacts are coupled to the pixel circuitry through the contact etch stop layer. One or more isolation regions are defined in the contact etch stop layer that isolate contact etch stop layer material through which the one or more metal contacts are coupled are coupled to the pixel circuitry from the one or more photodiodes.

    Abstract translation: 图像传感器像素包括设置在半导体层中的一个或多个光电二极管。 像素电路设置在耦合到一个或多个光电二极管的半导体层中。 钝化层靠近半导体层设置在像素电路和一个或多个光电二极管的上方。 接触蚀刻停止层设置在钝化层上。 一个或多个金属触点通过接触蚀刻停止层耦合到像素电路。 在接触蚀刻停止层中限定一个或多个隔离区，其隔离接触蚀刻停止层材料，一个或多个金属接触通过该接触蚀刻停止层材料从一个或多个光电二极管耦合到像素电路。

    Methods for high-dynamic-range color imaging
    9.
    发明授权
    Methods for high-dynamic-range color imaging 有权

    公开(公告)号：US10559615B2

    公开(公告)日：2020-02-11

    申请号：US15943651

    申请日：2018-04-02

    Applicant: OmniVision Technologies, Inc.

    Inventor： Chen-Wei Lu ,  Dajiang Yang ,  Oray Orkun Cellek ,  Duli Mao

    IPC: H01L27/146 ,  H04N5/369 ,  G02B5/20

    Abstract: A method for manufacturing a high-dynamic-range color image sensor includes (a) depositing a color filter layer on a silicon substrate having a photosensitive pixel array with a plurality of first pixels and a plurality of second pixels, to form (i) a plurality of first color filters above a first subset of each of the plurality of first pixels and the plurality of second pixels and (ii) a plurality of second color filters above a second subset of each of the plurality of first pixels and the plurality of second pixels, wherein thickness of the second color filters exceeds thickness of the first color filters, and (b) depositing, on the color filter layer, a dynamic-range extending layer including grey filters above the second pixels to attenuate light propagating toward the second pixels, combined thickness of the color filter layer and the dynamic-range extending layer being uniform across the photosensitive pixel array.

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