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公开(公告)号：US10205094B2
公开(公告)日：2019-02-12
申请号：US14786835
申请日：2014-04-23
Applicant: OSAKA UNIVERSITY , PI-CRYSTAL INC.
Inventor： Junichi Takeya , Junshi Soeda
Abstract: A raw material solution (6), in which an organic semiconductor material is dissolved in a solvent, is supplied to a substrate (1). The solvent is evaporated so that crystals of the organic semiconductor material are precipitated. Thus, an organic semiconductor thin film (7) is formed on the substrate (1). An edge forming member (2) having a contact face (2a) on one side is used and located opposite the substrate (1) so that the plane of the contact face (2a) intersects the surface of the substrate (1) at a predetermined angle. The raw material solution (6) is supplied to the substrate (1) and formed into a droplet (6a) that comes into contact with the contact face (2a). The substrate (1) and the edge forming member (2) are moved relative to each other in a direction parallel to the surface of the substrate (1) so as to separate the edge forming member (2) from the droplet (6a), and while the raw material solution (6) is supplied so that a change in size of the droplet (6a) with the relative movement is maintained within a predetermined range, the solvent contained in the droplet (6a) is evaporated to form the organic semiconductor thin film (7) on the substrate (1) after the contact face (2a) has been moved. In this manner, a large-area organic semiconductor single crystal thin film having high charge mobility can be manufactured by a simple process using a solvent evaporation method based on droplet formation.
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公开(公告)号：US11974501B2
公开(公告)日：2024-04-30
申请号：US17270657
申请日：2019-08-29
Applicant: THE UNIVERSITY OF TOKYO , PI-CRYSTAL INC.
Inventor： Toshihiro Okamoto , Junichi Takeya , Masato Mitani , Yosuke Ito , Tomonori Matsumuro
IPC: H10K85/60 , C07D333/50 , H10K10/46
CPC classification number: H10K85/6576 , C07D333/50 , H10K85/6574 , H10K10/484
Abstract: Provided is a novel chalcogen-containing organic semiconductor compound having excellent carrier mobility. The compound is represented by Formula (1a) or (1b): [Chem. 1]
where in Formulas (1a) and (1b), X represents S, O, or Se, and R1 each independently represents a hydrogen atom, a halogen atom, an alkyl group, an aryl group, an aralkyl group, a pyridyl group, a furyl group, a thienyl group, or a thiazolyl group.-
公开(公告)号：US20230255038A1
公开(公告)日：2023-08-10
申请号：US18012359
申请日：2021-10-08
Applicant: The University of Tokyo , PI-CRYSTAL INC. , ORGANO-CIRCUIT INC.
Inventor： Junichi Takeya , Kazuyoshi Watanabe , Han Nozawa , Yuichi Ono
IPC: H10K10/46 , H10K77/10 , H10K71/13 , H01L23/14 , H01L23/528
CPC classification number: H10K10/46 , H10K77/111 , H10K71/13 , H01L23/14 , H01L23/5283
Abstract: Provided is a semiconductor device and a method of manufacturing the semiconductor device that is capable of improving the connection reliability between an electronic element and a substrate in a semiconductor device in which the electronic element is fixed to the substrate. The semiconductor device includes: a substrate 10 provided with wirings and wiring connection parts 12 connected to the wirings; electronic elements 20, 30, 40, and 50 electrically connected to the wiring connection parts 12 and fixed to the substrate; and a resin film 60 laminated on one surface of the substrate 10, conforming to the shapes of the electronic elements 20, 30, 40, and 50, and covering the electronic elements 20, 30, 40, and 50.
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Patent Agency Ranking
公开(公告)号：US09379341B2
公开(公告)日：2016-06-28
申请号：US14423401
申请日：2013-08-19
Applicant: OSAKA UNIVERSITY
Inventor： Junichi Takeya , Takafumi Uemura
CPC classification number: H01L51/0545 , H01L51/0021 , H01L51/0554 , H01L51/105
Abstract: An organic thin film transistor includes an insulating substrate (1), gate electrodes (2, 4), a gate insulating film (3), an organic semiconductor film (5), and a source electrode (6) and a drain electrode (7). The gate electrodes include a main gate electrode (2) that is disposed in a region opposed to a channel region between the source electrode and the drain electrode in the organic semiconductor film, and a pair of auxiliary gate electrodes (4) that are disposed in respective regions opposed to the source electrode and the drain electrode on the two sides of the main gate electrode. The main gate electrode and the auxiliary gate electrodes are electrically separated from each other. The contact resistance between the source and drain electrodes and the organic semiconductor film is controlled so as to be at a low level even when the organic thin film transistor is driven in a low voltage region, and the operation frequency can be sufficiently enhanced due to the channel length being shortened.
Abstract translation: 有机薄膜晶体管包括绝缘基板（1），栅电极（2,4），栅绝缘膜（3），有机半导体膜（5）和源电极（6）和漏电极（7） ）。 栅电极包括设置在与有机半导体膜中的源电极和漏电极之间的沟道区域相对的区域中的主栅极（2）和设置在有机半导体膜中的一对辅助栅电极（4） 在主栅电极的两侧与源电极和漏电极相对的各个区域。 主栅电极和辅助栅电极彼此电分离。 即使当有机薄膜晶体管在低电压区域被驱动时，源极和漏极和有机半导体膜之间的接触电阻也被控制在低电平，并且由于 通道长度缩短。
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公开(公告)号：US10074818B2
公开(公告)日：2018-09-11
申请号：US14906000
申请日：2014-07-09
Applicant: Toppan Forms Co., Ltd. , Osaka University , The University of Tokyo
Inventor： Takafumi Matsumoto , Junichi Takeya
CPC classification number: H01L51/055 , H01L51/0091 , H01L51/0545 , H01L51/105
Abstract: The transistor includes a gate electrode, an insulating layer, a semiconductor layer, a source electrode, and a drain electrode on a substrate, in which the gate electrode is formed by using silver β-ketocarboxylate denoted by General Formula (1) described below.
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公开(公告)号：US20160155969A1
公开(公告)日：2016-06-02
申请号：US14906000
申请日：2014-07-09
Applicant: TOPPAN FORMS CO., LTD. , OSAKA UNIVERSITY , THE UNIVERSITY OF TOKYO
Inventor： Takafumi Matsumoto , Junichi Takeya
CPC classification number: H01L51/055 , H01L51/0091 , H01L51/0545 , H01L51/105
Abstract: The transistor includes a gate electrode, an insulating layer, a semiconductor layer, a source electrode, and a drain electrode on a substrate, in which the gate electrode is formed by using silver β-ketocarboxylate denoted by General Formula (1) described below.
Abstract translation: 晶体管包括在基板上的栅电极，绝缘层，半导体层，源电极和漏电极，其中通过使用由下述通式（1）表示的银 - 酮 - 羧酸盐形成栅电极 。
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公开(公告)号：US20150188063A1
公开(公告)日：2015-07-02
申请号：US14423401
申请日：2013-08-19
Applicant: OSAKA UNIVERSITY
Inventor： Junichi Takeya , Takafumi Uemura
CPC classification number: H01L51/0545 , H01L51/0021 , H01L51/0554 , H01L51/105
Abstract: An organic thin film transistor includes an insulating substrate (1), gate electrodes (2, 4), a gate insulating film (3), an organic semiconductor film (5), and a source electrode (6) and a drain electrode (7). The gate electrodes include a main gate electrode (2) that is disposed in a region opposed to a channel region between the source electrode and the drain electrode in the organic semiconductor film, and a pair of auxiliary gate electrodes (4) that are disposed in respective regions opposed to the source electrode and the drain electrode on the two sides of the main gate electrode. The main gate electrode and the auxiliary gate electrodes are electrically separated from each other. The contact resistance between the source and drain electrodes and the organic semiconductor film is controlled so as to be at a low level even when the organic thin film transistor is driven in a low voltage region, and the operation frequency can be sufficiently enhanced due to the channel length being shortened.
Abstract translation: 有机薄膜晶体管包括绝缘基板（1），栅电极（2,4），栅绝缘膜（3），有机半导体膜（5）和源电极（6）和漏电极（7） ）。 栅电极包括设置在与有机半导体膜中的源电极和漏电极之间的沟道区域相对的区域中的主栅极（2）和设置在有机半导体膜中的一对辅助栅电极（4） 在主栅电极的两侧与源电极和漏电极相对的各个区域。 主栅电极和辅助栅电极彼此电分离。 即使当有机薄膜晶体管在低电压区域被驱动时，源极和漏极和有机半导体膜之间的接触电阻也被控制在低电平，并且由于 通道长度缩短。
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8.发明授权Organic semiconductor thin film, organic semiconductor device and organic field effect transistor 有权有机半导体薄膜，有机半导体器件和有机场效应晶体管公开(公告)号：US08927977B2
公开(公告)日：2015-01-06
申请号：US13802786
申请日：2013-03-14
Applicant: JNC Corporation , Osaka University
Inventor： Junichi Takeya , Toshihiro Okamoto , Tauto Nakanishi
IPC: H01L35/24 , C07D333/50 , H01L51/05 , H01L51/00
CPC classification number: H01L51/0074 , C09B57/00 , H01L51/0071 , H01L51/0073 , H01L51/0541 , H01L51/0545
Abstract: An organic semiconductor thin film including an organic semiconductor material that is easily synthesized, and is chemically and physically stable, and shows a high carrier mobility, an organic semiconductor device and an organic field effect transistor including the organic semiconductor thin film are provided. An organic semiconductor thin film of the invention includes a compound represented by the following formula 1: wherein, in formula (1), X is oxygen, sulfur or selenium.
Abstract translation: 提供了包含有机半导体材料的有机半导体薄膜，该有机半导体材料易于合成，化学和物理稳定，并且显示出高载流子迁移率，有机半导体器件和包括有机半导体薄膜的有机场效应晶体管。 本发明的有机半导体薄膜包括由下式1表示的化合物：其中，在式（1）中，X为氧，硫或硒。
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