摘要:
A method can be used for producing a powdery precursor material for an optoelectronic component having a first phase of the following general composition (Ca1-a-b-c-d-eZndMgeSrcBabXa)2Si5N8, wherein X is an activator that is selected from the group of the lanthanoids and wherein the following applies: 0
摘要:
A conversion element, a radiation-emitting semiconductor device and a method for producing a conversion element are disclosed. In an embodiment a conversion element includes a ceramic luminescent material and a flux material, wherein the flux material has a boiling temperature above 1500° C. and/or a melting temperature below 1500° C., and wherein the flux material has a concentration in the conversion element between at least 0.01 wt % and at most 1 wt %.
摘要:
A method can be used for producing a powdery precursor material for an optoelectronic component having a first phase of the following general composition (Ca1-a-b-c-d-eZndMgeSrcBabXa)2Si5N8, wherein X is an activator that is selected from the group of the lanthanoids and wherein the following applies: 0
摘要:
Wavelength converters including coarse particles/grains of a red nitride phosphor are disclosed. In some embodiments the red nitride phosphor is a (Ca,Sr,Ba)2Si5N8:Eu phosphor with a D50 grain size or a D50 particle size that is ≥5 microns. The red nitride phosphor may be encapsulated within an organic matrix or present in an inorganic matrix. In the latter case, the inorganic matrix may include fine grains with a D50 grain size
摘要:
A method is provided for producing a pulverulent precursor material of the general formula M1xM2y(Si,Al)12(O,N)16 or M12-zM2zSi8Al4N16 having the method steps A) producing a pulverulent mixture of starting materials, B) calcining the mixture under a protective gas atmosphere and subsequent grinding, wherein in method step A) at least one nitride with a specific surface area of greater than 2 m2/g is selected as starting material. A pulverulent precursor material and the use thereof are additionally provided.
摘要:
Wavelength converters including coarse particles/grains of a red nitride phosphor are disclosed. In some embodiments the red nitride phosphor is a (Ca,Sr,Ba)2Si5N8:Eu phosphor with a D50 grain size or a D50 particle size that is ≥5 microns. The red nitride phosphor may be encapsulated within an organic matrix or present in an inorganic matrix. In the latter case, the inorganic matrix may include fine grains with a D50 grain size
摘要:
A method can be used for producing a powdery precursor material of the following general composition I or II or III or IV: I: (CaySr1−y) AlSiN3:X1 II:(CabSraLi1−a−b) AISi (N1−cFc)3:X2 III: Z5−δAl4−2δSi8+2δN18: X3 IV: (Zi−dLid)5−δAl4−2δSi8+2δ(N1−XFX)18: X4. The method includes A) producing a powdery mixture of starting materials, wherein the starting materials comprise ions of the aforementioned compositions I and/or II and/or III and/or IV, B) annealing the mixture under a protective gas atmosphere, subsequent milling. In method step A), at least one silicon nitride having a specific area of greater than or equal to 5 m2/g and smaller than or equal to 100 m2/g is selected as starting material. The annealing in method step B) is carried out at a temperature of less than or equal to 1550° C.
摘要:
A method can be used for producing a powdery precursor material of the following general composition I or II or III or IV: I: (CaySr1-y)AlSiN3:X1 II: (CabSraLi1-a-b)AlSi(N1-cFc)3:X2 III: Z5-δAl4-2δSi8+2δN18: X3 IV: (Zi-dLid)5-δAl4-2δSi8+2δ(N1-xFx)18: X4. The method includes A) producing a powdery mixture of starting materials, wherein the starting materials comprise ions of the aforementioned compositions I and/or II and/or III and/or IV, B) annealing the mixture under a protective gas atmosphere, subsequent milling. In method step A), at least one silicon nitride having a specific area of greater than or equal to 5 m2/g and smaller than or equal to 100 m2/g is selected as starting material. The annealing in method step B) is carried out at a temperature of less than or equal to 1550° C.