RADIATION-EMITTING SEMICONDUCTOR BODY AND METHOD OF PRODUCING A SEMICONDUCTOR LAYER SEQUENCE

    公开(公告)号:US20190280159A1

    公开(公告)日:2019-09-12

    申请号:US16348662

    申请日:2017-11-22

    Abstract: A radiation-emitting semiconductor body includes a semiconductor layer sequence including an active region that generates radiation, an n-conducting semiconductor layer and a p-conducting semiconductor layer, wherein the active region is arranged between the n-conducting semiconductor layer and the p-conducting semiconductor layer and the p-conducting semiconductor layer includes a first doping region with a first dopant and a second doping region with a second dopant different from the first dopant, and the p-conducting semiconductor layer includes a further doping region doped with the first dopant and has a thickness of at most 2 nm.

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