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    OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING THE SAME
    2.
    发明申请
    OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING THE SAME 有权

    公开(公告)号：US20220069160A1

    公开(公告)日：2022-03-03

    申请号：US17415003

    申请日：2019-12-18

    申请人： OSRAM Opto Semiconductors GmbH

    发明人： Martin BEHRINGER ,  Alexander TONKIKH ,  Tansen VARGHESE

    IPC分类号： H01L33/06 ,  H01L33/00 ,  H01L33/24

    摘要： An optoelectronic semiconductor device comprises an active zone comprising sub-layers for forming a quantum well structure. Differences in energy levels of the quantum well structure are smaller in a central region of the optoelectronic semiconductor device than in an edge region of the optoelectronic semiconductor device. According to further embodiments, an optoelectronic semiconductor device comprises an active zone comprising a sub-layer which is suitable for forming a quantum well structure. In the active zone, quantum dot structures are formed in a central region of the optoelectronic semiconductor device. No quantum dot structures are formed in an edge region of the optoelectronic semiconductor device.

    Radiation Body and Method for Producing a Radiation Body
    5.
    发明申请
    Radiation Body and Method for Producing a Radiation Body 审中-公开

    公开(公告)号：US20180047873A1

    公开(公告)日：2018-02-15

    申请号：US15552470

    申请日：2016-02-17

    申请人： OSRAM Opto Semiconductors GmbH

    发明人： Philipp KREUTER ,  Tansen VARGHESE

    IPC分类号： H01L33/22 ,  H01L33/10

    CPC分类号： H01L33/22 ,  H01L33/10 ,  H01L33/44 ,  H01L2933/0083

    摘要： A radiation body and a method for producing a radiation body are disclosed. In an embodiment, the radiation body includes a basic body configured to generate or absorb electromagnetic radiation, at least one main side having a rough structure of first elevations and at least one structured radiation surface structured with a fine structure of second elevations, wherein the fine structure brings about a gradual refractive index change for the radiation between materials adjoining the structured radiation surface, wherein the first elevations comprise heights and widths in each case of at least λmax/n, wherein each second elevation tapers toward a maximum of the respective second elevation and each second elevations has a height of at least 0.6·λmax/n and a width of λmax/(2n) at most in each case, and wherein a distance between neighboring second elevations is λmax/(2n) at most.

    METHOD FOR PRODUCING SEMICONDUCTOR COMPONENTS AND SEMICONDUCTOR COMPONENT
    6.
    发明申请
    METHOD FOR PRODUCING SEMICONDUCTOR COMPONENTS AND SEMICONDUCTOR COMPONENT 审中-公开
    用于生产半导体元件和半导体元件的方法

    公开(公告)号：US20170062351A1

    公开(公告)日：2017-03-02

    申请号：US15119376

    申请日：2015-02-17

    申请人： OSRAM Opto Semiconductors GmbH

    发明人： Norwin VON MALM ,  Alexander F. PFEUFFER ,  Tansen VARGHESE ,  Philipp KREUTER

    IPC分类号： H01L23/544 ,  H01L31/0352 ,  H01L33/32 ,  H01L31/18 ,  H01L33/30 ,  H01L33/42 ,  H01L31/0224 ,  H01L33/00 ,  H01L33/06 ,  H01L31/0304

    CPC分类号： H01L23/544 ,  H01L21/76898 ,  H01L31/02245 ,  H01L31/022466 ,  H01L31/03046 ,  H01L31/03048 ,  H01L31/035236 ,  H01L31/035281 ,  H01L31/056 ,  H01L31/0693 ,  H01L31/0735 ,  H01L31/186 ,  H01L31/1892 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/30 ,  H01L33/32 ,  H01L33/382 ,  H01L33/42 ,  H01L2223/5446 ,  H01L2933/0016 ,  Y02E10/52 ,  Y02E10/544 ,  Y02P70/521

    摘要： A method for producing a plurality of semiconductor components (1) is provided, comprising the following steps: a) providing a semiconductor layer sequence (2) having a first semiconductor layer (21), a second semiconductor layer (22) and an active region (25), said active region being arranged between the first semiconductor layer and the second semiconductor layer for generating and/or receiving radiation; b) forming a first connection layer (31) on the side of the second connection layer facing away from the first semiconductor layer; c) forming a plurality of cut-outs (29) through the semiconductor layer sequence; d) forming a conducting layer (4) in the cut-outs for establishing an electrically conductive connection between the first semiconductor layer and the first connection layer; and e) separating into the plurality of semiconductor components, wherein a semiconductor body (20) having at least one of the plurality of cut-outs arises from the semiconductor layer sequence for each semiconductor component and the at least one cut-out is completely surrounded by the semiconductor body in a top view of the semiconductor body. Furthermore, a semiconductor component is provided.

    摘要翻译： 提供一种用于制造多个半导体部件（1）的方法，包括以下步骤：a）提供具有第一半导体层（21），第二半导体层（22）和有源区域（22）的半导体层序列（2） （25），所述有源区域布置在第一半导体层和第二半导体层之间，用于产生和/或接收辐射; b）在第二连接层的背离第一半导体层的一侧上形成第一连接层（31）; c）通过半导体层序列形成多个切口（29）; d）在所述切口中形成导电层（4），以在所述第一半导体层和所述第一连接层之间建立导电连接; 以及e）分离成多个半导体部件，其中具有多个切口中的至少一个的半导体本体（20）从每个半导体部件的半导体层序列产生，并且至少一个切口被完全包围 通过半导体本体在半导体本体的俯视图中。 此外，提供了半导体部件。