Patent search ap:("OSRAM Opto Semiconductors GmbH") AND inv:"Korbinian PERZLMAIER" Page 1

1.

发明申请
METHOD AND DEVICE FOR PICKING UP AND DEPOSITING OPTOELECTRONIC SEMICONDUCTOR CHIPS 有权

公开(公告)号：US20220319882A1

公开(公告)日：2022-10-06

申请号：US17627554

申请日：2020-08-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Tobias MEYER , Korbinian PERZLMAIER

IPC: H01L21/67 , B65G47/92

Abstract: A method of picking up and depositing optoelectronic semiconductor chips comprises generating electron-hole pairs in optoelectronic semiconductor chips, thereby generating a dipole electric field in the vicinity of the respective optoelectronic semiconductor chip, generating an electric field by a pick-up tool, and picking up the optoelectronic semiconductor chips during or after generation of the electron-hole pairs by the pick-up tool and depositing them at predetermined locations.

2.

发明申请
RADIATION-EMITTING SEMICONDUCTOR CHIP, METHOD FOR PRODUCING A PLURALITY OF RADIATION-EMITTING SEMICONDUCTOR CHIPS AND OPTOELECTRONIC COMPONENT HAVING A RADIATION-EMITTING SEMICONDUCTOR CHIP 审中-公开

公开(公告)号：US20180233627A1

公开(公告)日：2018-08-16

申请号：US15514814

申请日：2015-10-07

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Mathias KAEMPF , Simon JEREBIC , Ingo NEUDECKER , Guenter SPATH , Michael HUBER , Korbinian PERZLMAIER

IPC: H01L33/22 , H01L33/00

CPC classification number: H01L33/22 , H01L33/0095 , H01L33/20

Abstract: Disclosed is a radiation-emitting semi-conductor chip (1) comprising an epitaxial semi-conductor layer sequence (3) which emits electromagnetic radiation in operation. The epitaxial semi-conductor layer sequence (3) is applied on a a transparent substrate (4), wherein the substrate (4) has a first main surface (8) facing the semi-conductor layer sequence (3), a second main surface (9) facing away from the semi-conductor layer sequence (3) and a first lateral flank (10) arranged between the first main surface (8) and the second main surface (9), and the lateral flank (10) has a decoupling structure which is formed in a targeted manner from separating tracks. Also disclosed is a method for producing the semi-conductor chip, and a component comprising such a semi-conductor chip.

3.

发明申请
MULTI-CHIP CARRIER STRUCTURE 有权

公开(公告)号：US20220223756A1

公开(公告)日：2022-07-14

申请号：US17611112

申请日：2020-03-10

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alexander PFEUFFER , Korbinian PERZLMAIER , Kerstin NEVELING

IPC: H01L33/24 , H01L25/075

Abstract: A support structure for receiving planar microchips, comprising a planar support substrate and at least two receiving elements. The receiving elements are connected to the carrier substrate and configured in such a way that they detachably hold a flat microchip between the at least two receiving elements in such a way that the microchip can be moved out with a defined minimum force transversely to a support structure plane.

4.

发明申请
µ-Led, µ-Led Device, Display And Method For The Same 有权

公开(公告)号：US20220173157A1

公开(公告)日：2022-06-02

申请号：US17515337

申请日：2021-10-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Martin BEHRINGER , Andreas BIEBERSDORF , Ruth BOSS , Erwin LANG , Tobias MEYER , Alexander PFEUFFER , Marc PHILIPPENS , Julia STOLZ , Tansen VARGHESE , Sebastian WITTMANN , Siegfried HERRMANN , Berthold HAHN , Bruno JENTZSCH , Korbinian PERZLMAIER , Peter STAUSS , Petrus SUNDGREN , Jens MUELLER , Kerstin NEVELING , Frank SINGER , Christian MUELLER

IPC: H01L27/15 , H01L33/58 , H01L33/10

Abstract: The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

5.

发明申请
SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT 审中-公开

公开(公告)号：US20190051802A1

公开(公告)日：2019-02-14

申请号：US16078561

申请日：2017-02-21

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Korbinian PERZLMAIER , Christian LEIRER , Matthias SPERL

IPC: H01L33/62 , H01L25/13 , H01L33/00 , H01L33/52 , H01L33/50 , H01L33/48

Abstract: The invention relates to a semiconductor component comprising at least one semiconductor chip (10) having a semiconductor body (1) with an active region (12), a conversion element (6) and a carrier (3), the carrier (3) comprising a first moulded body (33), a first conductor body (31) and a second conductor body (32), the conductor body (31, 32) being connected to the active region (12) in an electrically conducting manner. A side of the conversion element (6) facing away from the active region (12) forms a front side (101) of the semiconductor chip (10) and a side of the carrier (3) facing away from the active region (12) forms a rear side (102) of the semiconductor chip (10), and lateral surfaces (103) of the semiconductor chip connect the front side (101) and the rear side (102) together. The semiconductor component also comprises a second moulded body (5), the semiconductor chip (10) fully penetrating the second moulded body (5) in such a way that the second moulded body (5) forms a frame around the semiconductor chip (10), and the front side (101) and the rear side (102) of the semiconductor chip (10) are free from the second moulded body (5) at least in places, and the second moulded body (5) at least partially covers free surfaces of the conversion element (6) on the lateral surfaces of the semiconductor chip (10).

6.

发明申请
OPTOELECTRONIC SEMICONDUCTOR COMPONENT, OPTOELECTRONIC ARRANGEMENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT 审中-公开

公开(公告)号：US20180145235A1

公开(公告)日：2018-05-24

申请号：US15574809

申请日：2016-05-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Korbinian PERZLMAIER , Stefanie RAMMELSBERGER , Anna KASPRZAK-ZABLOCKA , Julian IKONOMOV , Christian LEIRER

IPC: H01L33/62 , H01L31/02 , H01L31/0203 , H01L31/0232 , H01L31/18 , H01L33/48 , H01L33/60 , H01L27/15 , H01L33/00

CPC classification number: H01L33/62 , H01L24/29 , H01L27/153 , H01L31/02005 , H01L31/0203 , H01L31/02327 , H01L31/186 , H01L33/0095 , H01L33/405 , H01L33/486 , H01L33/60 , H01L2933/0066

Abstract: An optoelectronic semiconductor component comprises an optoelectronic semiconductor chip (C1) having an electrically conductive substrate (T), an active part (AT) containing epitaxially grown layers, and an intermediate layer (ZS) which is arranged between the substrate (T) and the active part (AT) and contains a solder material. The optoelectronic semiconductor component further comprises an electrical connection point, which at least partially covers an underside of the substrate (T), wherein the electrical connection point comprises a first contact layer (KS1) on a side facing the substrate (T), and the first contact layer (KS1) contains aluminium or consists of aluminium.

7.

发明申请
Optoelectronic Semiconductor Chip and Method for Producing an Optoelectronic Semiconductor Chip 有权
Title translation: 光电半导体芯片及其制造方法

公开(公告)号：US20130175564A1

公开(公告)日：2013-07-11

申请号：US13632846

申请日：2012-10-01

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Kai GEHRKE , Korbinian PERZLMAIER , Richard FLOETER , Christian SCHMID

IPC: H01L33/60

CPC classification number: H01L33/60 , H01L33/405

Abstract: In at least one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence for generating an electromagnetic radiation, and also a silver mirror. The silver mirror is arranged at the semiconductor layer sequence. Oxygen is admixed with the silver of the silver mirror. A proportion by weight of the oxygen in the silver mirror is preferably at least 10−5 and furthermore preferably at most 10%.

Abstract translation: 在至少一个实施例中，光电半导体芯片包括用于产生电磁辐射的半导体层序列，以及银镜。银镜配置在半导体层序列。氧气与银色镜子的银混合。银镜中氧的比例优选为10-5以上，进一步优选为10％以下。