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公开(公告)号：US10418355B2
公开(公告)日：2019-09-17
申请号：US15671772
申请日：2017-08-08
发明人： Rainer Butendeich , Alexander Walter , Matthias Peter , Tobias Meyer , Tetsuya Taki , Hubert Maiwald
IPC分类号： H01L27/02 , H01L33/02 , H01L31/0236 , H01L31/0304 , H01L31/0352 , H01L33/06 , H01L33/08 , H01L33/32 , H01L27/15 , H01L33/24
摘要： An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a first semiconductor layer sequence having a plurality of microdiodes, and a second semiconductor layer sequence having an active region. The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.
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公开(公告)号：US20170338217A1
公开(公告)日：2017-11-23
申请号：US15671772
申请日：2017-08-08
发明人： Rainer Butendeich , Alexander Walter , Matthias Peter , Tobias Meyer , Tetsuya Taki , Hubert Maiwald
IPC分类号： H01L27/02 , H01L31/0236 , H01L33/32 , H01L27/15 , H01L33/02 , H01L31/0352 , H01L31/0304 , H01L33/06 , H01L33/08 , H01L33/24
CPC分类号： H01L27/0248 , H01L27/15 , H01L31/02363 , H01L31/03044 , H01L31/035236 , H01L33/02 , H01L33/06 , H01L33/08 , H01L33/24 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a first semiconductor layer sequence having a plurality of microdiodes, and a second semiconductor layer sequence having an active region. The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.
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公开(公告)号：US20160020201A1
公开(公告)日：2016-01-21
申请号：US14686364
申请日：2015-04-14
发明人： Rainer Butendeich , Alexander Walter , Matthias Peter , Tobias Meyer , Tetsuya Taki , Hubert Maiwald
IPC分类号： H01L27/02 , H01L33/24 , H01L31/0304 , H01L33/08 , H01L31/0352 , H01L31/0236 , H01L33/06 , H01L33/32
CPC分类号： H01L27/0248 , H01L27/15 , H01L31/02363 , H01L31/03044 , H01L31/035236 , H01L33/02 , H01L33/06 , H01L33/08 , H01L33/24 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor chip has a first semiconductor layer sequence which comprises a multiplicity of microdiodes, and a second semiconductor layer sequence which comprises an active region. The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.
摘要翻译： 光电子半导体芯片具有包括多个微二极管的第一半导体层序列和包含有源区的第二半导体层序列。 第一半导体层序列和第二半导体层序列基于氮化物化合物半导体材料，第一半导体层序列在生长方向上位于第一半导体层序列之前，并且微二极管形成用于有源区的ESD保护。
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公开(公告)号：US09761576B2
公开(公告)日：2017-09-12
申请号：US14686364
申请日：2015-04-14
发明人： Rainer Butendeich , Alexander Walter , Matthias Peter , Tobias Meyer , Tetsuya Taki , Hubert Maiwald
IPC分类号： H01L27/02 , H01L33/02 , H01L31/0236 , H01L31/0304 , H01L31/0352 , H01L33/06 , H01L33/08 , H01L33/32 , H01L27/15 , H01L33/24
CPC分类号： H01L27/0248 , H01L27/15 , H01L31/02363 , H01L31/03044 , H01L31/035236 , H01L33/02 , H01L33/06 , H01L33/08 , H01L33/24 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor chip has a first semiconductor layer sequence which comprises a multiplicity of microdiodes, and a second semiconductor layer sequence which comprises an active region. The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.
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