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公开(公告)号：US20220085254A1
公开(公告)日：2022-03-17
申请号：US17523828
申请日：2021-11-10
发明人： Juanita Kurtin , Brian Theobald , Matthew J. Carillo , Oun-Ho Park , Georgeta Masson , Steven M. Hughes
IPC分类号： H01L33/50 , C09K11/02 , C09K11/56 , C09K11/88 , C01B19/00 , B82Y30/00 , H01L33/00 , H01L33/06 , H01L33/56
摘要： Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell and insulator coating, wherein the semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material, and an anisotropic nanocrystalline shell composed of a second, different, semiconductor material surrounding the anisotropic nanocrystalline core. The anisotropic nanocrystalline core and the anisotropic nanocrystalline shell form a quantum dot. An insulator layer encapsulates the nanocrystalline shell and anisotropic nanocrystalline core.
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公开(公告)号：US12107197B2
公开(公告)日：2024-10-01
申请号：US17523828
申请日：2021-11-10
发明人： Juanita Kurtin , Brian Theobald , Matthew J. Carillo , Oun-Ho Park , Georgeta Masson , Steven M. Hughes
IPC分类号： H01L33/50 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C01B19/00 , C09K11/02 , C09K11/56 , C09K11/88 , H01L33/00 , H01L33/06 , H01L33/56
CPC分类号： H01L33/502 , B82Y30/00 , C01B19/007 , C09K11/02 , C09K11/025 , C09K11/565 , C09K11/883 , H01L33/005 , H01L33/06 , H01L33/56 , B82Y20/00 , B82Y40/00 , C01P2002/84 , C01P2004/04 , C01P2004/10 , C01P2004/54 , C01P2004/64 , C01P2004/80 , H01L2933/0033 , H01L2933/0041 , H01L2933/005 , H01L2933/0083 , Y10S977/744 , Y10S977/774 , Y10S977/824 , Y10S977/89 , Y10S977/95
摘要： Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell and insulator coating, wherein the semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material, and an anisotropic nanocrystalline shell composed of a second, different, semiconductor material surrounding the anisotropic nanocrystalline core. The anisotropic nanocrystalline core and the anisotropic nanocrystalline shell form a quantum dot. An insulator layer encapsulates the nanocrystalline shell and anisotropic nanocrystalline core.
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公开(公告)号：US20180342652A1
公开(公告)日：2018-11-29
申请号：US16052515
申请日：2018-08-01
发明人： Juanita Kurtin , Brian Theobald , Matthew J. Carillo , Oun-Ho Park , Georgeta Masson , Steven M. Hughes
IPC分类号： H01L33/50 , C09K11/88 , B82Y30/00 , C01B19/00 , C09K11/02 , C09K11/56 , H01L33/00 , H01L33/06 , H01L33/56 , B82Y20/00 , B82Y40/00
摘要： Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell and insulator coating, wherein the semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material, and an anisotropic nanocrystalline shell composed of a second, different, semiconductor material surrounding the anisotropic nanocrystalline core. The anisotropic nanocrystalline core and the anisotropic nanocrystalline shell form a quantum dot. An insulator layer encapsulates the nanocrystalline shell and anisotropic nanocrystalline core.
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公开(公告)号：US11205741B2
公开(公告)日：2021-12-21
申请号：US16052515
申请日：2018-08-01
发明人： Juanita Kurtin , Brian Theobald , Matthew J. Carillo , Oun-Ho Park , Georgeta Masson , Steven M. Hughes
IPC分类号： H01L33/50 , C09K11/02 , C09K11/56 , C09K11/88 , C01B19/00 , B82Y30/00 , H01L33/00 , H01L33/06 , H01L33/56 , B82Y40/00 , B82Y20/00
摘要： Semiconductor structures having a nanocrystalline core and corresponding nanocrystalline shell and insulator coating, wherein the semiconductor structure includes an anisotropic nanocrystalline core composed of a first semiconductor material, and an anisotropic nanocrystalline shell composed of a second, different, semiconductor material surrounding the anisotropic nanocrystalline core. The anisotropic nanocrystalline core and the anisotropic nanocrystalline shell form a quantum dot. An insulator layer encapsulates the nanocrystalline shell and anisotropic nanocrystalline core.
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