公开(公告)号：US20180366909A1

公开(公告)日：2018-12-20

申请号：US15996562

申请日：2018-06-04

Applicant: Oclaro Japan, Inc.

Inventor： Takeshi KITATANI ,  Kaoru OKAMOTO ,  Kouji NAKAHARA

IPC: H01S5/30 ,  H01L31/105 ,  H01L31/0304 ,  H01L31/18 ,  H01S5/02 ,  H01S5/026 ,  H01S5/22 ,  H01S5/343 ,  H01S5/042

CPC classification number: H01S5/3054 ,  H01L31/03046 ,  H01L31/105 ,  H01L31/1844 ,  H01S5/0208 ,  H01S5/026 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/3432 ,  H04B10/40

Abstract: An optical semiconductor device includes an InP substrate; an active layer disposed above the InP substrate; a n-type semiconductor layer disposed below the active layer; and a p-type clad layer disposed above the active layer, wherein the p-type clad layer includes one or more p-type In1-xAlxP layers, the Al composition x of each of the one or more p-type In1-xAlxP layers is equal to or greater than a value corresponding to the doping concentration of a p-type dopant, and the absolute value of the average strain amount of the whole of the p-type clad layer is equal to or less than the absolute value of a critical strain amount obtained by Matthews' relational expression, using the entire layer thickness of the whole of the p-type clad layer as a critical layer thickness.