摘要:
An imaging system for identifying the location of the center of mass (“COM”) in an image. In one aspect, an imaging system includes a plurality of photosensitive elements arranged in a matrix. A center of mass circuit coupled to the photosensitive elements includes a resistive network and a normalization circuit including at least one bipolar transistor. The center of mass circuit identifies a center of mass location in the matrix and includes: a row circuit, where the row circuit identifies a center of mass row value in each row of the matrix and identifies a row intensity for each row; a horizontal circuit, where the horizontal circuit identifies a center of mass horizontal value; and a vertical circuit, where the vertical circuit identifies a center of mass vertical value. The horizontal and vertical center of mass values indicate the coordinates of the center of mass location for the image.
摘要:
An imaging system for identifying the location of the center of mass (“COM”) in an image. In one aspect, an imaging system includes a plurality of photosensitive elements arranged in a matrix. A center of mass circuit coupled to the photosensitive elements includes a resistive network and a normalization circuit including at least one bipolar transistor. The center of mass circuit identifies a center of mass location in the matrix and includes: a row circuit, where the row circuit identifies a center of mass row value in each row of the matrix and identifies a row intensity for each row; a horizontal circuit, where the horizontal circuit identifies a center of mass horizontal value; and a vertical circuit, where the vertical circuit identifies a center of mass vertical value. The horizontal and vertical center of mass values indicate the coordinates of the center of mass location for the image.
摘要:
An imaging system for identifying the location of the center of mass (“COM”) in an image. In one aspect, an imaging system includes a plurality of photosensitive elements arranged in a matrix. A center of mass circuit coupled to the photosensitive elements includes a resistive network and a normalization circuit including at least one bipolar transistor. The center of mass circuit identifies a center of mass location in the matrix and includes: a row circuit, where the row circuit identifies a center of mass row value in each row of the matrix and identifies a row intensity for each row; a horizontal circuit, where the horizontal circuit identifies a center of mass horizontal value; and a vertical circuit, where the vertical circuit identifies a center of mass vertical value. The horizontal and vertical center of mass values indicate the coordinates of the center of mass location for the image.
摘要:
An apparatus, system, and method for emission filter. A filter apparatus is presented. In one embodiment, the filter apparatus may be adapted for fluorescence spectroscopy. In a particular embodiment, the filter apparatus comprises a solution. The solution may include a polar protic solvent and an absorbing specimen. Additionally, the filter apparatus may include an adhesive to conform the solution into a solid filter.
摘要:
A photosensitive pixel includes a photosensor and an externally loadable flag. The photosensor outputs a signal indicative of an intensity of incident light. The externally loadable flag indicates the pixel reset state, and is preferably stored in an in-pixel memory. Pixel reset logic resets the photosensor in accordance with the reset state and an externally applied reset signal.
摘要:
Orally administrable polymer-carrying units for expanding in a stomach of a mammal to fill a space in the stomach, the polymer-carrying units including: a carrier; a plurality of polymer molecules expandable in aqueous solutions, releasably coupled to the carrier; and means for selectively decoupling the polymer molecules from the carrier so that the polymer molecules and carrier are released in the stomach, are provided.
摘要:
An image sensor includes pixels formed on a semiconductor substrate. Each pixel includes a photoactive region in the semiconductor substrate, a sense node, and a power supply node. A first electrode is disposed near a surface of the semiconductor substrate. A bias signal on the first electrode sets a potential in a region of the semiconductor substrate between the photoactive region and the sense node. A second electrode is disposed near the surface of the semiconductor substrate. A bias signal on the second electrode sets a potential in a region of the semiconductor substrate between the photoactive region and the power supply node. The image sensor includes a controller that causes bias signals to be provided to the electrodes so that photocharges generated in the photoactive region are accumulated in the photoactive region during a pixel integration period, the accumulated photocharges are transferred to the sense node during a charge transfer period, and photocharges generated in the photoactive region are transferred to the power supply node during a third period without passing through the sense node. The imager can operate at high shutter speeds with simultaneous integration of pixels in the array. High quality images can be produced free from motion artifacts. High quantum efficiency, good blooming control, low dark current, low noise and low image lag can be obtained.
摘要:
Method and apparatus for expanding the dynamic range of an optical imager, comprising individually controlling the integration time of each pixel of a sensor array, and providing a corresponding scaling factor for the electrical output of each individual pixel during the frame time. The integration time of each pixel is controlled as a function of light intensity received by each individual pixel, by resetting the pixel after a predetermined threshold for the output signal, has been reached.
摘要:
A Fourier Transform Infrared (FTIR) Spectrometer integrated in a CMOS technology on a Silicon-on-Insulator (SOI) wafer is disclosed. The present invention is fully integrated into a compact, miniaturized, low cost, CMOS fabrication compatible chip. The present invention may be operated in various infrared regions ranging from 1.1 μm to 15 μm or it can cover the full spectrum from 1.1 μm to 15 μm all at once.The CMOS-FTIR spectrometer disclosed herein has high spectral resolution, no movable parts, no lenses, is compact, not prone to damage in harsh external conditions and can be fabricated with a standard CMOS technology, allowing the mass production of FTIR spectrometers. The fully integrated CMOS-FTIR spectrometer is suitable for battery operation; any and all functionality can be integrated on a chip with standard CMOS technology. The disclosed invention for the FTIR spectrometer may also be adapted for a CMOS-Raman spectrometer.