摘要:
A method of making a thin film transistor made of a stack of an organic semiconductor layer, a gate insulating film and a gate electrode in this order on a substrate, which includes the steps of pattern coating a gate electrode material on the gate insulating film by printing; and carrying out a heat treatment to form the gate electrode resulting from drying for solidification of the pattern coated gate electrode material.
摘要:
A manufacturing method of a thin film transistor made of a stack of an organic semiconductor layer, a gate insulating film and a gate electrode in this order on a substrate, which includes the steps of pattern coating a gate electrode material on the gate insulating film by printing; and carrying out a heat treatment to form the gate electrode resulting from drying for solidification of the pattern coated gate electrode material.
摘要:
A manufacturing method of a thin film transistor made of a stack of an organic semiconductor layer, a gate insulating film and a gate electrode in this order on a substrate, which includes the steps of pattern coating a gate electrode material on the gate insulating film by printing; and carrying out a heat treatment to form the gate electrode resulting from drying for solidification of the pattern coated gate electrode material.
摘要:
A method for forming a pattern includes the step of forming an electrically conductive film by applying a liquid composition onto a first plate. The liquid composition includes an organic solvent and conductive particles surface-modified with a fatty acid or an aliphatic amine. Then, a second pattern, which is a reverse pattern of a first pattern, is formed on the first plate by pressing a second plate having a concave-convex pattern on a surface thereof on a surface of the first plate having the electrically conductive film on the surface thereof. Then, the first pattern of the electrically conductive film is transferred onto convex top faces of the second plate. Then, the second pattern is transferred onto a surface of a transfer substrate by pressing the surface of the first plate having the second pattern thereon on the surface of the transfer substrate.
摘要:
There is provided a method of forming an organic thin film, capable of forming a single-crystal organic thin film easily and rapidly while controlling a thickness and a size. After an organic solution is supplied to one surface (a solution accumulating region wide in width, and a solution constricting region narrow in width and connected thereto) of a film-formation substrate supported by a support controllable in temperature, a movable body controllable in temperature independently of the support is moved along a surface of the support while being kept in contact with the organic solution. The temperature of the support is set at a temperature positioned between a solubility curve and a super-solubility curve concerning the organic solution, and the temperature of the movable body is set at a temperature positioned on a side higher in temperature than the solubility curve.
摘要:
Disclosed herein is a semiconductor device which employs a thin-film transistor. In addition, the semiconductor device has a gate electrode, a gate insulation film, an organic semiconductor layer, a structure, a source electrode, a drain electrode, and an electrode material layer.
摘要:
The problem of the invention is to provide a resin composite electrolytic copper foil having further improved heat resistance and improved plate adhesion strength when plated after desmear treatment in the work process of an additive method. The solution is to form a roughened surface having a plurality of minute projections, a surface roughness (Rz) within a range of 1.0 μm to 3.0 μm and a lightness value of not more than 30 on one surface of an electrolytic copper foil, and form a layer of a resin composition containing a block copolymerized polyimide resin having a structure that imide oligomers of a first structural unit and a second structural unit are bonded alternately and repeatedly on the roughened surface.
摘要:
A method of forming a pattern and a method of producing an electronic element are characterized by including a first step of forming an electrically conductive film (D) by applying a liquid composition onto a first plate (10), and heating the first plate (10); a second step of forming an electrically conductive pattern (D′) on the first plate (10) by pressing a second plate (20) having a projection-and-recess pattern on a surface side thereof onto a surface side of the first plate (10), on which the electrically conductive film (D) is formed, to transfer an unwanted pattern of the electrically conductive film (D) to top faces of projections (20a) of the second plate (20), thereby removing the unwanted pattern; and a third step of transferring the electrically conductive pattern (D′) to a surface of a transfer-receiving substrate (30) by pressing the surface side of the first plate (10), on which the electrically conductive pattern (D′) is formed, onto the surface of the transfer-receiving substrate (30), wherein the liquid composition contains a solvent having a vapor pressure of 133 Pa or less at a surface temperature of the heated first plate (10). These methods provide a method of forming a pattern and a method of producing an electronic element in which a state of a liquid-composition coating film is stabilized and a fine and precise pattern can be stably formed with good reproducibility.
摘要:
In the condition where a nozzle for applying a coating liquid is disposed on the lower side of a substrate and a substrate surface controlled in wettability is faced down, the nozzle and the substrate are moved relative to each other, whereby the coating liquid is applied to a desired region of the substrate, and then the coating liquid is dried, to obtain a pattern included a dried coating layer.
摘要:
A method of forming a pattern and a method of producing an electronic element with which a fine and precise pattern is stably formed are provided. Each of the method of forming a pattern and the method of producing an electronic element includes a step of forming an electrically conductive film D by applying a liquid composition onto a first plate 10; a step of forming an electrically conductive pattern D′ on the first plate 10 by pressing a second plate 20 onto a surface side of the first plate 10, on which the electrically conductive film D is formed, to transfer an unwanted pattern of the electrically conductive film D to top faces of projections 20a of the second plate 20, thereby removing the unwanted pattern; and a step of transferring the electrically conductive pattern D′ by pressing the surface side of the first plate 10, on which the electrically conductive pattern D′ is formed, onto a surface of a transfer-receiving substrate, wherein when a surface tension of the surface of the first plate 10, onto which the liquid composition is applied, is represented by α, a dynamic surface tension of the liquid composition at 100 msec measured by a maximum bubble pressure method is represented by β, and a surface tension of the top faces of the projections 20a of the second plate 20 is represented by γ, the composition of the liquid composition or a material of the surface of the first plate 10 or the second plate 20 is set so as to satisfy γ>α≧β.