公开(公告)号：US4906964A

公开(公告)日：1990-03-06

申请号：US319108

申请日：1989-03-06

申请人： Osamu Imai ,  Ritsu Sato

发明人： Osamu Imai ,  Ritsu Sato

IPC分类号： C04B35/453 ,  H01C7/10 ,  H01C7/112

CPC分类号： H01C7/112

摘要： An improved voltage non-linear sintered resistor which includes zinc oxide, bismuth oxide and at least one metal oxide additive selected from the group consisting of antimony oxide, silicon oxide, and mixtures thereof. The sintered resistor includes at least two crystalline phases including .alpha. and .delta. crystalline phases of bismuth oxide and has a quantity ratio of .alpha./.delta. crystalline phases of bismuth oxide of about 0.1-0.8.

公开(公告)号：US5107242A

公开(公告)日：1992-04-21

申请号：US657100

申请日：1991-02-19

申请人： Osamu Imai ,  Ritsu Sato ,  Kunio Ohira

发明人： Osamu Imai ,  Ritsu Sato ,  Kunio Ohira

IPC分类号： H01C17/00 ,  H01C7/112 ,  H01C7/12

CPC分类号： H01C7/112 ,  Y10T29/49082

摘要： An excellent voltage non-linear resistor for use in a gapped lightning arrestor having a composition containing 1 0.5-1.2 mole % of bismuth oxide calculated as Bi.sub.2 O.sub.3, 2 0.3-1.5 mole % of cobalt oxide calculated as Co.sub.2 O.sub.3, 3 0.2-0.8 mole % of manganese oxide calculated as MnO.sub.2, 4 0.5-1.5 mole % of antimony oxide calculated as Sb.sub.2 O.sub.3, 5 0.1-1.5 mole % of chromium oxide calculated as Cr.sub.2 O.sub.3, 6 0.6-2.0 mole % of silicon oxide calculated as SiO.sub.2, 7 0.8-2.5 mole % of nickel oxide calculated as NiO, 8 0.004-0.04 mole % of aluminum oxide calculated as Al.sub.2 O.sub.3, 0.0001-0.05 mole % of boron oxide calculated as B.sub.2 O.sub.3 , 10.circle. 0.001-0.05 mole % of silver oxide calculated as Ag.sub.2 O, and 11.circle. the rest of zinc oxide, 12.circle. a limited current of 250-350 V/mm at a current density of 0.1 A/cm.sup.2 calculated per unit thickness of the sintered resistor, 13.circle. a limited current ratio of V.sub.0.1A /V.sub.0.1mA of 1.2-1.7 at current densities of 0.1 A/cm.sup.2 and 0.1 mA/cm.sup.2, and 14.circle. a deterioration rate of limited current of not more than 3% at a current density of 0.1 A/cm.sup.2 before and after applying twice a lightning surge current (4/10 .mu.s wave form) of 5 KA/cm.sup.2 per unit surface area.

公开(公告)号：US5277843A

公开(公告)日：1994-01-11

申请号：US826383

申请日：1992-01-27

申请人： Osamu Imai ,  Kunio Ohira ,  Ritsu Sato

发明人： Osamu Imai ,  Kunio Ohira ,  Ritsu Sato

IPC分类号： H01C7/112 ,  H01B1/00 ,  H01B1/06 ,  H01B1/08

CPC分类号： H01C7/112

摘要： A ZnO.sub.2 voltage non-linear resistor excellent in all characteristics of life under electrical stress, current impulse withstandability, discharge voltage ratio, change rate of discharge voltage after application of current impulse and moisture absorbency contains, as additive ingredients: 0.4-1.5 mol. % bismuth oxides as Bi.sub.2 O.sub.3, 0.3-1.5 mol. % cobalt oxides as Co.sub.2 O.sub.3, 0.2-1.0 mol. % manganese oxides as MnO.sub.2, 0.5-1.5 mol. % antimony oxides as Sb.sub.2 O.sub.3, 0.1-1.5 mol. % chromium oxides as Cr.sub.2 O.sub.3, 0.4-3.0 mol. % silicon oxides as SiO.sub.2, 0.5-2.5 mol. % nickel oxides as NiO, 0.001-0.05 mol. % aluminum oxides as Al.sub.2 O.sub.3, 0.0001-0.05 mol. % boron oxides as B.sub.2 O.sub.3, 0.0001-0.05 mol. % silver oxides as Ag.sub.2 O, and 0.0005-0.1 mol. % zirconium oxides as ZrO.sub.2, which bismuth oxides contain 30 wt. % of a .gamma.-type crystalline phase. A small-sizable ZnO.sub.2 voltage non-linear resistor having a higher varistor voltage in addition to the above characteristics contains, as additive ingredients: 0.3-1.5 mol. % bismuth oxides as Bi.sub.2 O.sub.3, 0.3-1.5 mol. % cobalt oxides as Co.sub.2 O.sub.3, 0.2-1.5 mol. % manganese oxides as MnO.sub.2, 0.5-1.5 mol. % antimony oxides as Sb.sub.2 O.sub.3, 0.1-1.5 mol. % chromium oxides as Cr.sub.2 O.sub.3, 4.0-10.0 mol. % silicon oxides as SiO.sub.2, 0.5-2.5 mol. % nickel oxides as NiO, 0.001-0.05 mol. % aluminum oxides as Al.sub.2 O.sub.3, 0.0001-0.05 mol. % boron oxides as B.sub.2 O.sub.3, 0.0001-0.05 mol. % silver oxides as Ag.sub.2 O, and 0.0005-0.1 mol % zirconium oxides as ZrO.sub.2, which bismuth oxides contain 30 wt. % of a crystalline .gamma.-type phase.

摘要翻译： ZnO2电压非线性电阻在电应力，电流冲击耐受性，放电电压比，施加电流冲击和吸湿性后的放电电压变化率都具有优异的寿命特性，作为添加成分：0.4-1.5mol。 铋氧化物为Bi2O3，0.3-1.5mol。 钴氧化物为Co2O3，0.2-1.0mol。 锰氧化物为MnO 2，0.5-1.5mol。 ％的氧化锑为Sb2O3，0.1〜1.5mol。 ％铬氧化物为Cr2O3，0.4-3.0mol。 ％硅氧化物为SiO 2，0.5-2.5摩尔。 镍氧化物为NiO，0.001-0.05mol。 ％氧化铝为Al2O3，0.0001-0.05mol。 ％氧化硼为B2O3，0.0001-0.05mol。 ％的氧化银作为Ag 2 O，和0.0005〜0.1mol。 ％锆氧化物作为ZrO 2，该氧化铋含有30wt。 ％的（γ）型结晶相。 除了上述特征之外，具有较高压敏电压的小尺寸ZnO 2电压非线性电阻包含作为添加成分：0.3-1.5mol。 铋氧化物为Bi2O3，0.3-1.5mol。 钴氧化物为Co2O3，0.2-1.5mol。 锰氧化物为MnO 2，0.5-1.5mol。 ％的氧化锑为Sb2O3，0.1〜1.5mol。 铬氧化物为Cr2O3，4.0-10.0mol。 ％硅氧化物为SiO 2，0.5-2.5摩尔。 镍氧化物为NiO，0.001-0.05mol。 ％氧化铝为Al2O3，0.0001-0.05mol。 ％氧化硼为B2O3，0.0001-0.05mol。 ％的氧化银作为Ag 2 O，以及0.0005〜0.1摩尔％的氧化锆作为ZrO 2，该氧化铋含有30重量％ ％的结晶（γ）型相。

公开(公告)号：US5269971A

公开(公告)日：1993-12-14

申请号：US921327

申请日：1992-07-29

申请人： Osamu Imai ,  Ritsu Sato

发明人： Osamu Imai ,  Ritsu Sato

IPC分类号： H01C7/112 ,  C04B35/00 ,  H01C8/00

CPC分类号： H01C7/112

摘要： A voltage non-linear resistor element mainly including ZnO, substantially free from internal defects, exhibiting an excellent current impulse withstand capability, can be manufactured by a process wherein an SiC inclusion in the starting ZnO powder is restricted to at most 10 ppm, preferably at most 0.1 ppm, by weight, whereby formation of closed pores in the element is prevented, which is otherwise caused by decomposition of considerable amount of SiC during firing. The starting ZnO powder has an average particle diameter (R) of 0.1-2.0 .mu.m, preferably 0.3-0.8 .mu.m, a particle size distribution within the range of between 0.5R and 2R, of at least 70%, preferably 80%, by weight, needle-like crystals of at most 20%, preferably at most 10%, by weight, and an SiC content as an impurity of at most 10 ppm, preferably at most 0.1 ppm, by weight.

摘要翻译： 主要包含ZnO的电压非线性电阻元件，其基本上没有内部缺陷，表现出优异的电流冲击耐受能力，可以通过其中起始ZnO粉末中的SiC夹杂物限制在至多10ppm，优选在 最大为0.1ppm（重量），从而防止元件中闭孔的形成，否则由焙烧期间大量的SiC分解引起。 起始ZnO粉末的平均粒径（R）为0.1〜2.0μm，优选为0.3〜0.8μm，粒径分布在0.5R〜2R之间，为70％以上，优选为80％ ，优选为20重量％以下，优选为10重量％以下的针状结晶，作为杂质的SiC含量为10重量ppm以下，优选为0.1重量ppm以下。

公开(公告)号：US5250281A

公开(公告)日：1993-10-05

申请号：US796367

申请日：1991-11-22

申请人： Osamu Imai ,  Ritsu Sato

发明人： Osamu Imai ,  Ritsu Sato

IPC分类号： H01C7/112 ,  C01G9/02 ,  C01G9/03

CPC分类号： H01C7/112

摘要： A voltage non-linear resistor element mainly comprising ZnO, substantially free from internal defects, exhibiting an excellent current impulse withstand capability, can be manufactured by a process wherein an SiC inclusion in the starting ZnO powder is restricted to at most 10 ppm, preferably at most 0.1 ppm, by weight, whereby formation of closed pores in the element is prevented, which is otherwise caused by decomposition of considerable amount of SiC during firing. The starting ZnO powder has an average particle diameter (R) of 0.1-2.0 .mu.m, preferably 0.3-0.8 .mu.m, a particle size distribution within the range of between 0.5R and 2R, of at least 70%, preferably 80%, by weight, needle-like crystals of at most 20%, preferably at most 10%, by weight, and an SiC content as an impurity of at most 10 ppm, preferably at most 0.1 ppm, by weight.

摘要翻译： 主要包含ZnO的电压非线性电阻元件，其基本上不含内部缺陷，表现出优异的电流冲击耐受能力，可以通过其中起始ZnO粉末中的SiC夹杂物限制在至多10ppm，优选在 最大为0.1ppm（重量），从而防止元件中闭孔的形成，否则由焙烧期间大量的SiC分解引起。 起始ZnO粉末的平均粒径（R）为0.1〜2.0μm，优选为0.3〜0.8μm，粒径分布在0.5R〜2R之间，为70％以上，优选为80％ ，优选为20重量％以下，优选为10重量％以下的针状结晶，作为杂质的SiC含量为10重量ppm以下，优选为0.1重量ppm以下。

公开(公告)号：US5248452A

公开(公告)日：1993-09-28

申请号：US551151

申请日：1990-07-11

申请人： Osamu Imai ,  Ritsu Sato

发明人： Osamu Imai ,  Ritsu Sato

IPC分类号： H01C7/112

CPC分类号： H01C7/112

摘要： A voltage non-linear resistor element mainly including ZnO, substantially free from internal defects, exhibiting an excellent current impulse withstand capability, can be manufactured by a process wherein an SiC inclusion in the starting ZnO powder is restricted to at most 10 ppm, preferably at most 0.1 ppm, by weight, whereby formation of closed pores in the element is prevented, which is otherwise caused by decomposition of considerable amount of SiC during firing. The starting ZnO powder has an average particle diameter (R) of 0.1-2.0 .mu.m, preferably 0.3-0.8 .mu.m, a particle size distribution within the range of between 0.5R and 2R, of at least 70%, preferably 80%, by weight, needle-like crystals of at most 20%, preferably at most 10%, by weight, and an SiC content as an impurity of at most 10 ppm, preferably at most 0.1 ppm, by weight.

公开(公告)号：US5039971A

公开(公告)日：1991-08-13

申请号：US389301

申请日：1989-08-03

申请人： Osamu Imai ,  Ritsu Sato

发明人： Osamu Imai ,  Ritsu Sato

IPC分类号： H01C7/112

CPC分类号： H01C7/112

摘要： A voltage non-linear resistor, composed mainly of zinc oxide and contains at least bismuth oxide, antimony oxide, and silicon oxide as additives, wherein crystalline phases of bismuth oxide includes at least two kinds of .beta. and .delta. satisfying the following inequalities: ##EQU1## in which .beta. and .delta. are contents of the .beta. type crystalline phase and the .delta. type crystalline phase, respectively. A voltage non-linear resistor is also provided, wherein bismuth oxide further includes an .alpha. type crystalline phase, and .alpha., .beta. and .delta. satisfy the following inequalities: ##EQU2## in which .alpha. is a content of the .alpha. type crystalline phase. A voltage non-linear resistor is further provided, wherein the resistor contains at least .delta. type crystalline phase of bismuth oxide and an amorphous phase containing bismuth, and a content of bismuth in each of the phases satisfies the following inequalities:0.10.ltoreq.B/A.ltoreq.0.40 (1)0.05.ltoreq.C/A.ltoreq.0.30 (2)in which A, B and C are the total content of bismuth in a sintered body of the resistor, the content of bismuth in the .delta. type crystalline phase of Bi.sub.2 O.sub.3, and the content of bismuth in the bismuth-containing amorphous phase, respectively.

公开(公告)号：US06599603B1

公开(公告)日：2003-07-29

申请号：US09673955

申请日：2000-10-24

申请人： Masahiro Kato ,  Masaro Tamatsuka ,  Osamu Imai ,  Akihiro Kimura ,  Tomosuke Yoshida

发明人： Masahiro Kato ,  Masaro Tamatsuka ,  Osamu Imai ,  Akihiro Kimura ,  Tomosuke Yoshida

IPC分类号： C30B2906

CPC分类号： C30B29/06 ,  C30B15/00 ,  H01L21/3225 ,  Y10T428/21

摘要： The present invention provides a CZ silicon wafer, wherein the wafer includes rod-like void defects and/or plate-like void defects inside thereof, and a CZ silicon wafer, wherein the silicon wafer includes void defects inside the wafer, a maximum value of a ratio between long side length L1 and short side length L2 (L1/L2) in an optional rectangle circumscribed the void defect image projected on an optional {110} plane is 2.5 or more, and the silicon wafer including rod-like void defects and/or plate-like void defects inside the wafer, wherein a void defect density of the silicon wafer at a depth of from the wafer surface to at least 0.5 &mgr;m after the heat treatment is ½ or less than that of inside the wafer. According to this, the silicon wafer, which is suitable for expanding reducing effect of void defects by heat treatment up to a deeper region, can be obtained.

摘要翻译： 本发明提供了一种CZ硅晶片，其中晶片在其内部包括棒状空隙缺陷和/或板状空隙缺陷，以及CZ硅晶片，其中硅晶片包括晶片内的空隙，其最大值 在可选择的{110}平面上投影的空隙缺陷图像的任意矩形中的长边长L1和短边长L2之间的比率（L1 / L2）为2.5以上，硅晶片包括棒状空隙， /或晶片内的板状空隙缺陷，其中在晶片表面的深度处的硅晶片的空隙缺陷密度在热处理之后至少为0.5微米的半孔缺陷密度为晶片内部的1/2以下。 据此，可以获得适合于通过热处理直到更深的区域来减少空隙缺陷的效果的硅晶片。

公开(公告)号：US4933659A

公开(公告)日：1990-06-12

申请号：US362282

申请日：1989-06-06

申请人： Osamu Imai ,  Koichi Umemoto

发明人： Osamu Imai ,  Koichi Umemoto

IPC分类号： C04B35/453 ,  H01C7/10 ,  H01C7/102 ,  H01C7/112

CPC分类号： H01C7/102 ,  H01C7/112 ,  Y10T29/49099

摘要： A voltage non-linear resistor having lightning discharge current withstanding capability, switching surge current withstanding capability, and voltage non-linear index .alpha., including a resistor element body consisting essentially of zinc oxide, and a side highly resistive layer composed of a zinc silicate phase consisting essentially of Zn.sub.2 SiO.sub.4 and a spinel phase consisting essentially of Zn.sub.7 Sb.sub.2 O.sub.12 arranged on a side surface of the resistor element body, can be attained, having a porosity of the resistor element body of 2% or less, zinc silicate particles existing continuously in the side highly resistive layer, and a porosity of 10% or less in a region of the side highly resistive layer within 30 .mu.m or less from the resistor element body. A method of producing the voltage non-linear resistor is also provided.

公开(公告)号：US20080200522A1

公开(公告)日：2008-08-21

申请号：US12105779

申请日：2008-04-18

申请人： Masayuki Morita ,  Osamu Imai

发明人： Masayuki Morita ,  Osamu Imai

IPC分类号： A01N43/40 ,  A01N37/18 ,  A01N37/00 ,  A01P15/00

CPC分类号： A01N3/00 ,  A01N35/10 ,  A01N43/40 ,  A01N47/34 ,  A01N53/00 ,  A01N37/38 ,  A01N2300/00

摘要： The present invention provides a composition for controlling a house insect pest, such as termites, ants or cockroaches, which comprises, as active ingredients, at least two compounds selected from the group consisting of (a) a certain pyridine compound, (b) a benzoylurea compound, (c) a pyrethroid compound and (d) a certain hydrazone compound; and a composition for controlling a house insect pest, which comprises, as an active ingredient, a certain hydrazone compound.

摘要翻译： 本发明提供了一种用于防治诸如白蚁，蚂蚁或蟑螂的房屋虫害害虫的组合物，其包含选自以下的至少两种化合物作为活性成分：（a）某种吡啶化合物，（b） 苯甲酰脲化合物，（c）拟除虫菊酯化合物和（d）某种腙化合物; 以及用于控制家蝇害虫的组合物，其包含某种腙化合物作为活性成分。