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公开(公告)号：US4655597A
公开(公告)日：1987-04-07
申请号：US739013
申请日：1985-05-29
摘要： A micro-displacement measuring apparatus using a semiconductor laser, comprises a compound resonator system containing the semiconductor laser, and a light detector receiving the light from the semiconductor laser, and with the compound resonator system being constructed such that light from said laser irradiates an object to be measured and the reflected light therefrom returns to the semiconductor laser. The light detector detects and measures the number of fluctuations and the level of the optical output of the laser to determine the displacement of the object and of the direction of the displacement of the object, respectively.
摘要翻译： 使用半导体激光器的微位移测量装置包括包含半导体激光器的复合谐振器系统和接收来自半导体激光器的光的光检测器，并且复合谐振器系统被构造成使得来自所述激光的光照射物体 并且其反射的光返回到半导体激光器。 光检测器检测并测量激光的光学输出的波动数量和电平，以分别确定物体的位移和物体的位移方向。
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2.发明授权Apparatus for measuring reflectivities of resonator facets of semiconductor laser 失效用于测量半导体激光器谐振器面的反射率的装置
公开(公告)号：US4660983A
公开(公告)日：1987-04-28
申请号：US777247
申请日：1985-09-18
CPC分类号： H01S5/14 , G01N21/55 , H01S3/106 , H01S5/0014 , H01S5/028 , H01S5/0283 , H01S5/0683
摘要： An apparatus for measuring the reflectivities of the resonator facets of a semiconductor laser when the facets are covered with a protective coating of dielectric material or the like, which comprises photodetector means for individually measuring the laser light powers from both facets of the resonator, reflector means for reflecting the laser light from one of the facets back to the laser, shutter means openable or closable at a position to block the laser light reflected from the reflector means, and photodetector means for measuring the power of the reflected laser light.
摘要翻译： 一种用于测量半导体激光器的谐振器面的反射率的装置，其中所述小面被介电材料等的保护涂层覆盖，所述保护涂层包括光电检测器装置，用于分别测量来自谐振器的两个面的激光功率，反射器装置 用于将激光从其中一个面反射回激光器，快门装置在阻挡从反射器装置反射的激光的位置处可开启或关闭;以及光电检测器装置，用于测量反射的激光的功率。
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公开(公告)号：US4806778A
公开(公告)日：1989-02-21
申请号：US832885
申请日：1986-02-26
CPC分类号： G01D5/26
摘要： A micro-displacement measuring apparatus using a semiconductor laser, comprises a compound resonator system containing the semiconductor laser, and a light detector receiving a light from said semiconductor laser. The compound resonator system is constructed such that a light from the semiconductor laser irradiates an object to be measured and the reflected light therefrom returns to the semiconductor laser, wherein the relationship between the reflectivity R.sub.f at the front facet of the semiconductor laser from which a laser light irradiates the object, and the reflectivity Rr at the rear facet of the semiconductor laser which is opposite the front facet is as follows: 0.1
摘要翻译： 使用半导体激光器的微位移测量装置包括包含半导体激光器的复合谐振器系统和接收来自所述半导体激光器的光的光检测器。 复合谐振器系统被构造成使得来自半导体激光器的光照射被测量物体并且其反射光返回到半导体激光器，其中激光器的半导体激光器的前面的反射率Rf之间的关系 光照射物体，与前面相反的半导体激光器的后面的反射率Rr如下：0.1
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公开(公告)号：US4997747A
公开(公告)日：1991-03-05
申请号：US253811
申请日：1988-10-05
CPC分类号： H01S5/12 , G02B5/1857 , G02B5/32 , G02B6/124 , H01S5/124 , Y10S359/90
摘要： A method for the formation of a diffraction grating on a substrate using a holographic technique and an etching technique, wherein the periodicity of the pattern of the diffraction grating can be changed at will by a change of the light-path length of one of the two light fluxes from a holographic exposing system.
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公开(公告)号：US4908831A
公开(公告)日：1990-03-13
申请号：US314363
申请日：1989-02-22
CPC分类号： H01S5/24 , H01S5/227 , H01S5/0035 , H01S5/2235 , H01S5/2237 , H01S5/2275
摘要： A buried type semiconductor laser device comprising a multi-layered epitaxial growth crystal including a striped laser-oscillation operating area on a semiconductor substrate, wherein said laser-oscillation operating area contains a buffer layer having the same polarity as said substrate, an active layer and a cladding layer having a polarity different from that of said substrate, said laser-oscillation operation area being sandwiched between one part of the burying layer and another part of the burying layer, which are disposed on said substrate and which have a polarity different from that of said substrate, through said substrate or a diffusion region having an impurity with the same polarity as said substrate so as to electrically isolate said burying layer from said cladding layer, thereby maintaining ineffective current flowing from said cladding layer to said burying layer at a low level even when current injected into said device is increased.
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公开(公告)号：US4901328A
公开(公告)日：1990-02-13
申请号：US380745
申请日：1989-07-17
CPC分类号： H01S5/24 , H01S5/028 , H01S5/1039 , H01S5/20
摘要： A V-channeled substrate inner strip (VSIS) semiconductor laser includes a p-Ga.sub.1-31 y Al.sub.y As active layer sandwiched between a P-Ga.sub.1-x Al.sub.x As first cladding layer and an n-Ga.sub.1-x Al.sub.x As second cladding layer. The AlAs mole fraction x of the first and second cladding layers is selected between about 0.45 and 0.52 in order to minimize the mode competition noise at an operating temperature. In a preferred form, the cavity length is longer than 300 .mu.m so as to minimize the occurrence of the mode competition noise at the operating temperature. Furthermore, the reflectivity R.sub.1 of the front facet and the reflectivity R.sub.2 of the rear facet are selected to satisfy the condition 0.1.ltoreq.ln(1/R.sub.1 .multidot.R.sub.2).ltoreq.1.
摘要翻译： V沟道衬底内条（VSIS）半导体激光器包括夹在P-Ga1-xAlxAs第一包层和n-Ga1-xAlxAs第二覆层之间的p-Ga1-31 yAlyAs有源层。 第一和第二包覆层的AlAs摩尔分数x在约0.45和0.52之间选择，以便使工作温度下的模式竞争噪声最小化。 在优选的形式中，空腔长度大于300μm，以便在工作温度下最小化模式竞争噪声的发生。 此外，选择前面的反射率R1和后面的反射率R2以满足条件0.1
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公开(公告)号：US4745616A
公开(公告)日：1988-05-17
申请号：US830864
申请日：1986-02-19
CPC分类号： H01S5/12
摘要： A semiconductor laser device comprising a GaAlAs first cladding layer, a Ga.sub.1-x Al.sub.x As (0.ltoreq.x.ltoreq.0.4) active layer for laser oscillation, an In.sub.1-y Ga.sub.y P.sub.1-z As.sub.z (z=2.04y-1.04, and 0.ltoreq.z.ltoreq.1) optical guiding layer with a diffraction grating thereon, a GaAlAs buffer layer disposed between said active layer and said optical guiding layer, and a GaAlAs second cladding layer, the width of the forbidden band of said buffer layer being greater than that of the active layer and smaller than that of the optical guiding layer.
摘要翻译： 包括GaAlAs第一包层，用于激光振荡的Ga1-xAlxAs（0≤x≤0.4）有源层，In1-yGayP1-zAsz（z = 2.04y-1.04和0）的半导体激光器件， = z 1）具有衍射光栅的光导层，设置在所述有源层和所述光导层之间的GaAlAs缓冲层和GaAlAs第二包层，所述缓冲层的禁带的宽度更大 比活性层的厚度小，而且比光导层的面积小。
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公开(公告)号：US4745615A
公开(公告)日：1988-05-17
申请号：US789787
申请日：1985-10-21
CPC分类号： H01S5/32308 , H01S5/12 , H01S5/3211
摘要： A semiconductor laser device for laser oscillation at a wavelength in the range of from 660 nm to 890 nm which includes an active layer of Ga.sub.1-x Al.sub.x As (0.ltoreq.x.ltoreq.0.4) or In.sub.1-y Ga.sub.y P.sub.1-z As.sub.z (0.51.ltoreq.y.ltoreq.1, 0.ltoreq.z.ltoreq.1, and z=2.04y-1.04) and a layer with a diffraction grating thereon of In.sub.1-y Ga.sub.y P.sub.1-z As (z=2.04y-1.04) which is adjacent to the active layer.
摘要翻译： 用于在660nm至890nm范围内的波长的激光振荡的半导体激光器件，其包括Ga1-xAlxAs（0≤x≤0.4）或In1-yGayP1-zAsz有效层（0.51 < = y 1 = 0,0 / z = 1，z = 2.04y-1.04）和其上具有In1-yGayP1-zAs（z = 2.04y-1.04）的衍射光栅的层，其相邻 到活动层。
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公开(公告)号：US4806454A
公开(公告)日：1989-02-21
申请号：US65145
申请日：1987-06-24
CPC分类号： H01S5/12 , G02B5/1857 , G02B5/32 , G02B6/124 , H01S5/124 , Y10S359/90
摘要： A method for the formation of a diffraction grating on a substrate using a holographic technique and an etching technique, wherein the periodicity of the pattern of the diffraction grating can be changed at will by a change of the light-path length of one of the two light fluxes from a holographic exposing system.
摘要翻译： 一种使用全息技术和蚀刻技术在基板上形成衍射光栅的方法，其中衍射光栅的图案的周期可以随意地通过两个中的一个的光路长度的变化而改变 来自全息曝光系统的光通量。
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公开(公告)号：US4803690A
公开(公告)日：1989-02-07
申请号：US839869
申请日：1986-03-13
CPC分类号： H01S5/12 , H01S5/1215
摘要： A semiconductor laser comprising a triple-layered structure composed of an active layer for laser oscillation and a pair of optical guiding layers sandwiching said active layer therebetween, wherein the refractive index of each of said optical guiding layers is smaller than that of said active layer, and the bandgap of each of said optical guiding layers is greater than that of said active layer, and moreover diffraction gratings with different pitches are positioned on the outer side of each of said optical guiding layers.
摘要翻译： 一种半导体激光器，包括由用于激光振荡的有源层组成的三层结构和夹在其间的所述有源层的一对光导层，其中每个所述光导层的折射率小于所述有源层的折射率， 并且每个所述光导层的带隙大于所述有源层的带隙，此外，具有不同间距的衍射光栅位于每个所述光导层的外侧。
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