Film forming apparatus
    4.
    发明授权
    Film forming apparatus 失效
    成膜装置

    公开(公告)号:US4858558A

    公开(公告)日:1989-08-22

    申请号:US146712

    申请日:1988-01-21

    IPC分类号: C23C16/44 C30B25/12

    CPC分类号: C23C16/44 C30B25/12

    摘要: A film forming apparatus comprises a reaction furnace having a reaction chamber therein, injection nozzles for introducing a reactive fluid, provided on the reaction furnace, a discharge nozzle for discharging a reactive fluid, provided on the reaction furnace, and a pair of susceptors located in almost vertical position in the reaction chamber and having facing sides separated by a specified distance. The susceptors include a plurality of depressions formed in the respective facing sides thereof for holding a plurality of silicon wafers. The paired susceptors are rotated in mutually opposite directions.

    Apparatus for forming thin films
    5.
    发明授权
    Apparatus for forming thin films 失效
    用于形成薄膜的装置

    公开(公告)号:US4848272A

    公开(公告)日:1989-07-18

    申请号:US162064

    申请日:1988-02-29

    摘要: An apparatus for forming epitaxial layers, comprises a first susceptor disposed in a reaction furnace and having an outer periphery constituted by a heat reflection material and capable of supporting a plurality of semiconductor wafers, a second susceptor disposed coaxially with the first susceptor such as to surround the first susceptor at a predetermined space therefrom and having an inner periphery constituted by a heat reflection material and capable of supporting a plurality of semiconductor wafers such that these semiconductor wafers face the semiconductor wafers supported by the first susceptor, and a pair of heat reflection members disposed in the reaction furnace between the outer periphery of the first susceptor and the inner periphery of the second susceptor. The first and second susceptors are rotated in mutually opposite directions about a common vertical axis during an epitaxial growing process.

    摘要翻译: 一种用于形成外延层的装置,包括:第一基座,设置在反应炉中,具有由热反射材料构成的外周,并且能够支撑多个半导体晶片;与第一基座同轴设置的第二基座, 所述第一基座处于预定的空间,并且具有由热反射材料构成的内周,并且能够支撑多个半导体晶片,使得这些半导体晶片面对由第一基座支撑的半导体晶片,以及一对热反射构件 设置在第一基座的外周和第二基座的内周之间的反应炉中。 在外延生长过程期间,第一和第二感受器在相互垂直的轴线上以相互相反的方向旋转。