公开(公告)号：US4848272A

公开(公告)日：1989-07-18

申请号：US162064

申请日：1988-02-29

申请人： Masanori Ohmura ,  Hiroshi Sakama ,  Kenji Araki ,  Hiroshi Kamio ,  Yoshinobu Shima

发明人： Masanori Ohmura ,  Hiroshi Sakama ,  Kenji Araki ,  Hiroshi Kamio ,  Yoshinobu Shima

IPC分类号： H01L21/205 ,  C23C16/458 ,  C30B25/10 ,  C30B25/12

CPC分类号： C30B25/12 ,  C23C16/4588 ,  C30B25/10

摘要： An apparatus for forming epitaxial layers, comprises a first susceptor disposed in a reaction furnace and having an outer periphery constituted by a heat reflection material and capable of supporting a plurality of semiconductor wafers, a second susceptor disposed coaxially with the first susceptor such as to surround the first susceptor at a predetermined space therefrom and having an inner periphery constituted by a heat reflection material and capable of supporting a plurality of semiconductor wafers such that these semiconductor wafers face the semiconductor wafers supported by the first susceptor, and a pair of heat reflection members disposed in the reaction furnace between the outer periphery of the first susceptor and the inner periphery of the second susceptor. The first and second susceptors are rotated in mutually opposite directions about a common vertical axis during an epitaxial growing process.

摘要翻译： 一种用于形成外延层的装置，包括：第一基座，设置在反应炉中，具有由热反射材料构成的外周，并且能够支撑多个半导体晶片;与第一基座同轴设置的第二基座， 所述第一基座处于预定的空间，并且具有由热反射材料构成的内周，并且能够支撑多个半导体晶片，使得这些半导体晶片面对由第一基座支撑的半导体晶片，以及一对热反射构件 设置在第一基座的外周和第二基座的内周之间的反应炉中。 在外延生长过程期间，第一和第二感受器在相互垂直的轴线上以相互相反的方向旋转。

公开(公告)号：US4957712A

公开(公告)日：1990-09-18

申请号：US457322

申请日：1989-12-27

申请人： Yoshinobu Shima ,  Masanori Ohmura ,  Akira Ohtani ,  Kenji Araki

发明人： Yoshinobu Shima ,  Masanori Ohmura ,  Akira Ohtani ,  Kenji Araki

IPC分类号： C30B15/00 ,  C30B15/12 ,  C30B29/06 ,  H01L21/208

CPC分类号： C30B15/12 ,  Y10S117/90 ,  Y10T117/1052

摘要： An apparatus for manufacturing a single silicon crystal comprises a quartz crucible accomodated into a graphite crucible, a partition member partitioning molten silicon material in the quartz crucible into a single silicon growing portion on the inner side and a material melting portion on the outer side, a heater for maintaining the molten silicon material in the single silicon growing portion at a temperature appropriate for growing the single silicon crystal and for supplying heat for melting the raw materials fed into the material melting portion, and small holes made in the partition member. The partition member is made of an opaque quartz glass. The material melting portion is replenished with the raw materials and single silicon crystal is pulled from the single silicon growing portion. Molton silicon material moves from the material melting portion into the single silicon growing portion through small holes made in the partition member.

公开(公告)号：US4858558A

公开(公告)日：1989-08-22

申请号：US146712

申请日：1988-01-21

申请人： Masanori Ohmura ,  Hiroshi Sakama ,  Kenji Araki

发明人： Masanori Ohmura ,  Hiroshi Sakama ,  Kenji Araki

IPC分类号： C23C16/44 ,  C30B25/12

CPC分类号： C23C16/44 ,  C30B25/12

摘要： A film forming apparatus comprises a reaction furnace having a reaction chamber therein, injection nozzles for introducing a reactive fluid, provided on the reaction furnace, a discharge nozzle for discharging a reactive fluid, provided on the reaction furnace, and a pair of susceptors located in almost vertical position in the reaction chamber and having facing sides separated by a specified distance. The susceptors include a plurality of depressions formed in the respective facing sides thereof for holding a plurality of silicon wafers. The paired susceptors are rotated in mutually opposite directions.

公开(公告)号：US5087429A

公开(公告)日：1992-02-11

申请号：US343833

申请日：1989-04-26

申请人： Hiroshi Kamio ,  Kenji Araki ,  Yoshinobu Shima ,  Makoto Suzuki ,  Akira Kazama ,  Shigetake Horie ,  Yasumitsu Nakahama

发明人： Hiroshi Kamio ,  Kenji Araki ,  Yoshinobu Shima ,  Makoto Suzuki ,  Akira Kazama ,  Shigetake Horie ,  Yasumitsu Nakahama

IPC分类号： C30B15/00 ,  C30B15/02 ,  C30B15/12 ,  C30B15/14

CPC分类号： C30B29/06 ,  C30B15/02 ,  C30B15/12 ,  C30B15/14 ,  Y10S117/912 ,  Y10T117/1052 ,  Y10T117/1056 ,  Y10T117/1068

摘要： The present invention relates to a method and apparatus for manufacturing silicon single crystals by the Czochralski method, including the steps of dividing a crucible containing molten silicon into an inner single crystal growing section and an outer material feeding section to allow said molten silicon to move slowly, and pulling a silicon single crystal from said single crystal growing section while continuously feeding silicon starting material to said material feeding section, the improvement wherein temperatures of said material feeding section and said molten silicon are maintained higher than a melting point of silicon by at least more than 12.degree. C.

公开(公告)号：US5312600A

公开(公告)日：1994-05-17

申请号：US50732

申请日：1993-04-20

申请人： Hiroshi Kamio ,  Kenji Araki ,  Yoshinobu Shima ,  Makoto Suzuki ,  Takeshi Kaneto ,  Yasumitsu Nakahama ,  Takeshi Suzuki ,  Akio Fujibayashi

发明人： Hiroshi Kamio ,  Kenji Araki ,  Yoshinobu Shima ,  Makoto Suzuki ,  Takeshi Kaneto ,  Yasumitsu Nakahama ,  Takeshi Suzuki ,  Akio Fujibayashi

IPC分类号： C30B15/14 ,  C30B15/30

CPC分类号： C30B15/14 ,  Y10S117/90 ,  Y10T117/1052 ,  Y10T117/1068

摘要： An apparatus for making a silicon single crystal large in diameter dependently on the Czochralski process, wherein appropriate openings (11) are provided on the warmth keeping over (10) so as to prevent an undesirable influence caused by atmospheric gas. The major elements of the apparatus are that the sum of areas of the openings (11) is larger than the area of gap (18) formed between the lower end of the warmth keeping cover (10) and the level of silicon solution, and that the warmth keeping cover and the heat insulating member (12) are composed of sheet metal.

摘要翻译： 用于制造直径大的硅单晶的装置取决于切克劳斯基法，其中在保持（10）的温度上提供适当的开口（11），以防止由气氛气体引起的不期望的影响。 设备的主要元件是开口（11）的面积之和大于在保温盖（10）的下端和硅溶液层之间形成的间隙（18）的面积，而且 保温盖和绝热构件（12）由金属板构成。

公开(公告)号：US5126114A

公开(公告)日：1992-06-30

申请号：US460563

申请日：1990-01-03

申请人： Hiroshi Kamio ,  Kenji Araki ,  Yoshinobu Shima ,  Makoto Suzuki ,  Akira Kazama ,  Shigetake Horie ,  Yasumitsu Nakahama

发明人： Hiroshi Kamio ,  Kenji Araki ,  Yoshinobu Shima ,  Makoto Suzuki ,  Akira Kazama ,  Shigetake Horie ,  Yasumitsu Nakahama

IPC分类号： H01L21/18 ,  C30B15/02 ,  C30B15/12 ,  C30B15/14 ,  H01L21/208

CPC分类号： C30B15/02 ,  C30B15/14 ,  Y10S117/90 ,  Y10T117/1052

摘要： According to the present invention, the inside of a crucible in which a molten raw material is placed is partitioned off with a partition ring so that a pulled single crystal is surrounded and the molten raw material may be moved and granular silicon is supplied to the outside of the partition ring, thereby to form the whole surface of outside molten liquid as a granular silicon soluble region so as to maintain the molten liquid surface on the inside of the partition ring at almost a constant level, and also to set the temperature of the molten liquid on the outside of the partition ring higher than the temperature of the inside thereof at least by 10.degree. C. or higher by covering the partition ring and the molten liquid surface on the outside thereof with a heat keeping board.

摘要翻译： 根据本发明，其中放置熔融原料的坩埚的内部用分隔环分隔开，使得拉出的单晶被包围，并且可以移动熔融的原料，并将颗粒状硅供应到外部 从而形成作为粒状硅溶解区域的外部熔融液体的整个表面，以将分隔环内部的熔融液面维持在几乎恒定的水平，并且还将 通过用隔热板覆盖分隔环和其外部的熔融液体表面，将分隔环外侧的熔融液体的内部的温度高于10℃以上。

公开(公告)号：US5087321A

公开(公告)日：1992-02-11

申请号：US460581

申请日：1990-01-03

申请人： Hiroshi Kamio ,  Kenji Araki ,  Yoshinobu Shima ,  Makoto Suzuki ,  Akira Kazama ,  Shigetake Horie

发明人： Hiroshi Kamio ,  Kenji Araki ,  Yoshinobu Shima ,  Makoto Suzuki ,  Akira Kazama ,  Shigetake Horie

IPC分类号： H01L21/18 ,  C30B15/02 ,  C30B15/12 ,  C30B15/14 ,  H01L21/208

CPC分类号： C30B15/02 ,  C30B15/14 ,  Y10S117/90 ,  Y10T117/1052

摘要： Method for manufacturing a large columner silicon single crystal having a diameter of 12 cm-30 cm by pulling up a crystal, growing, and rotating it in one direction, from molten silicon material in a quartz crucible rotating in the other direction. The inside of the quartz crucible is divided into two sections--the peripheral section for feeding and melting raw materials and the central section for growing and pulling the crystal--by means of a cylindrical partition. The material feeding and melting section and the partition are sufficiently covered by an insulating board to reduce radiant energy heat loss and to keep the temperature at least above the freezing point of the molten materials in order to prevent the molten materials from solidifying at or around the inner wall of the cylindrical partition.

公开(公告)号：US5139750A

公开(公告)日：1992-08-18

申请号：US690920

申请日：1991-06-14

申请人： Yoshinobu Shima ,  Kenji Araki ,  Hiroshi Kamio ,  Makoto Suzuki

发明人： Yoshinobu Shima ,  Kenji Araki ,  Hiroshi Kamio ,  Makoto Suzuki

IPC分类号： C30B15/14

CPC分类号： C30B15/14 ,  Y10T117/1052 ,  Y10T117/1068

摘要： A silicon single crystal manufacturing apparatus which pulls a large-diameter silicon single crystal with improved yield and efficiency according to the rotary CZ method.As a means of preventing the solidification of molten silicon in the vicinity of a partition member, that is, one of factors which deteriorate the yield and efficiency, a heat shielding member having a predetermined position and shielding width is arranged to face a meniscus position of molten silicon thereby shielding the heat radiation from the meniscus portion.Its shape is a cylindrical shape, truncated-cone shape or a shape formed at its cylindrical bottom with a flange having a central opening.Its material primarily consists of a metal such as molybdenum or tantalum or an electric resistance heater.

公开(公告)号：US5284631A

公开(公告)日：1994-02-08

申请号：US2126

申请日：1993-01-07

申请人： Takeshi Kaneto ,  Akio Fujibayashi ,  Yoshinobu Shima ,  Kenji Araki

发明人： Takeshi Kaneto ,  Akio Fujibayashi ,  Yoshinobu Shima ,  Kenji Araki

IPC分类号： C30B15/12 ,  C30B35/00

CPC分类号： C30B15/12 ,  Y10S117/90 ,  Y10T117/1052

摘要： A crucible including a cylindrical partition member arranged concentrically therein for use in a silicon single crystal growing apparatus. The bottom of the crucible located on the inner side of the partition member has a thickness which is not less than 1.3 times and not greater than 4 times the thickness of the partition member and it also has a porosity which is between 0 and 0.2% in its inner layer and between 0.2 and 15% in its outer layer as compared with the porosity of the partition member which is 0.2% or less. By virtue of the foregoing, a D.F. ratio (ratio of dislocation free) of 80% or over can be expected.

摘要翻译： 一种坩埚，其包括用于硅单晶生长装置的同心配置的圆筒形分隔构件。 位于分隔构件内侧的坩埚的底部的厚度为分隔构件的厚度的1.3倍以上且4倍以下，其孔隙率为0〜0.2％ 其内层与外隔层的0.2〜15％相比，分隔构件的孔隙率为0.2％以下。 根据上述，D.F. 80％以上的比例（无位错率）可以预期。

公开(公告)号：US5143704A

公开(公告)日：1992-09-01

申请号：US722259

申请日：1991-06-27

申请人： Yasumitsu Nakaham ,  Kenji Araki ,  Hiroshi Kamio

发明人： Yasumitsu Nakaham ,  Kenji Araki ,  Hiroshi Kamio

IPC分类号： C30B15/12 ,  C30B15/14

CPC分类号： C30B15/14 ,  C30B15/12 ,  Y10S117/90 ,  Y10T117/1052 ,  Y10T117/1068

摘要： In a silicon single crystal manufacturing apparatus of the type which continuously feeds starting material, a metallic heat keeping plate is arranged to cover a partition member dividing molten silicon into a single crystal growing section and a material melting section within a quartz crucible and an upper side of the material melting section. The metallic heat keeping plate is provided for the purpose of preventing the occurrence of solidification of the molten silicon on the inner side of the partition member and preventing excessive cooling of a silicon single crystal. The metallic heat keeping plate has a thickness of 3 mm or less and its material is tantalum or molybdenum. Further, the heat keeping plate includes a straight body portion formed with a plurality of openings for adjusting the temperature of the single crystal.

摘要翻译： 在连续供给原料的硅单晶制造装置中，金属保温板被配置为覆盖将熔融硅分割成单晶生长部分的分隔构件和石英坩埚内的材料熔化部分和上侧 的材料熔化部分。 金属保温板是为了防止在分隔件的内侧发生熔融硅的凝固而防止硅单晶的过度冷却。 金属保温板的厚度为3mm以下，其材料为钽或钼。 此外，保温板包括形成有用于调节单晶温度的多个开口的直体部。