ELECTRON LENS AND THE ELECTRON BEAM DEVICE
    1.
    发明申请
    ELECTRON LENS AND THE ELECTRON BEAM DEVICE 审中-公开
    电子镜头和电子束装置

    公开(公告)号:US20140252245A1

    公开(公告)日:2014-09-11

    申请号:US14271940

    申请日:2014-05-07

    Inventor: Hiroshi Yasuda

    Abstract: There provided a device for effectively drawing a fine pattern using a permanent magnet. The device has an outer cylinder 201 composed of a cylindrical ferromagnet with a Z axis as a central axis, a cylindrical permanent magnet 202 located inside the outer cylinder and polarized along the Z axis direction, a correction coil 204 located inside the cylindrical permanent magnet with a gap from the cylindrical permanent magnet, for adjusting a magnetic field strength generated by the cylindrical permanent magnet along the Z axis direction, and a coolant passage 203 located in the gap between the cylindrical permanent magnet and the correction coil, for allowing a coolant to flow therethrough and controlling temperature changes in the cylindrical permanent magnet.

    Abstract translation: 提供了一种用于使用永磁体有效地绘制精细图案的装置。 该装置具有由Z轴作为中心轴的圆柱形铁磁体构成的外筒201,位于外筒内部并沿着Z轴方向极化的圆柱形永磁体202,位于筒状永久磁铁内部的校正线圈204, 用于调整由圆柱形永磁体沿Z轴方向产生的磁场强度的圆柱形永磁体的间隙和位于圆柱形永磁体和校正线圈之间的间隙中的冷却剂通道203,用于允许冷却剂 流过其中并控制圆筒形永磁体的温度变化。

    Electron beam lithography device and lithographic method
    2.
    发明授权
    Electron beam lithography device and lithographic method 有权
    电子束光刻设备和光刻法

    公开(公告)号:US08878143B2

    公开(公告)日:2014-11-04

    申请号:US14349390

    申请日:2012-09-27

    Inventor: Hiroshi Yasuda

    Abstract: A high-accuracy and high-speed lithographic pattern is acquired by forming a square lattice matrix beam group with an interval which is an integral multiple of a beam size in a two-dimensional plane, switching on and off the mesh of a device to be drawn by a bitmap signal, forming a desired beam shape, deflecting the beam to a necessary position, and radiating a beam with a whole blanker being opened after the beam state is stabilized. On and off signals and a vector scan signal of each beam are provided, and the whole blanker is released after the beam is stabilized, and thus high-accuracy and high-speed lithography is performed with a small amount of data. When the total number of shots exceeds a constant value, the pattern data are modified and high-speed lithography is achieved. A semiconductor reversed bias p-n junction technique is preferably used for an individual blanker electrode.

    Abstract translation: 通过以二维平面中的光束尺寸的整数倍的间隔形成方形的格子矩阵光束组来获取高精度和高速的光刻图案,将设备的网格打开和关闭为 通过位图信号绘制,形成期望的波束形状,将波束偏转到必要位置,并且在波束状态稳定之后,使整个消隐器辐射的光束被打开。 提供每个光束的开和关信号和矢量扫描信号,并且在光束稳定之后整个消隐器被释放,因此用少量数据执行高精度和高速光刻。 当总拍摄张数超过常数值时,图案数据被修改并实现高速光刻。 半导体反向偏压p-n结技术优选用于单个消隐电极。

    Electron gun device
    3.
    发明授权

    公开(公告)号:US11295925B2

    公开(公告)日:2022-04-05

    申请号:US17434833

    申请日:2020-07-13

    Abstract: An electron gun device according to the present invention emits an electron beam by means of heating to a high temperature in a vacuum. According to the present invention, the surface of a material (108, 125), which emits an electron beam, is a hydrogenated metal that is melted and in a liquid state during a high-temperature operation; the liquid hydrogenated metal is contained in a hollow cover tube container (102, 124), which is in a solid state during the high-temperature operation, in the form of a hydrogenated liquid metal or in the form of a liquid metal before hydrogenation, and heated together with the cover tube container (102, 124) to a high temperature; subsequently, the hydrogenated liquid metal is exposed from the cover tube container (102, 124) and forms a liquid surface where gravity, the electric field and the surface tension of the liquid surface are balanced; and an electron beam is emitted from the exposed surface of the hydrogenated liquid metal.

    Tubular permanent magnet used in a multi-electron beam device
    4.
    发明授权
    Tubular permanent magnet used in a multi-electron beam device 有权
    管状永久磁铁用于多电子束装置

    公开(公告)号:US09418815B2

    公开(公告)日:2016-08-16

    申请号:US14271940

    申请日:2014-05-07

    Inventor: Hiroshi Yasuda

    Abstract: There provided a device for effectively drawing a fine pattern using a permanent magnet. The device has an outer cylinder 201 composed of a cylindrical ferromagnet with a Z axis as a central axis, a cylindrical permanent magnet 202 located inside the outer cylinder and polarized along the Z axis direction, a correction coil 204 located inside the cylindrical permanent magnet with a gap from the cylindrical permanent magnet, for adjusting a magnetic field strength generated by the cylindrical permanent magnet along the Z axis direction, and a coolant passage 203 located in the gap between the cylindrical permanent magnet and the correction coil, for allowing a coolant to flow therethrough and controlling temperature changes in the cylindrical permanent magnet.

    Abstract translation: 提供了一种用于使用永磁体有效地绘制精细图案的装置。 该装置具有由Z轴作为中心轴的圆柱形铁磁体构成的外筒201,位于外筒内部并沿着Z轴方向极化的圆柱形永磁体202,位于筒状永久磁铁内部的校正线圈204, 用于调整由圆柱形永磁体沿Z轴方向产生的磁场强度的圆柱形永磁体的间隙和位于圆柱形永磁体和校正线圈之间的间隙中的冷却剂通道203,用于允许冷却剂 流过其中并控制圆筒形永磁体的温度变化。

    ELECTRON BEAM LITHOGRAPHY DEVICE AND LITHOGRAPHIC METHOD
    5.
    发明申请
    ELECTRON BEAM LITHOGRAPHY DEVICE AND LITHOGRAPHIC METHOD 有权
    电子束光刻设备和光刻方法

    公开(公告)号:US20140231668A1

    公开(公告)日:2014-08-21

    申请号:US14349390

    申请日:2012-09-27

    Inventor: Hiroshi Yasuda

    Abstract: A high-accuracy and high-speed lithographic pattern is acquired by forming a square lattice matrix beam group with an interval which is an integral multiple of a beam size in a two-dimensional plane, switching on and off the mesh of a device to be drawn by a bitmap signal, forming a desired beam shape, deflecting the beam to a necessary position, and radiating a beam with a whole blanker being opened after the beam state is stabilized. On and off signals and a vector scan signal of each beam are provided, and the whole blanker is released after the beam is stabilized, and thus high-accuracy and high-speed lithography is performed with a small amount of data. When the total number of shots exceeds a constant value, the pattern data are modified and high-speed lithography is achieved. A semiconductor reversed bias p-n junction technique is preferably used for an individual blanker electrode.

    Abstract translation: 通过以二维平面中的光束尺寸的整数倍的间隔形成方形的格子矩阵光束组来获取高精度和高速的光刻图案,将设备的网格打开和关闭为 通过位图信号绘制,形成期望的波束形状,将波束偏转到必要位置,并且在波束状态稳定之后,使整个消隐器辐射的光束被打开。 提供每个光束的开和关信号和矢量扫描信号,并且在光束稳定之后整个消隐器被释放,因此用少量数据执行高精度和高速光刻。 当总拍摄张数超过常数值时,图案数据被修改并实现高速光刻。 半导体反向偏压p-n结技术优选用于单个消隐电极。

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