公开(公告)号：US3631310A

公开(公告)日：1971-12-28

申请号：US3631310D

申请日：1967-12-05

Applicant: PHILIPS CORP

Inventor： DAS MUKUNDA BEHARI

IPC: H01L21/22 ,  H01L29/00 ,  H01L29/10 ,  H01L29/76 ,  H01L29/78 ,  H01L7/14 ,  H01L11/00

CPC classification number: H01L29/1045 ,  H01L21/22 ,  H01L29/00 ,  H01L29/76 ,  H01L29/78

Abstract: An insulated gate field effect transistor having in the channel region extending from the source to the drain, at least to the depth of the source, a laterally decreasing concentration of substrate-type impurities, with the result that the resistivity of the channel region decreases as the source is approached. An advantage is that the source and drain may be closely spaced while avoiding punchthrough at the usual drain source voltage.

公开(公告)号：US3653978A

公开(公告)日：1972-04-04

申请号：US3653978D

申请日：1969-03-07

Applicant: PHILIPS CORP

Inventor： ROBINSON DAVID PHYTHIAN ,  BEALE JULIAN ROBERT ANTHONY ,  SHANNON JOHN MARTIN ,  KERR JOHN ANTHONY ,  DAS MUKUNDA BEHARI

IPC: H01L21/265 ,  H01L21/76 ,  H01L21/8236 ,  H01L21/8238 ,  H01L27/088 ,  H01L27/092 ,  H01L29/00 ,  H01L29/10 ,  H01L29/78 ,  H01L7/54

CPC classification number: H01L29/7838 ,  H01L21/26513 ,  H01L21/823807 ,  H01L27/0883 ,  H01L27/0925 ,  H01L29/00 ,  H01L29/1045 ,  Y10S148/053 ,  Y10S148/118 ,  Y10S148/145

Abstract: A method for making an IGFET is described. The method utilizes impurity ion implantation into the surface channel to determine the conductivity thereof. The advantages include special impurity profiles providing improved performance, better control over important parameters such as threshold voltage, the manufacture of improved tetrodes, and the manufacture of improved ICs using for example N- and P-channel devices, and depletion and enhancement devices combined in a single chip.

Abstract translation: 描述了制造IGFET的方法。 该方法利用杂质离子注入表面通道来确定其电导率。 这些优点包括提供改进性能的特殊杂质分布，更好地控制诸如阈值电压，改进的四极杆的制造以及使用例如N和P沟道器件的改进的IC的制造，以及组合的耗尽和增强器件 单芯片

公开(公告)号：US3586930A

公开(公告)日：1971-06-22

申请号：US3586930D

申请日：1969-03-10

Applicant: PHILIPS CORP

Inventor： DAS MUKUNDA BEHARI ,  JOSEPHY RICHARD DOWNING

IPC: H01L23/29 ,  H01L29/00 ,  H01L11/14

CPC classification number: H01L23/29 ,  H01L29/00 ,  H01L2924/0002 ,  H01L2924/00

Abstract: This invention relates to insulated field effect transistors, particularly to insulated gate field effect transistors, suitable for high frequency, high power operation, in which the source and drain regions each comprise a base part and a plurality of finger parts extending therefrom, the source finger parts being interdigitated with the drain finger parts and the current carrying channel region being situated at surface region parts between adjacent source finger parts and drain finger parts, the gate electrode comprising a metal layer pattern having a plurality of limb portions situated above said surface region parts and extending substantially parallel to the longitudinal direction of the source and drain finger parts.