公开(公告)号：US12136632B2

公开(公告)日：2024-11-05

申请号：US18231585

申请日：2023-08-08

Applicant: PRAGMATIC PRINTING LTD.

Inventor： Richard Price ,  Catherine Ramsdale ,  Brian Hardy Cobb ,  Feras Alkhalil

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/027 ,  H01L21/285 ,  H01L21/306 ,  H01L21/3213 ,  H01L29/40 ,  H01L29/417

Abstract: A structure is disclosed, comprising: a first field effect transistor, FET, comprising a first source terminal, a first drain terminal, a first layer or body of semiconductive material arranged to provide a first semiconductive channel connecting the first source terminal to the first drain terminal, and a gate terminal arranged with respect to the first semiconductive channel such that a conductivity of the first semiconductive channel may be controlled by application of a voltage to the gate terminal; and a second FET comprising a second source terminal, a second drain terminal, a second layer or body of semiconductive material arranged to provide a second semiconductive channel connecting the second source terminal to the second drain terminal, and the gate terminal, the second conductive channel being arranged with respect to the gate terminal such that a conductivity of the second channel may be controlled by application of a voltage to the gate terminal. Methods of manufacturing such structures are also disclosed.

公开(公告)号：US11978744B2

公开(公告)日：2024-05-07

申请号：US17315463

申请日：2021-05-10

Applicant: PRAGMATIC PRINTING LTD.

Inventor： Richard Price ,  Catherine Ramsdale ,  Brian Hardy Cobb ,  Feras Alkhalil

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/027 ,  H01L21/285 ,  H01L21/306 ,  H01L21/3213 ,  H01L29/40 ,  H01L29/417

CPC classification number: H01L27/1251 ,  H01L21/02266 ,  H01L21/02631 ,  H01L21/0274 ,  H01L21/2855 ,  H01L21/30604 ,  H01L21/32133 ,  H01L27/1262 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/401 ,  H01L29/41733

Abstract: A structure is disclosed, comprising: a first field effect transistor, FET, comprising a first source terminal, a first drain terminal, a first layer or body of semiconductive material arranged to provide a first semiconductive channel connecting the first source terminal to the first drain terminal, and a gate terminal arranged with respect to the first semiconductive channel such that a conductivity of the first semiconductive channel may be controlled by application of a voltage to the gate terminal; and a second FET comprising a second source terminal, a second drain terminal, a second layer or body of semiconductive material arranged to provide a second semiconductive channel connecting the second source terminal to the second drain terminal, and the gate terminal, the second conductive channel being arranged with respect to the gate terminal such that a conductivity of the second channel may be controlled by application of a voltage to the gate terminal. Methods of manufacturing such structures are also disclosed.

公开(公告)号：US11637210B2

公开(公告)日：2023-04-25

申请号：US16771400

申请日：2018-12-11

Applicant: PRAGMATIC PRINTING LTD

Inventor： Feras Alkhalil ,  Richard Price ,  Brian Cobb

IPC: H01L29/872 ,  H01L27/06 ,  H01L29/417 ,  H01L29/47 ,  H01L29/66 ,  H01L29/786 ,  H01L51/05 ,  H01L29/16 ,  H01L29/20 ,  H01L29/22 ,  H01L29/24

Abstract: A Schottky diode comprises: a first electrode; a second electrode; and a body of semiconductive material connected to the first electrode at a first interface and connected to the second electrode at a second interface, wherein the first interface comprises a first planar region lying in a first plane and the first electrode has a first projection onto the first plane in a first direction normal to the first plane, the second interface comprises a second planar region lying in a second plane and the second electrode has a second projection onto the first plane in said first direction, at least a portion of the second projection lies outside the first projection, said second planar region is offset from the first planar region in said first direction, and one of the first interface and the second interface provides a Schottky contact.

公开(公告)号：US11004875B2

公开(公告)日：2021-05-11

申请号：US16497636

申请日：2018-03-27

Applicant: PRAGMATIC PRINTING LTD.

Inventor： Richard Price ,  Catherine Ramsdale ,  Brian Hardy Cobb ,  Feras Alkhalil

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/027 ,  H01L21/285 ,  H01L21/306 ,  H01L21/3213 ,  H01L29/40 ,  H01L29/417

Abstract: A structure is disclosed, comprising: a first field effect transistor, FET, comprising a first source terminal, a first drain terminal, a first layer or body of semiconductive material arranged to provide a first semiconductive channel connecting the first source terminal to the first drain terminal, and a gate terminal arranged with respect to the first semiconductive channel such that a conductivity of the first semiconductive channel may be controlled by application of a voltage to the gate terminal; and a second FET comprising a second source terminal, a second drain terminal, a second layer or body of semiconductive material arranged to provide a second semiconductive channel connecting the second source terminal to the second drain terminal, and the gate terminal, the second conductive channel being arranged with respect to the gate terminal such that a conductivity of the second channel may be controlled by application of a voltage to the gate terminal. Methods of manufacturing such structures are also disclosed.