公开(公告)号：US11776791B2

公开(公告)日：2023-10-03

申请号：US16886543

申请日：2020-05-28

Applicant: PSK INC.

Inventor： Jong Chan Lee ,  Geon Jong Kim ,  Kwang Sung Yoo ,  Seok June Yun

IPC: H01J37/32 ,  H01L21/687 ,  H05H1/46

CPC classification number: H01J37/32385 ,  H01J37/32449 ,  H01J37/32541 ,  H01L21/687 ,  H05H1/46

Abstract: A substrate processing apparatus are provided. The substrate processing apparatus allows a supply flow rate per unit time for process gas supplied to the central area of a substrate to be greater than a supply flow rate per unit time for process gas supplied to an edge area of the substrate, when processing the edge area of the substrate supported by the chuck.

公开(公告)号：US20210134567A1

公开(公告)日：2021-05-06

申请号：US16701197

申请日：2019-12-03

Applicant: PSK INC.

Inventor： Kwang Sung Yoo ,  Jung Hyun Kang ,  Seong Hun Kang

IPC: H01J37/32

Abstract: An apparatus for treating a substrate includes a housing having a process space inside and having an exhaust hole formed through the housing, a support unit that supports the substrate in the process space, and an exhaust unit that is provided at the bottom of the housing and that exhausts the process space. The exhaust unit includes a body having a buffer space inside and having a through-hole formed through the body, the buffer space connecting to the process space, and an exhaust pipe that discharges gas in the buffer space. The support unit includes a support plate that supports the substrate in the process space and a support shaft connected with the support plate and inserted into the through-hole and the exhaust hole, the support shaft having a smaller diameter than the through-hole.