公开(公告)号：US11776791B2

公开(公告)日：2023-10-03

申请号：US16886543

申请日：2020-05-28

Applicant: PSK INC.

Inventor： Jong Chan Lee ,  Geon Jong Kim ,  Kwang Sung Yoo ,  Seok June Yun

IPC: H01J37/32 ,  H01L21/687 ,  H05H1/46

CPC classification number: H01J37/32385 ,  H01J37/32449 ,  H01J37/32541 ,  H01L21/687 ,  H05H1/46

Abstract: A substrate processing apparatus are provided. The substrate processing apparatus allows a supply flow rate per unit time for process gas supplied to the central area of a substrate to be greater than a supply flow rate per unit time for process gas supplied to an edge area of the substrate, when processing the edge area of the substrate supported by the chuck.