公开(公告)号：US11776791B2

公开(公告)日：2023-10-03

申请号：US16886543

申请日：2020-05-28

Applicant: PSK INC.

Inventor： Jong Chan Lee ,  Geon Jong Kim ,  Kwang Sung Yoo ,  Seok June Yun

IPC: H01J37/32 ,  H01L21/687 ,  H05H1/46

CPC classification number: H01J37/32385 ,  H01J37/32449 ,  H01J37/32541 ,  H01L21/687 ,  H05H1/46

Abstract: A substrate processing apparatus are provided. The substrate processing apparatus allows a supply flow rate per unit time for process gas supplied to the central area of a substrate to be greater than a supply flow rate per unit time for process gas supplied to an edge area of the substrate, when processing the edge area of the substrate supported by the chuck.

公开(公告)号：US11295933B2

公开(公告)日：2022-04-05

申请号：US16886479

申请日：2020-05-28

Applicant: PSK INC.

Inventor： Geon Jong Kim ,  Tae Hwan Youn ,  Jong Chan Lee

IPC: H01J37/32 ,  C23C16/458 ,  H01L21/687 ,  H01L21/67

Abstract: An apparatus for processing a substrate is provided. The apparatus for processing the substrate includes a housing having a process space, a gas supply unit to supply gas into the process space, a support unit including a chuck to support the substrate in the process space and a lower electrode to surround the chuck when viewed from a top, a temperature adjusting plate provided in the housing, a dielectric plate unit coupled to the temperature adjusting plate, and having a dielectric plate disposed in opposite to the substrate supported by the support unit in the process space, and an upper electrode unit coupled to the temperature adjusting plate, and having an upper electrode disposed in opposition to the lower electrode. The dielectric plate unit includes a first base disposed between the dielectric plate and the temperature adjusting plate.