公开(公告)号：US20180209065A1

公开(公告)日：2018-07-26

申请号：US15745954

申请日：2016-07-21

申请人： Panasonic Corporation

发明人： Ryosuke KIKUCHI ,  Toru NAKAMURA ,  Kazuhito HATO ,  Tetsuya HASEGAWA ,  Yasushi HIROSE

IPC分类号： C30B29/38 ,  C01B21/082 ,  C30B25/06 ,  H01L31/032 ,  H01L31/036 ,  H01L31/18 ,  H01L21/02

CPC分类号： C30B29/38 ,  B01J23/20 ,  B01J27/24 ,  B01J37/348 ,  C01B21/0821 ,  C01P2002/72 ,  C01P2002/77 ,  C01P2006/40 ,  C23C14/0036 ,  C23C14/0676 ,  C30B25/06 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02521 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02631 ,  H01L31/032 ,  H01L31/036 ,  H01L31/18

摘要： The present disclosure provides an anatase-type niobium oxynitride having an anatase-type crystal structure and represented by the chemical formula NbON. The present disclosure also provides a semiconductor structure (100) including: a substrate (110) having at least one principal surface composed of a perovskite-type compound having a perovskite-type crystal structure; and a niobium oxynitride (for example, an anatase-type niobium oxynitride film (120)) grown on the one principal surface of the substrate (110), the niobium oxynitride having an anatase-type crystal structure and being represented by the chemical formula NbON.

公开(公告)号：US20180209066A1

公开(公告)日：2018-07-26

申请号：US15745957

申请日：2016-07-21

申请人： Panasonic Corporation

发明人： Ryosuke KIKUCHI ,  Kazuhito HATO ,  Tetsuya HASEGAWA ,  Yasushi HIROSE

IPC分类号： C30B29/38 ,  C01B21/082 ,  C30B25/10 ,  H01L21/02 ,  H01L31/032 ,  H01L31/036 ,  H01L31/18

CPC分类号： C30B29/38 ,  C01B21/0821 ,  C01P2002/72 ,  C01P2002/76 ,  C01P2002/77 ,  C01P2002/84 ,  C01P2006/40 ,  C23C14/0021 ,  C23C14/024 ,  C23C14/0676 ,  C23C14/28 ,  C30B25/06 ,  C30B25/105 ,  C30B25/18 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02433 ,  H01L21/02521 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02631 ,  H01L31/032 ,  H01L31/036 ,  H01L31/18

摘要： The present disclosure provides a rutile-type niobium oxynitride having a rutile-type crystal structure and represented by the chemical formula NbON. The present disclosure also provides a semiconductor structure (100) including: a substrate (110) having at least one principal surface composed of a rutile-type compound having a rutile-type crystal structure; and a niobium oxynitride (for example, a rutile-type niobium oxynitride film (120)) grown on the one principal surface of the substrate (110), the niobium oxynitride having a rutile-type crystal structure and being represented by the chemical formula NbON.