Abstract:
In a nitride semiconductor light-emitting diode having a shape of an isosceles triangle in a top view, either Group Aa consisting of the following two mathematical formulae (Ia) and (IIa) or Group Ab consisting of the following two mathematical formulae (Ib) and (IIb) is satisfied: 20 degrees≦Angle degree α≦40 degrees (Ia) and 0 degrees≦Angle degree θ≦40 degrees (IIa) Group Aa: 90 degrees≦Angle degree α≦130 degrees (Ib) and 50 degrees≦Angle degree θ≦90 degrees (IIb). Group Ab:
Abstract:
A light emitting device in which a plurality of LED chips are arranged. Each of the plurality of LED chips include a light emitting region that is formed on a substrate, a first pad electrode that is formed on the substrate, and a through-hole that penetrates the substrate. First wiring that passes through the through-hole of one LED chip and the through-hole of an adjacent LED chip, and electrically connects the first pad electrode of the one LED chip and the first pad electrode of the adjacent LED chip is provided. The tip-end parts of the first wiring that have passed through the through-holes have, at a cross section cut at a plane that is parallel with a principal surface of the substrate, a larger cross-sectional area than the cross-sectional area of the first wiring inside the through-holes.