NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
    1.
    发明申请
    NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
    氮化物半导体发光器件

    公开(公告)号:US20150103856A1

    公开(公告)日:2015-04-16

    申请号:US14580190

    申请日:2014-12-22

    Abstract: A nitride semiconductor light emitting device includes a nitride semiconductor light emitting element and a package in which the nitride semiconductor light emitting element is accommodated. The package includes a base table in which openings are formed, a cap defining an accommodation space for accommodating the nitride semiconductor light emitting element together with the base table, lead pins passing through the openings and electrically connected to the nitride semiconductor light emitting element, and insulating members embedded in the openings to insulate the base table from the lead pins. At least parts of the insulating members which are located on an accommodation space side are made of a first insulating material containing no Si—O bond.

    Abstract translation: 氮化物半导体发光器件包括氮化物半导体发光元件和容纳氮化物半导体发光元件的封装。 所述包装包括形成有开口的基台,限定用于将氮化物半导体发光元件与基台一起容纳的容纳空间的盖,穿过开口并与氮化物半导体发光元件电连接的引脚,以及 嵌入在开口中的绝缘构件将基台与导销绝缘。 位于容纳空间侧的绝缘构件的至少一部分由不含Si-O键的第一绝缘材料制成。

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