公开(公告)号：US20180278011A1

公开(公告)日：2018-09-27

申请号：US15926499

申请日：2018-03-20

申请人： Infineon Technologies AG

发明人： Maurizio Galvano ,  Gianmaria Furlan ,  Andrea Logiudice ,  Franco Mignoli

IPC分类号： H01S5/02 ,  H01S5/022 ,  G01S7/484

CPC分类号： H01S5/0215 ,  G01S7/4813 ,  G01S7/4814 ,  G01S7/484 ,  H01S5/0224 ,  H01S5/02244 ,  H01S5/02276 ,  H01S5/0261 ,  H01S5/0425 ,  H01S5/0428 ,  H01S5/32341

摘要： A laser diode module is described herein. In accordance with a first exemplary embodiment, the laser diode module includes a first semiconductor die including at least one electronic switch, and a second semiconductor die including at least one laser diode. The second semiconductor die is bonded on the first semiconductor die using a chip-on-chip connecting technology to provide electrical connection between the electronic switch and the laser diode.

公开(公告)号：US20170244217A1

公开(公告)日：2017-08-24

申请号：US15519338

申请日：2015-10-08

申请人： KOITO MANUFACTURING CO., LTD.

发明人： Yuichi SHIBATA ,  Mitsuyuki MOCHIZUKI ,  Masashi TATSUKAWA

IPC分类号： H01S5/022 ,  H01S5/024

CPC分类号： H01S5/02476 ,  H01L23/045 ,  H01L23/3677 ,  H01L2224/48091 ,  H01S5/022 ,  H01S5/02212 ,  H01S5/02236 ,  H01S5/02244 ,  H01S5/02276 ,  H01S5/02296 ,  H01S5/024 ,  H01S5/02469 ,  H01L2924/00014

摘要： Provided is a semiconductor laser device having enhanced heat dissipation properties. A semiconductor laser device 10 comprises a stem 11, a cap 12 that is attached to an upper surface of the stem 11, a semiconductor laser element 13, and a power-feeding member 14 that is at least partially buried in the stem 11. The power-feeding member 14 comprises an element-side terminal 32 that is electrically connected to the semiconductor laser element 13, and an external terminal 33. The external terminal 33 of the power-feeding member 14 is exposed on a side surface or the upper surface of the stem 11, and an attaching surface 11b that is attached to a mounting object is provided in a lower surface of the stem 11.

公开(公告)号：US20160329679A1

公开(公告)日：2016-11-10

申请号：US14705327

申请日：2015-05-06

申请人： Microsoft Technology Licensing, LLC

发明人： David Bohn

IPC分类号： H01S5/00 ,  G02B5/06 ,  G02B5/02 ,  H01S5/022 ,  G02B27/09

CPC分类号： H01S5/0071 ,  G02B5/0278 ,  G02B5/0294 ,  G02B5/06 ,  G02B27/095 ,  H01S5/02244 ,  H01S5/02248 ,  H01S5/02268 ,  H01S5/02272 ,  H01S5/02276

摘要： A light projection system disclosed herein provides fast axis expansion of a light beam for high optical performance despite sizing constraints of a device into which the light projection system is integrated. In one implementation, the light projection system includes a diffuser, an edge-emitting semiconductor laser diode, and a printed circuit board. The diffuser defines a diffuser plane and is oriented to be substantially parallel to least a portion of the printed circuit board. The edge-emitting semiconductor laser diode emits laser light having a fast axis and a slow axis, with the fast axis of the laser light defining a fast axis plane corresponding to a path the laser light travels from the edge-emitting semiconductor laser diode. The edge-emitting semiconductor laser diode is oriented such that the fast axis plane is substantially parallel the diffuser plane between the diffuser and at least the parallel portion of the printed circuit board.

摘要翻译： 本文公开的光投射系统提供了用于高光学性能的光束的快速轴扩展，尽管光投射系统被集成到其中的装置的尺寸限制。 在一个实施方案中，光投射系统包括扩散器，边缘发射半导体激光二极管和印刷电路板。 漫射器限定漫射器平面并且被定向成基本上平行于印刷电路板的至少一部分。 边缘发射半导体激光二极管发射具有快轴和慢轴的激光，其中激光的快轴定义对应于激光从边缘发射半导体激光二极管行进的路径的快轴平面。 边缘发射半导体激光二极管被定向成使得快轴平面基本上平行于扩散器与印刷电路板的至少平行部分之间的扩散器平面。

公开(公告)号：US09184855B2

公开(公告)日：2015-11-10

申请号：US14216700

申请日：2014-03-17

申请人： FINISAR CORPORATION

发明人： James K. Guenter ,  Jimmy A. Tatum ,  Norman Brent Stapleton ,  Richard L. Bell ,  Harold Young Walker ,  Jose Joaquin Aizpuru

IPC分类号： H01S5/00 ,  H04B10/80 ,  H01S5/183 ,  H01S5/022

CPC分类号： H04B10/802 ,  H01L2224/48091 ,  H01L2924/181 ,  H01L2924/1815 ,  H01S5/02244 ,  H01S5/02288 ,  H01S5/02292 ,  H01S5/183 ,  H01L2924/00014 ,  H01L2924/00012

摘要： An opto-isolator is disclosed that include a vertical cavity surface emitting laser (VCSEL), a photodetector and a package enclosing the VCSEL and the photodetector. The photodetector is optically coupled to the VCSEL and configured to receive an output optical signal generated by the VCSEL.

摘要翻译： 公开了一种光隔离器，其包括垂直腔表面发射激光器（VCSEL），光电检测器和封装VCSEL和光电检测器的封装。 光电检测器光耦合到VCSEL并且被配置为接收由VCSEL产生的输出光信号。

公开(公告)号：US09054809B2

公开(公告)日：2015-06-09

申请号：US14175225

申请日：2014-02-07

申请人： Electronics and Telecommunications Research Institute ,  Phovel.co.LTD

发明人： Young-Tak Han ,  Jang Uk Shin ,  Sang Ho Park ,  Yongsoon Baek ,  Jeong Soo Kim

IPC分类号： H04B10/2575 ,  H01S5/022 ,  H01S5/024

CPC分类号： H04B10/2575 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/48137 ,  H01L2924/00014 ,  H01L2924/19107 ,  H01S5/02212 ,  H01S5/02236 ,  H01S5/02244 ,  H01S5/02256 ,  H01S5/02276 ,  H01S5/02415 ,  H01S5/02453 ,  H01S5/0427 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Provided is a transistor outline (TO)-CAN type optical module and an optical transmission apparatus including the same. The optical module includes a stem, a thermo-electric cooler (TEC) on the stem, a first sub-mount on the TEC, an optical element on the first sub-mount, a plurality of electrode lead wirings inserted from an outside to an inside of the stem and disposed adjacent to the TEC and the optical element, a second sub-mount between the electrode lead wirings and the optical element, radio frequency (RF) transmission lines on the second sub-mount, a plurality of bonding wires connecting the RF transmission lines and the optical element, and the RF transmission lines and the electrode lead wirings, and an impedance matching unit disposed around the RF transmission lines and the electrode lead wirings, and controlling impedances of the RF transmission lines and the electrode lead wires.

摘要翻译： 提供了一种晶体管轮廓（TO）-CAN型光学模块和包括其的光学传输装置。 所述光学模块包括杆，所述杆上的热电冷却器（TEC），所述TEC上的第一子安装件，所述第一子安装座上的光学元件，从外部插入的多个电极引线布线 在所述杆的内部并且邻近所述TEC和所述光学元件设置在所述电极引线配线和所述光学元件之间的第二子安装件，所述第二子安装座上的射频（RF）传输线，多个连接 RF传输线和光学元件以及RF传输线和电极引线配线以及设置在RF传输线和电极引线配线周围的阻抗匹配单元，以及控制RF传输线和电极引线的阻抗 。

公开(公告)号：US09040319B2

公开(公告)日：2015-05-26

申请号：US13326542

申请日：2011-12-15

申请人： Yasunori Yokoyama ,  Hisayuki Miki

发明人： Yasunori Yokoyama ,  Hisayuki Miki

IPC分类号： H01L21/02 ,  H01L33/00 ,  B82Y20/00 ,  H01S5/02 ,  H01S5/022 ,  H01S5/042 ,  H01S5/30 ,  H01S5/343

CPC分类号： H01L33/007 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02658 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01S5/0213 ,  H01S5/02244 ,  H01S5/0425 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/00 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A group-III nitride compound semiconductor light-emitting device, a method of manufacturing the group-III nitride compound semiconductor light-emitting device, and a lamp. The method includes the steps of: forming an intermediate layer (12) made of a group-III nitride compound on a substrate (11) by activating and reacting gas including a group-V element with a metal material in plasma; and sequentially forming an n-type semiconductor layer (14), a light-emitting layer (15), and a p-type semiconductor layer (16) each made of a group-III nitride compound semiconductor on the intermediate layer (12). Nitrogen is used as the group-V element, and the thickness of the intermediate layer (12) is in the range of 20 to 80 nm.

摘要翻译： III族氮化物化合物半导体发光器件，III族氮化物化合物半导体发光器件的制造方法和灯。 该方法包括以下步骤：通过使包含V族元素的气体与等离子体中的金属材料反应而形成在基底（11）上形成由III族氮化物化合物制成的中间层（12） 并在中间层（12）上依次形成由III族氮化物化合物半导体制成的n型半导体层（14），发光层（15）和p型半导体层（16）。 使用氮作为V族元素，中间层（12）的厚度在20〜80nm的范围内。

公开(公告)号：US20150103856A1

公开(公告)日：2015-04-16

申请号：US14580190

申请日：2014-12-22

申请人： PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

发明人： Hiroyuki HAGINO ,  Shinji YOSHIDA ,  Kiyoshi MORIMOTO

IPC分类号： H01S5/022 ,  H01S5/343 ,  H01S5/024 ,  H01S5/40

CPC分类号： H01S5/02212 ,  H01L33/483 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/12044 ,  H01S5/02228 ,  H01S5/02244 ,  H01S5/02276 ,  H01S5/02288 ,  H01S5/02469 ,  H01S5/34333 ,  H01S5/4025 ,  H01L2924/00014 ,  H01L2924/00

摘要： A nitride semiconductor light emitting device includes a nitride semiconductor light emitting element and a package in which the nitride semiconductor light emitting element is accommodated. The package includes a base table in which openings are formed, a cap defining an accommodation space for accommodating the nitride semiconductor light emitting element together with the base table, lead pins passing through the openings and electrically connected to the nitride semiconductor light emitting element, and insulating members embedded in the openings to insulate the base table from the lead pins. At least parts of the insulating members which are located on an accommodation space side are made of a first insulating material containing no Si—O bond.

摘要翻译： 氮化物半导体发光器件包括氮化物半导体发光元件和容纳氮化物半导体发光元件的封装。 所述包装包括形成有开口的基台，限定用于将氮化物半导体发光元件与基台一起容纳的容纳空间的盖，穿过开口并与氮化物半导体发光元件电连接的引脚，以及 嵌入在开口中的绝缘构件将基台与导销绝缘。 位于容纳空间侧的绝缘构件的至少一部分由不含Si-O键的第一绝缘材料制成。

公开(公告)号：US20150027026A1

公开(公告)日：2015-01-29

申请号：US14513809

申请日：2014-10-14

申请人： Orval E. Bowman

发明人： Orval E. Bowman

IPC分类号： F41G1/54 ,  F41G1/34

CPC分类号： H01S5/02244 ,  F41G1/00 ,  F41G1/34 ,  F41G1/35 ,  F41G1/36 ,  F41G1/393 ,  F41G1/545 ,  H01S3/025 ,  H01S5/022

摘要： Devices, apparatus, systems and methods for providing accurate linear and angular positioning with a payload mounted to a beam having freely moveable ends. The payload can be a laser pointer mounted on a firearm, which maintains the initial precise pointing during and after exposure in high G shock and vibration environments. Vertical and lateral adjustment controls can adjust minute changes in beam orientation. Precision adjustments can be performed in a zero G, one G, or high G environment and maintains the adjustment during and after being exposed to a high G shock or vibration environment.

摘要翻译： 用于提供精确的线性和角度定位的装置，装置，系统和方法，其中有效载荷被安装到具有可自由移动端部的梁上。 有效载荷可以是安装在火器上的激光指示器，在高G震动和振动环境中，曝光期间和之后都能保持初始的精确指向。 垂直和横向调节控制可以调整光束方向的微小变化。 精度调整可以在零G，一G或高G环境下执行，并在暴露于高G震动或振动环境期间和之后保持调节。

公开(公告)号：US08598597B2

公开(公告)日：2013-12-03

申请号：US11585773

申请日：2006-10-25

申请人： Kiyoshi Yamauchi

发明人： Kiyoshi Yamauchi

IPC分类号： H01L33/00

CPC分类号： H01S5/02244 ,  H01L33/62 ,  H01L33/64 ,  H01L2224/48091 ,  H01S5/02276 ,  H01L2924/00014

摘要： A semiconductor device includes: a semiconductor element; a wiring board including a connection terminal to be electrically connected to the semiconductor element; and a metal plate disposed between the semiconductor element and the wiring board; wherein the metal plate is provided with an opening for exposing the connection terminal to the semiconductor element.

摘要翻译： 半导体器件包括：半导体元件; 布线板，其包括与半导体元件电连接的连接端子; 以及设置在所述半导体元件和所述布线基板之间的金属板; 其中所述金属板设置有用于将所述连接端子暴露于所述半导体元件的开口。

公开(公告)号：US08422522B2

公开(公告)日：2013-04-16

申请号：US12485680

申请日：2009-06-16

申请人： Nobuhiro Ohkubo

发明人： Nobuhiro Ohkubo

IPC分类号： H01S3/04

CPC分类号： H01S5/02244 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01S5/02268 ,  H01L2924/00014 ,  H01L2924/00

摘要： In a semiconductor laser device, a first lead has a mounting portion for mounting a semiconductor laser element on its top surface via a submount member, and a lead portion extending from the mounting portion. Given that a direction in which a primary beam is emitted from the laser element is defined as a forward direction, and that a direction vertical to the forward direction and parallel to the top surface of the mounting portion is defined as a lateral direction, the first lead has, in one region of a side face of the mounting portion, a lateral reference surface which is parallel to a side face of the semiconductor laser element and flat. In the one region of the side face of the mounting portion, a recess portion is formed adjacent to the lateral reference surface.

摘要翻译： 在半导体激光装置中，第一引线具有用于经由基座部件将半导体激光元件安装在其顶面上的安装部和从安装部延伸的引线部。 假设从激光元件发射主光束的方向被定义为向前方向，并且将垂直于前方并且平行于安装部分的顶表面的方向定义为横向，则第一 引线在安装部分的侧面的一个区域中具有与半导体激光元件的侧面平行的平坦的横向参考表面。 在安装部分的侧面的一个区域中，邻近横向参考表面形成凹部。