公开(公告)号：US20110281443A1

公开(公告)日：2011-11-17

申请号：US13106140

申请日：2011-05-12

申请人： Pao-Hwa CHOU ,  Kota UMEZAWA ,  Yosuke WATANABE ,  Masayuki HASEGAWA

发明人： Pao-Hwa CHOU ,  Kota UMEZAWA ,  Yosuke WATANABE ,  Masayuki HASEGAWA

IPC分类号： H01L21/316 ,  C23C16/40

CPC分类号： C23C16/402

摘要： The film formation method includes transferring an object to be processed into a process chamber; controlling a temperature of the object to be processed to be equal to or lower than 350° C.; and supplying an aminosilane gas as a Si source gas and an oxidizing gas into the process chamber, wherein the oxidizing gas consists of a first oxidizing gas comprising at least one selected from the group consisting of an O2 gas and an O3 gas, and a second oxidizing gas comprising at least one selected from the group consisting of a H2O gas and a H2O2 gas, thereby forming a silicon oxide film on a surface of the object to be processed.

摘要翻译： 成膜方法包括将待处理物体转移到处理室中; 将待处理物体的温度控制在350℃以下; 将作为Si源气体和氧化气体的氨基硅烷气体供给到处理室中，其中，所述氧化气体由包含选自O 2气体和O 3气体中的至少一种的第一氧化气体构成， 包含选自H 2 O气体和H 2 O 2气体中的至少一种的氧化气体，从而在待处理物体的表面上形成氧化硅膜。

公开(公告)号：US20120164848A1

公开(公告)日：2012-06-28

申请号：US13338288

申请日：2011-12-28

申请人： Motoki FUJII ,  Masanobu MATSUNAGA ,  Kazuya YAMAMOTO ,  Kota UMEZAWA

发明人： Motoki FUJII ,  Masanobu MATSUNAGA ,  Kazuya YAMAMOTO ,  Kota UMEZAWA

IPC分类号： H01L21/318

CPC分类号： C23C16/345 ,  C23C16/45542 ,  C23C16/45578 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/76834

摘要： A plasma-assisted ALD method using a vertical furnace and being performed by repeating a cycle until a desired film thickness is obtained is disclosed. The cycle comprises introducing a source gas containing a source to be nitrided, adsorbing, purging, introducing a nitriding gas and nitriding the source, and then, purging. A flow rate of a second carrier gas during introduction of the nitriding gas is reduced relative to that of a first carrier gas during introduction of the source gas. Particularly, a flow ratio of NH3 gas as the nitriding gas to N2 gas as the second carrier gas is 50:3 or less.

摘要翻译： 公开了使用垂直炉的等离子体辅助ALD方法，并且通过重复循环直到获得所需的膜厚度来进行。 该循环包括引入含氮源的源气体，吸附，净化，引入氮化气体和氮化氮源，然后进行清洗。 在引入氮化气体期间，第二载气的流量相对于第一载气在引入源气体时的流量减小。 特别地，作为氮化气体的NH 3气体与作为第二载气的N 2气体的流量比为50:3以下。