公开(公告)号：US06632751B2

公开(公告)日：2003-10-14

申请号：US09892269

申请日：2001-06-27

申请人： Paul Mertens ,  Marc Meuris

发明人： Paul Mertens ,  Marc Meuris

IPC分类号： H01L2100

CPC分类号： H01L21/67057 ,  B08B3/04 ,  F26B13/10 ,  F26B13/28 ,  H01L21/67028 ,  Y10S134/902

摘要： The present invention is related to a method and apparatus for liquid treating and drying a substrate, such as a semiconductor wafer, the method comprising the step of immersing a substrate or a batch of substrates in a tank filled with a liquid, and removing the substrate(s) through an opening so that a flow of the liquid takes place through the opening during removal of the substrate. Simultaneously with the removal, a reduction of the surface tension of the liquid is caused to take place near the intersection line between the liquid and the substrate. For acquiring such a tensio-active effect, a uniform flow of a gas or vapor is used, or/and a local application of heat. The invention is equally related to an apparatus for performing the method of the invention.

摘要翻译： 本发明涉及一种用于液体处理和干燥诸如半导体晶片的衬底的方法和装置，该方法包括以下步骤：将衬底或一批衬底浸入填充有液体的槽中，并除去衬底 通过开口，使得在去除基底期间通过开口发生液体流。 与去除同时，在液体和基板之间的交线处附近发生液体的表面张力的降低。 为了获得这种张力积极效应，使用气体或蒸汽的均匀流动，或/和局部施加热量。 本发明同样涉及用于执行本发明方法的装置

公开(公告)号：US06530385B2

公开(公告)日：2003-03-11

申请号：US09751569

申请日：2000-12-29

申请人： Marc Meuris ,  Paul Mertens ,  Marc Heyns

发明人： Marc Meuris ,  Paul Mertens ,  Marc Heyns

IPC分类号： B08B304

CPC分类号： H01L21/67057 ,  H01L21/67086 ,  Y10S134/902

摘要： An apparatus for wet cleaning or etching of flat substrates comprising a tank with an inlet opening and outlet opening for said substrates. Said tank contains a cleaning liquid and is installed in a gaseous environment. At least one of the openings is a slice in a sidewall of the tank and is present below the liquid-surface. In the tank there may be a portion above the liquid filled with a gas with a pressure being lower than the pressure within said environment. The method comprises the step of transferring a substrate through the cleaning or etching liquid at a level underneath the surface of said liquid making use of said apparatus.

公开(公告)号：US06851435B2

公开(公告)日：2005-02-08

申请号：US10074706

申请日：2002-02-13

申请人： Paul Mertens ,  Marc Meuris ,  Marc Heyns

发明人： Paul Mertens ,  Marc Meuris ,  Marc Heyns

IPC分类号： H01L21/00 ,  B08B3/00

CPC分类号： H01L21/67051 ,  H01L21/67028 ,  H01L21/67034 ,  Y10S134/902

摘要： A method and apparatus for dispensing a liquid on the surface of a localized zone of a substrate, for example for cleaning of etching purposes. Along with the liquid, a gaseous tensio-active substance is supplied, which is miscible with said liquid and when mixed with the liquid, reduces the surface tension of said liquid, thus containing the liquid in a local zone of the substrate surface.

摘要翻译： 一种用于在基板的局部区域的表面上分配液体的方法和装置，例如用于清洁蚀刻目的。 与液体一起供应气态张力活性物质，其与所述液体混溶，并且当与液体混合时，降低所述液体的表面张力，从而将液体包含在基底表面的局部区域中。

公开(公告)号：US06821349B2

公开(公告)日：2004-11-23

申请号：US09998889

申请日：2001-11-01

申请人： Paul Mertens ,  Marc Meuris ,  Marc Heyns

发明人： Paul Mertens ,  Marc Meuris ,  Marc Heyns

IPC分类号： B08B300

CPC分类号： H01L21/67034 ,  H01L21/67028 ,  Y10S134/902

摘要： A method and an apparatus for removing a liquid, i.e. a wet processing liquid, from at least one surface of at least one substrate is disclosed. A liquid is supplied on a surface of substrate. Simultaneously or thereafter the liquid or the substrate is locally heated to thereby reduce the surface tension of said liquid. By doing so, at least locally a sharply defined liquid-ambient boundary is created. According to the invention, the substrate is subjected to a rotary movement at a speed to guide said liquid-ambient boundary over the surface of the substrate thereby removing said liquid from said surface.

摘要翻译： 公开了一种用于从至少一个基底的至少一个表面去除液体即湿处理液体的方法和装置。 在基板的表面上供给液体。 同时或此后液体或基底局部加热，从而降低所述液体的表面张力。 通过这样做，至少在本地创建一个清晰定义的液体 - 环境边界。 根据本发明，基板以一定的速度进行旋转运动，以将所述液体 - 环境边界引导到基板的表面上，从而从所述表面移除所述液体。

公开(公告)号：US06322598B1

公开(公告)日：2001-11-27

申请号：US09363975

申请日：1999-07-29

申请人： Marc Meuris ,  Paul Mertens ,  Marc Heyns

发明人： Marc Meuris ,  Paul Mertens ,  Marc Heyns

IPC分类号： H01L2100

CPC分类号： H01L21/6835 ,  H01L21/67011 ,  H01L29/0657 ,  H01L2221/68313 ,  H01L2221/68318 ,  H01L2924/10158 ,  Y10T29/41

摘要： A semiconductor processing system for the production of semiconductor electronic devices is described, which includes a sequence of semiconductor processing steps carried out on a plurality of semiconductor processing machines, whereby the processing is carried out on discrete pieces of substrate which are smaller than conventional semiconductor wafers but may be made therefrom, or from larger diameter semiconducting wafers or from materials onto which semiconductor layers may be formed, and the discrete substrate pieces are selectably processable into the electronic devices either individually or as a plurality removably fixed to a support.

摘要翻译： 描述了用于生产半导体电子器件的半导体处理系统，其包括在多个半导体加工机器上执行的一系列半导体处理步骤，由此在比常规半导体晶片小的分立的基片上进行处理 但是可以由其形成，或者可以从较大直径的半导体晶片或从其上可以形成半导体层的材料制成，并且分立的衬底片可以可选择地可加工到电子器件中，或者可拆卸地固定到支撑件上。

公开(公告)号：US06247481B1

公开(公告)日：2001-06-19

申请号：US08881680

申请日：1997-06-24

申请人： Marc Meuris ,  Paul Mertens ,  Marc Heyns

发明人： Marc Meuris ,  Paul Mertens ,  Marc Heyns

IPC分类号： B08B304

CPC分类号： H01L21/67057 ,  H01L21/67086 ,  Y10S134/902

摘要： An apparatus for wet cleaning or etching of flat substrates comprising a tank with an inlet opening and outlet opening for said substrates. Said tank contains a cleaning liquid and is installed in a gaseous environment. At least one of the openings is a slice in a sidewall of the tank and is present below the liquid-surface. In the tank there may be a portion above the liquid filled with a gas with a pressure being lower than the pressure within said environment. The method comprises the step of transferring a substrate through the cleaning or etching liquid at a level underneath the surface of said liquid making use of said apparatus.

公开(公告)号：US06910487B2

公开(公告)日：2005-06-28

申请号：US10617288

申请日：2003-07-09

申请人： Paul Mertens ,  Marc Meuris

发明人： Paul Mertens ,  Marc Meuris

IPC分类号： F26B5/00 ,  B08B3/04 ,  F26B9/06 ,  F26B13/10 ,  F26B13/28 ,  F26B21/14 ,  H01L21/00 ,  H01L21/304

CPC分类号： H01L21/67057 ,  B08B3/04 ,  F26B13/10 ,  F26B13/28 ,  H01L21/67028 ,  Y10S134/902

摘要： The present invention is related to a method and apparatus for liquid treating and drying a substrate, such as a semiconductor wafer, the method comprising the step of immersing a substrate or a batch of substrates in a tank filled with a liquid, and removing the substrate(s) through an opening so that a flow of the liquid takes place through the opening during removal of the substrate. Simultaneously with the removal, a reduction of the surface tension of the liquid is caused to take place near the intersection line between the liquid and the substrate. For acquiring such a tensio-active effect, a uniform flow of a gas or vapor is used, or/and a local application of heat. The invention is equally related to an apparatus for performing the method of the invention.

摘要翻译： 本发明涉及一种用于液体处理和干燥诸如半导体晶片的衬底的方法和装置，该方法包括以下步骤：将衬底或一批衬底浸入填充有液体的槽中，并除去衬底 通过开口，使得在去除基底期间通过开口发生液体流。 与去除同时，在液体和基板之间的交线处附近发生液体的表面张力的降低。 为了获得这种张力积极效应，使用气体或蒸汽的均匀流动，或/和局部施加热量。 本发明同样涉及用于执行本发明方法的装置。

公开(公告)号：US06551409B1

公开(公告)日：2003-04-22

申请号：US09156437

申请日：1998-09-18

申请人： Stefan DeGendt ,  Dirk Knotter ,  Marc Heyns ,  Marc Meuris ,  Paul Mertens

发明人： Stefan DeGendt ,  Dirk Knotter ,  Marc Heyns ,  Marc Meuris ,  Paul Mertens

IPC分类号： H01L21312

CPC分类号： G03F7/42 ,  G03F7/423 ,  H01L21/02063 ,  H01L21/31116 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/76814

摘要： A method for removing organic contaminants from a semiconductor surface whereby the semiconductor is held in a tank and the tank is filled with a fluid such as a liquid or a gas. Organic contaminants, such as photoresist, photoresidue, and dry etched residue, occur in process steps of semiconductor fabrication and at times, require removal. The organic contaminants are removed from the semiconductor surface by holding the semiconductor inside a tank. The method is practiced using gas phase processing. The tank is filled with a gas mixture, comprising water vapor and ozone.

摘要翻译： 一种从半导体表面去除有机污染物的方法，由此将半导体保持在罐中，并且罐中充满诸如液体或气体的流体。 有机污染物，例如光致抗蚀剂，光致抗蚀剂和干蚀刻残留物，在半导体制造的工艺步骤中发生，有时需要去除。 通过将半导体保持在罐内，从半导体表面去除有机污染物。 该方法采用气相处理。 该罐装有气体混合物，包括水蒸气和臭氧。

公开(公告)号：US06472294B2

公开(公告)日：2002-10-29

申请号：US09933495

申请日：2001-08-20

申请人： Marc Meuris ,  Marc Heyns ,  Paul Mertens

发明人： Marc Meuris ,  Marc Heyns ,  Paul Mertens

IPC分类号： H01L2170

CPC分类号： H01L21/6835 ,  H01L21/67011 ,  H01L29/0657 ,  H01L2221/68313 ,  H01L2221/68318 ,  H01L2924/10158 ,  Y10T29/41

摘要： A semiconductor processing system for the production of semiconductor electronic devices is described, which includes a sequence of semiconductor processing steps carried out on a plurality of semiconductor processing machines, whereby the processing is carried out on discrete pieces of substrate which are smaller than conventional semiconductor wafers but may be made therefrom, or from larger diameter semiconducting wafers or from materials onto which semiconductor layers may be formed, and the discrete substrate pieces are selectably processable into the electronic devices either individually or as a plurality removably fixed to a support.

摘要翻译： 描述了用于生产半导体电子器件的半导体处理系统，其包括在多个半导体加工机器上执行的一系列半导体处理步骤，由此在比常规半导体晶片小的分立的基片上进行处理 但是可以由其形成，或者可以从较大直径的半导体晶片或从其上可以形成半导体层的材料制成，并且分立的衬底片可以可选择地可加工到电子器件中，或者可拆卸地固定到支撑件上。

公开(公告)号：US06398975B1

公开(公告)日：2002-06-04

申请号：US09553988

申请日：2000-04-20

申请人： Paul Mertens ,  Marc Meuris ,  Marc Heyns

发明人： Paul Mertens ,  Marc Meuris ,  Marc Heyns

IPC分类号： B44C122

CPC分类号： H01L21/67051 ,  H01L21/67028 ,  H01L21/67034 ,  Y10S134/902

摘要： A method and apparatus for dispensing a liquid on the surface of a localized zone of a substrate, for example for cleaning of etching purposes. Along with the liquid, a gaseous tensio-active substance is supplied, which is miscible with said liquid and when mixed with the liquid, reduces the surface tension of said liquid, thus containing the liquid in a local zone of the substrate surface.