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14 条记录 (耗时 0.016 秒)

    Light-Emitting Device
    2.
    发明申请
    Light-Emitting Device 有权
    发光装置

    公开(公告)号：US20140140074A1

    公开(公告)日：2014-05-22

    申请号：US14131624

    申请日：2012-06-04

    申请人： Peng Chen ,  Hao Li ,  Tingming Liu ,  Shengmei Zheng

    发明人： Peng Chen ,  Hao Li ,  Tingming Liu ,  Shengmei Zheng

    IPC分类号： F21V17/16 ,  F21V29/00

    CPC分类号： F21V17/16 ,  F21S4/28 ,  F21V3/062 ,  F21V17/164 ,  F21V19/004 ,  F21V19/0045 ,  F21V29/70 ,  F21V29/75 ,  F21V29/76 ,  F21Y2103/10 ,  F21Y2115/10

    摘要： A light-emitting device, comprising: a cover (1), a heat sink (2) and a light-emitting assembly (3), wherein the heat sink (2) has at least one first locking part (a), the cover (1) has at least one second locking part (b) corresponding to the first locking part (a), the second locking part (b) engages with the first locking part (a) to form an enclosed cavity (5) for the light-emitting assembly (3), and the second locking part (b) has a pressing part (b1) pressing the light-emitting assembly (3) against the heat sink (2).

    摘要翻译： 一种发光装置，包括：盖（1），散热器（2）和发光组件（3），其中所述散热器（2）具有至少一个第一锁定部分（a），所述盖 （1）具有对应于第一锁定部分（a）的至少一个第二锁定部分（b），第二锁定部分（b）与第一锁定部分（a）接合以形成用于光的封闭空腔（5） （3），第二锁定部（b）具有将发光组件（3）压靠在散热器（2）上的按压部（b1）。

    LED LUMINAIRES BASED ON COLOR MIXING AND REMOTE PHOSPHOR ARRANGEMENT
    4.
    发明申请
    LED LUMINAIRES BASED ON COLOR MIXING AND REMOTE PHOSPHOR ARRANGEMENT 审中-公开
    基于颜色混合和远程磷光体布置的LED路灯

    公开(公告)号：US20140233211A1

    公开(公告)日：2014-08-21

    申请号：US14241459

    申请日：2012-08-09

    申请人： Peng Chen ,  Aiai Li ,  Tingming Liu ,  Shengmei Zheng

    发明人： Peng Chen ,  Aiai Li ,  Tingming Liu ,  Shengmei Zheng

    IPC分类号： F21K99/00

    CPC分类号： F21V9/30 ,  F21K9/64 ,  F21S4/20 ,  F21S8/02 ,  F21V3/12 ,  F21Y2103/10 ,  F21Y2113/13 ,  F21Y2115/10

    摘要： In various embodiments, a luminaire may include: two or more groups of light emitting elements, each group of light emitting elements having respective wavelength range; and a fluorescence component being capable of generating fluorescence under excitation of the light emitted from said light emitting elements, wherein said fluorescence component is spaced apart from said light emitting elements in a light propagation direction of said light emitting elements, and the light of each group of said light emitting elements is combined with said fluorescence into white light.

    摘要翻译： 在各种实施例中，灯具可以包括：两组或更多组发光元件，每组发光元件具有相应的波长范围; 以及能够在从所述发光元件发射的光的激发下产生荧光的荧光成分，其中所述荧光成分在所述发光元件的光传播方向上与所述发光元件间隔开，并且每组的光 的所述发光元件与所述荧光结合成白光。

    Light emitting diode device, method of fabrication and use thereof
    6.
    发明授权
    Light emitting diode device, method of fabrication and use thereof 有权
    发光二极管装置及其制造方法及其应用

    公开(公告)号：US07847306B2

    公开(公告)日：2010-12-07

    申请号：US11588719

    申请日：2006-10-27

    申请人： Jian Feng ,  Hung-Shen Chu ,  Shengmei Zheng

    发明人： Jian Feng ,  Hung-Shen Chu ,  Shengmei Zheng

    IPC分类号： H01L27/15

    CPC分类号： H01L33/54 ,  H01L33/46 ,  H01L33/483 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/00014

    摘要： A light emitting diode device which, in use, has its light emitting region occupying a plane substantially perpendicular to a plane occupied by the surface on which the device is mounted. The primary light emission directions of the light emitting region are parallel to the surface on which the device is mounted. The device may have both its p-type and n-type semiconductor layers passivated by a layer or layers of light transmissive materials. There is a method for fabricating and mounting such a device. A plurality of the light emitting diode devices can be used in a lighting assembly for providing a plurality of independently controllable lit regions.

    摘要翻译： 一种发光二极管器件，在使用中，其发光区域占据与被安装器件的表面占据的平面基本垂直的平面。 发光区域的主要发光方向平行于装置所在的表面。 该器件可以具有被一层或多层透光材料钝化的其p型和n型半导体层。 存在用于制造和安装这种装置的方法。 多个发光二极管器件可用于照明组件中，用于提供多个可独立控制的点亮区域。

    Light emitting diode device, and manufacture and use thereof
    7.
    发明授权
    Light emitting diode device, and manufacture and use thereof 有权
    发光二极管装置及其制造和使用

    公开(公告)号：US07800122B2

    公开(公告)日：2010-09-21

    申请号：US11516564

    申请日：2006-09-07

    申请人： Kuo An Chiu ,  Jian Feng ,  Huaijun Peng ,  Hung Shen Chu ,  Shengmei Zheng

    发明人： Kuo An Chiu ,  Jian Feng ,  Huaijun Peng ,  Hung Shen Chu ,  Shengmei Zheng

    IPC分类号： H01L33/10

    CPC分类号： H01L33/44 ,  H01L33/20 ,  H01L33/46 ,  H01L2933/0083

    摘要： A light emitting diode device includes a multi-layer stack of materials including a p-layer, a n-layer, and a light generating region for emission of light in a primary emission direction towards one of the p- and n-layers; a substantially transparent layer located at or adjacent said one of the p- and n-layers, having a first surface facing said one of the p- and n-layers and an opposed second surface; and a reflective surface formed at or adjacent the second surface of the transparent layer for directing at least a portion of the emitted light in a direction away from the primary emission direction so as to enhance light emission from a side of the light emitting diode device.

    摘要翻译： 发光二极管装置包括多层堆叠的材料，包括p层，n层和发光区域，用于沿主发射方向朝向p层和n层之一发射光; 位于或邻近所述p层和n层之一的基本上透明的层，具有面对所述p层和n层之一的第一表面和相对的第二表面; 以及形成在所述透明层的第二表面处或邻近所述透明层的第二表面的反射表面，用于沿远离所述主发射方向的方向引导所述发射光的至少一部分，以便增强从所述发光二极管器件的侧面的光发射。

    METHOD OF PRODUCING THIN SEMICONDUCTOR STRUCTURES
    8.
    发明申请
    METHOD OF PRODUCING THIN SEMICONDUCTOR STRUCTURES 有权
    生产薄膜半导体结构的方法

    公开(公告)号：US20090218590A1

    公开(公告)日：2009-09-03

    申请号：US12415467

    申请日：2009-03-31

    申请人： Yong Cai ,  HungShen Chu ,  Shengmei Zheng ,  Ka Wah Chan

    发明人： Yong Cai ,  HungShen Chu ,  Shengmei Zheng ,  Ka Wah Chan

    IPC分类号： H01L33/00 ,  H01L21/02

    CPC分类号： H01L33/0079 ,  H01L33/0095 ,  H01L33/44

    摘要： A method of making a thin gallium-nitride (GaN)-based semiconductor structure is provided. According to one embodiment of the invention, the method includes the steps of providing a substrate; sequentially forming one or more semiconductor layers on the substrate; etching a pattern in the one or more semiconductor layers; depositing a dielectrics layer; forming a photoresist on a portion of the dielectrics layer, wherein the portion of the dielectrics layer is deposited on the one or more semiconductor layers; depositing a primer; removing the photoresist layer, wherein the primer on the photoresist is also removed; depositing a superhard material, wherein the superhard material forms in the pattern; and removing the substrate. Accordingly, the superhard material may be selectively deposited in only areas where the superhard material is desired. Vertical GaN-based light emitting devices may then be formed by cutting the semiconductor structure.

    摘要翻译： 提供一种制造薄氮化镓（GaN）基半导体结构的方法。 根据本发明的一个实施例，该方法包括以下步骤：提供衬底; 在衬底上依次形成一个或多个半导体层; 蚀刻所述一个或多个半导体层中的图案; 沉积介电层; 在所述电介质层的一部分上形成光致抗蚀剂，其中所述电介质层的所述部分沉积在所述一个或多个半导体层上; 沉积底漆; 去除光致抗蚀剂层，其中光致抗蚀剂上的底漆也被除去; 沉积超硬材料，其中超硬材料以图案形成; 并去除衬底。 因此，超硬材料可以选择性地沉积在仅需要超硬材料的区域中。 然后可以通过切割半导体结构来形成垂直的GaN基发光器件。

    Semiconductor device having current spreading layer
    9.
    发明授权
    Semiconductor device having current spreading layer 有权
    具有电流扩展层的半导体器件

    公开(公告)号：US07834373B2

    公开(公告)日：2010-11-16

    申请号：US11638638

    申请日：2006-12-12

    申请人： Jian Feng ,  Hung-Shen Chu ,  Shengmei Zheng

    发明人： Jian Feng ,  Hung-Shen Chu ,  Shengmei Zheng

    IPC分类号： H01L33/36

    CPC分类号： H01L33/42 ,  H01L33/14 ,  H01L33/38

    摘要： A semiconductor device has a current spreading layer between a semiconductor material and an electrode for connecting the semiconductor material to an electrical power supply. The current spreading layer has two or more sub-layers of a first conductive material with patterned regions of a second conductive material distributed between the sub-layers for spreading an electrical current passing between the electrode and the semiconductor material. The second material has an ohmic resistance lower than the first material.

    摘要翻译： 半导体器件在半导体材料和用于将半导体材料连接到电源的电极之间具有电流扩展层。 电流扩展层具有两个或更多个第一导电材料的子层，其中分布在子层之间的第二导电材料的图案化区域，用于扩散通过电极和半导体材料之间的电流。 第二种材料具有低于第一种材料的欧姆电阻。

    Light emitting diode device, method of fabrication and use thereof
    10.
    发明申请
    Light emitting diode device, method of fabrication and use thereof 有权
    发光二极管装置及其制造方法及其应用

    公开(公告)号：US20080093607A1

    公开(公告)日：2008-04-24

    申请号：US11588719

    申请日：2006-10-27

    申请人： Jian Feng ,  Hung-Shen Chu ,  Shengmei Zheng

    发明人： Jian Feng ,  Hung-Shen Chu ,  Shengmei Zheng

    IPC分类号： H01L31/12

    CPC分类号： H01L33/54 ,  H01L33/46 ,  H01L33/483 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/00014

    摘要： A light emitting diode device which, in use, has its light emitting region occupying a plane substantially perpendicular to a plane occupied by the surface on which the device is mounted. The primary light emission directions of the light emitting region are parallel to the surface on which the device is mounted. The device may have both its p-type and n-type semiconductor layers passivated by a layer or layers of light transmissive materials. There is a method for fabricating and mounting such a device. A plurality of the light emitting diode devices can be used in a lighting assembly for providing a plurality of independently controllable lit regions.

    摘要翻译： 一种发光二极管器件，在使用中，其发光区域占据与被安装器件的表面占据的平面基本垂直的平面。 发光区域的主要发光方向平行于装置所在的表面。 该器件可以具有被一层或多层透光材料钝化的其p型和n型半导体层。 存在用于制造和安装这种装置的方法。 多个发光二极管器件可用于照明组件中，用于提供多个可独立控制的点亮区域。