摘要:
The switching functions of switching a load on and off in normal operation and in fault operation are implemented in a simple manner in an electronic branch circuit switch, which is advantageously made with silicon carbide semiconductor switching elements and has a potential-free control device, a device for detection and immediate shutoff in the event of a short-circuit, and a protection device for detection and shutoff against overload currents, as well as an overvoltage limiting device.
摘要:
A switching device including a movable contact member. The movable contact member produces an isolating distance and includes an integral semiconductor switching element.
摘要:
An electromagnetic switching device includes a contact arrangement with three contacts which couple a three-phase load to three phases of a three-phase power supply system, and disconnect the three-phase load from the three phases. Switching erosion takes place on the contacts. An overall erosion is determined for each contact, and is supplied to a drive circuit. The contact arrangement is operated by the drive circuit as a function of the overall erosion such that the overall erosion of the contacts are approximated to one another.
摘要:
A protection device includes a measurement device and a downstream evaluation device. The evaluation device is a unit for early short-circuit identification which actuates a semiconductor switch, which is preferably produced based on silicon carbide. The unit for early short-circuit identification preferably operates with switching thresholds which can be predetermined for the product of the current and the current rate of change, or on the basis of tolerant locus curves. In the latter case, different power factors (0.1
摘要:
A switching device includes a working circuit, to which an operating voltage can be or is applied to which has at least one electronic switching element. This switching element includes at least one control terminal for applying a switching signal and is switched off or switched on depending on the switching signal. At least one electronic protection element is for protecting the switching element in its switched state from excessive Joule losses in the event of danger, especially in the event of an overload or a short circuit. The protection element bears the predominant part of the operating voltage that is released at the working circuit. The switching device includes a switching-off device, which, in the event of danger, automatically switches the switching element to the switched off state, using the energy contained in the operating current or the operating voltage passing through the working circuit or the voltage that is released at the working circuit or at the protection element exceeds a predetermined upper limit value.
摘要:
An electronic switch with a switching element of the type of a semiconductor switch with the mode of operation of at least one FET, so that due to the technology it also has an internal body diode in inverse operation. A control circuit for executing the operating commands is set up so that gate in inverse operation receives such a voltage that the body diode is still currentless. In addition, a functional unit of the control circuit is set up to cause the switching element to assume the ON conducting state as a function of a commutation voltage or a commutation current, i.e., in inverse operation.
摘要:
An AC power controller includes at least two semiconductor regions reverse-connected in series. Each semiconductor region has an electron donor (source), an electron sink (drain) and an electron flow control electrode (gate) with characteristic curves such as those exhibited by FETs. Each semiconductor region also has an internal body diode. The gate-source voltage of a respective semiconductor region in the forward direction is set to be large enough to establish a desired limiting of the drain-source current. Yet, the gate-source voltage of the semiconductor region in the inverse mode is set to be large enough for the body diode to remain de-energized.
摘要:
A solid-state switching element that works with at least one semiconductor region or a pair of antiserially arranged semiconductor regions having characteristic curves similar to those of FETs. An internal body diode in inverse operation is also provided. In addition to having a drain and a gate, each of the semiconductor regions has two source electrodes, with several cells combined with the electrodes in cell design. One source serves as a load current electrode, called a load source, and the other source is available as a gate electrode, called a control source. The effective semiconductor region of the load source is larger than the effective semiconductor region of the control source.
摘要:
A switch for a high-voltage direct current transmission path includes a vacuum circuit breaker for disconnecting the transmission path and a gas-insulated circuit breaker for disconnecting the transmission path. The gas-insulated circuit breaker is connected in series with the vacuum circuit breaker. A device is provided for building up a counter-current against the current in the transmission path for the purpose of reducing the current across the vacuum circuit breaker. The elements of the switch are actuated by a control device in such a way that the switch is switched off at or close to the zero crossing of the current.
摘要:
An electromagnetic drive unit is disclosed, including a yoke and a movable armature. In at least one embodiment, the yoke and the armature have a matched shape so that, when the electromagnetic drive unit is activated, the armature is adapted to at least partially cross the yoke. An electromechanical switching device is also disclosed.