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    Method of making a polymer device
    6.
    发明授权
    Method of making a polymer device 有权
    制造聚合物装置的方法

    公开(公告)号：US07718549B2

    公开(公告)日：2010-05-18

    申请号：US10566984

    申请日：2004-08-11

    申请人： Lay-lay Chua ,  Peter Kian-Hoon Ho ,  Henning Sirringhaus ,  Richard Henry Friend

    发明人： Lay-lay Chua ,  Peter Kian-Hoon Ho ,  Henning Sirringhaus ,  Richard Henry Friend

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L51/0003 ,  B82Y10/00 ,  B82Y30/00 ,  H01L51/0012 ,  H01L51/0028

    摘要： A method of making a transistor having first and second electrodes, a semiconductive layer, and a dielectric layer; said semiconductive layer comprising a semiconductive polymer and said dielectric layer comprising an insulating polymer; characterised in that said method comprises the steps of: (i) depositing on the first electrode a layer of a solution containing material for forming the semiconductive layer and material for forming the dielectric layer; and (ii) optionally curing the layer deposited in step (i); wherein, in step (i), the solvent drying time, the temperature of the first electrode and the weight ratio, of (material for forming the dielectric layer): (material for forming the semiconductive layer) in the solution are selected so that the material for forming the semiconductive layer and the material for forming the dielectric layer phase separate by self-organisation to form an interface between the material for forming the semiconductive layer and the material for forming the dielectric layer.

    摘要翻译： 一种制造具有第一和第二电极的晶体管的方法，半导体层和电介质层; 所述半导体层包括半导体聚合物，所述介电层包含绝缘聚合物; 其特征在于所述方法包括以下步骤：（i）在第一电极上沉积含有用于形成半导体层的材料的溶液层和用于形成介电层的材料; 和（ii）任选地固化在步骤（i）中沉积的层; 其中，在步骤（i）中，选择溶液中的（用于形成介电层的材料）的溶剂干燥时间，第一电极的温度和重量比：（用于形成半导体层的材料），使得 用于形成半导体层的材料和用于形成电介质层相的材料通过自组织分离，以在用于形成半导体层的材料和用于形成电介质层的材料之间形成界面。

    Dual-Gate Transistors
    7.
    发明申请
    Dual-Gate Transistors 审中-公开
    双栅晶体管

    公开(公告)号：US20080283825A1

    公开(公告)日：2008-11-20

    申请号：US11547269

    申请日：2005-04-05

    申请人： Lay-Lay Chua ,  Peter Kian-Hoon Ho ,  Richard Henry Friend

    发明人： Lay-Lay Chua ,  Peter Kian-Hoon Ho ,  Richard Henry Friend

    IPC分类号： H01L51/05

    CPC分类号： H01L51/0508 ,  H01L27/283 ,  H01L51/0512 ,  H01L51/0554

    摘要： A field effect transistor device comprising: a source electrode; a drain electrode; a semiconductive region comprising an organic semiconductor material and defining a channel of the device between the source electrode and the drain electrode; a first gate structure comprising a first gate electrode and a first dielectric region located between the first gate electrode and the semiconductive region; and a second gate structure comprising a second gate electrode and a second dielectric region located between the second gate electrode and the semiconductive region; whereby the conductance of the semiconductor region in the channel can be influenced by potentials applied separately or to both the first gate electrode and the second gate electrode.

    摘要翻译： 一种场效应晶体管器件，包括：源电极; 漏电极; 半导体区域，包括有机半导体材料，并且限定所述源电极和所述漏电极之间的所述器件的沟道; 第一栅极结构，包括位于第一栅极电极和半导体区域之间的第一栅极电极和第一电介质区域; 以及第二栅极结构，其包括位于所述第二栅极电极和所述半导体区域之间的第二栅电极和第二电介质区域; 由此沟道中的半导体区域的电导可以受单独施加的电位或第一栅极电极和第二栅极电极的影响。

    DUAL-GATE TRANSISTORS
    10.
    发明申请
    DUAL-GATE TRANSISTORS 审中-公开
    双门极晶体管

    公开(公告)号：US20120154025A1

    公开(公告)日：2012-06-21

    申请号：US13345038

    申请日：2012-01-06

    申请人： Lay-Lay CHUA ,  Peter Kian-Hoon Ho ,  Richard Henry Friend

    发明人： Lay-Lay CHUA ,  Peter Kian-Hoon Ho ,  Richard Henry Friend

    IPC分类号： G05F3/02

    CPC分类号： H01L51/0508 ,  H01L27/283 ,  H01L51/0512 ,  H01L51/0554

    摘要： A field effect transistor device comprising: a source electrode; a drain electrode; a semiconductive region comprising an organic semiconductor material and defining a channel of the device between the source electrode and the drain electrode; a first gate structure comprising a first gate electrode and a first dielectric region located between the first gate electrode and the semiconductive region; and a second gate structure comprising a second gate electrode and a second dielectric region located between the second gate electrode and the semiconductive region; whereby the conductance of the semiconductor region in the channel can be influenced by potentials applied separately or to both the first gate electrode and the second gate electrode.

    摘要翻译： 一种场效应晶体管器件，包括：源电极; 漏电极; 半导体区域，包括有机半导体材料，并且限定所述源电极和所述漏电极之间的所述器件的沟道; 第一栅极结构，包括位于第一栅极电极和半导体区域之间的第一栅极电极和第一电介质区域; 以及第二栅极结构，包括位于所述第二栅极电极和所述半导体区域之间的第二栅电极和第二电介质区域; 由此沟道中的半导体区域的电导可以受单独施加的电位或第一栅极电极和第二栅极电极的影响。