摘要:
A self-adjusting parking brake actuator includes a brake lever that is movable between brake-released and brake-applied positions. In addition, the parking brake cable adjust system includes a self-adjustment assembly having a frame; a rack mounted for movement relative to the frame along a longitudinal direction of the rack in a tension direction and an opposite direction; a cable connector for operatively connecting the rack to a brake cable, a first resilient member biasing the rack relative to the frame along its longitudinal direction in the tensioning direction, a primary locking device configured to engage the rack and permit movement of the rack relative to the frame in the tensioning direction only; a secondary locking device moveable between (a) a locking to lock the primary locking device to prevent adjusting movement of the rack relative to the frame in the tensioning direction, and (b) a releasing position to permit the primary locking device to allow adjusting movement of the rack relative to the frame in the tensioning direction by the biasing of the resilient member; and a second resilient member biasing the secondary locking device to the locking position.
摘要:
A self-adjusting parking brake actuator includes a brake lever that is movable between brake-released and brake-applied positions. In addition, the parking brake cable adjust system includes a self-adjustment assembly having a frame; a rack mounted for movement relative to the frame along a longitudinal direction of the rack in a tension direction and an opposite direction; a cable connector for operatively connecting the rack to a brake cable, a first resilient member biasing the rack relative to the frame along its longitudinal direction in the tensioning direction, a primary locking device configured to engage the rack and permit movement of the rack relative to the frame in the tensioning direction only; a secondary locking device moveable between (a) a locking to lock the primary locking device to prevent adjusting movement of the rack relative to the frame in the tensioning direction, and (b) a releasing position to permit the primary locking device to allow adjusting movement of the rack relative to the frame in the tensioning direction by the biasing of the resilient member; and a second resilient member biasing the secondary locking device to the locking position.
摘要:
The present invention provides for a brake actuator for use in a motor vehicle. In a motor vehicle with one or more brakes activated by a cable system, there is a lever, a pawl resiliently biased to engage a sector, and a cam member. Connected to the cam member is a cable that can tension and release the pawl by movement of a button that is slidably engaged with the cam member.
摘要:
A brake actuator comprising: a mount including an input lever, a pivotal shaft; an operative output member connected to the shaft, a connector arm positioned adjacent the input lever and spaced axially from the output member; and an adjustable connection device, comprising: a link; a first connector connecting the link to the input lever, wherein the first connector comprises a seat provided on the input lever and supporting the link and a seat support structure between the input lever and the seat for supporting the seat; and a second connector connecting the link to the connector arm; to connect the input lever to the connector arm and the shaft via the link such that, when the output member is connected to one or more cables, movement of the input lever in either the applying or releasing directions pivots the shaft to apply or release tension to the cables. Further, the adjustable connection device enables adjustment of a distance along the link between the first connector connecting the link to the input lever and the second connector connecting the link to the connector arm to thereby pivot the shaft and the output member relative to the lever, allowing for adjustment of cable tension.
摘要:
A method of manufacturing an integrated circuit (IC) can utilizes semiconductor substrate configured in accordance with a trench process. The substrate utilizes trenches in a base layer to induce stress in a layer. The substrate can include silicon. The trenches define pillars on a back side of a bulk substrate or base layer of a semiconductor-on-insulator (SOI) wafer.
摘要:
A system and method for providing copper interconnect in a trench formed in a dielectric is disclosed. In one aspect, the method and system include providing a copper layer; removing a portion of the copper layer outside of the trench; annealing the copper layer; and providing a layer disposed above the copper layer. In another aspect, the method and system include providing a copper interconnect formed in a trench on a dielectric. The copper interconnect includes a copper layer disposed in the trench and a layer disposed above the copper layer. The copper layer has a bamboo structure at least one grain. The at least one grain has substantially one orientation.
摘要:
An ultraviolet light absorbent silicon oxynitride layer overlies a memory cell including a pair of source/drains, a gate insulator, a floating gate, a dielectric layer, and a control gate. A conductor is disposed through the silicon oxynitride layer for electrical connection to the control gate, and another conductor is disposed through the silicon oxynitride layer for electrical connection to a source/drain.
摘要:
An integrated circuit (IC) utilizes a strained layer. The substrate can utilize trenches in a base layer to induce stress in a layer. The trenches define pillars on a back side of a bulk substrate or base layer of a semiconductor-on-insulator (SOI) wafer.
摘要:
Planarized STI with minimized topography is formed by selectively etching back the dielectric trench fill with respect to the polish stop film prior to removing the polish stop film. Embodiments include etching back a silicon oxide trench filled to a depth of about 200 Å to about 1,500 Å, and then stripping a silicon nitride polish stop layer leaving a substantially planarized surface, thereby improving the accuracy of subsequent gate electrode patterning and reducing stringers.