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1.发明授权Method for generating luminescence from a buried layer in a multilayer compound semiconductor material using a liquid contact 失效使用液体接触从多层化合物半导体材料中的掩埋层产生发光的方法
公开(公告)号：US6063642A
公开(公告)日：2000-05-16
申请号：US719012
申请日：1996-09-24
IPC分类号： C25D11/32 , H01L21/3063 , H01L21/316 , H01L21/465 , H01L21/471 , H01L21/00
CPC分类号： H01L21/471 , H01L21/465 , H01S5/042 , H01S5/0425 , H01L33/40 , H01S5/183
摘要： A method is disclosed for generating light in one or more buried layers of a multilayer compound semiconductor material by contacting the material with a tansparent, electrically conducting fluid and passing current between the fluid and the semiconductor material. The measured characteristics of the light emitted from a first semiconductor material may be compared with those measured from a second semiconductor material of known properties, and the properties of the first semiconductor material calculated. Uniformity maps of the compound semiconductor material may be prepared using the patterns of various light emission characteristics measured across the surface of the material.
摘要翻译： 公开了一种用于在多层化合物半导体材料的一个或多个掩埋层中产生光的方法，该材料通过使材料与透明导电流体接触并在流体和半导体材料之间传递电流。 可以将从第一半导体材料发射的光的测量特性与从已知性质的第二半导体材料测量的特性进行比较，并且计算第一半导体材料的性质。 可以使用在材料表面上测量的各种发光特性的图案来制备化合物半导体材料的均匀性图。
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公开(公告)号：US5559058A
公开(公告)日：1996-09-24
申请号：US339811
申请日：1994-11-15
IPC分类号： C25D11/32 , H01L21/3063 , H01L21/316 , H01L21/465 , H01L21/471 , H01L21/02
CPC分类号： H01L21/02258 , C25D11/024 , C25D11/32 , H01L21/465 , H01L21/471 , H01S5/2215 , Y10S438/913
摘要： A method of growing a native oxide on a compound semiconductor material, comprising contacting the compound semiconductor material with an oxygen containing fluid, and pulsing a current between the compound semiconductor material the fluid, is presented. A "traveling oxide" can be produced when the oxygen containing fluid etches the native oxide. To obtain smooth oxides when the compound semiconductor material contains layers of different material, the oxide growth is monitored, and the pulse parameters changed in response to the monitoring of the oxide growth.
摘要翻译： 提供了在化合物半导体材料上生长天然氧化物的方法，包括使化合物半导体材料与含氧流体接触，并且在化合物半导体材料之间脉冲化流体。 当含氧流体蚀刻天然氧化物时，可以产生“行进氧化物”。 为了在化合物半导体材料含有不同材料层时获得平滑的氧化物，监测氧化物生长，并且响应于监测氧化物生长而改变脉冲参数。
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公开(公告)号：US6167072A
公开(公告)日：2000-12-26
申请号：US92079
申请日：1998-06-05
申请人： Peter S. Zory, Jr.
发明人： Peter S. Zory, Jr.
CPC分类号： H01S5/22 , H01S5/0421 , H01S5/0654 , H01S5/0655 , H01S5/4031
摘要： A semiconductor laser structure for use having a laser substructure so constructed and arranged to have an active region in close proximity to the top surface region and separated therefrom by a separation region, the separation region having a lower refractive index than the top surface region and the active region.
摘要翻译： 一种使用的半导体激光器结构，其具有如此构造和布置成具有紧邻顶表面区域并由分离区域分离的有源区域的激光子结构，该分离区域具有比顶表面区域更低的折射率和 活跃区域。
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公开(公告)号：US06306674B1
公开(公告)日：2001-10-23
申请号：US09571468
申请日：2000-05-16
申请人： Peter S. Zory, Jr.
发明人： Peter S. Zory, Jr.
IPC分类号： H01L2100
CPC分类号： C25D11/32 , H01L21/02178 , H01L21/02233 , H01L21/02241 , H01L21/02258 , H01L21/30635 , H01L21/31666 , H01L21/465 , H01L21/471
摘要： A multilayer compound semiconductor is contacted with an electrically conducting fluid, and a current is passed between the semiconductor and the fluid. The current passes is monitored, and the current is controlled in response to the monitoring.
摘要翻译： 多层化合物半导体与导电流体接触，并且电流在半导体和流体之间通过。 监控电流通过，响应于监控来控制电流。
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公开(公告)号：US4358676A
公开(公告)日：1982-11-09
申请号：US189900
申请日：1980-09-22
IPC分类号： H01L31/0232 , H01L31/103 , H01J40/14
CPC分类号： H01L31/0232 , H01L31/1035
摘要： A high speed photodetector, for use with semi-conductor lasers or the like, is configured to receive light signals upon a beveled detector facet, directing the incident light through a semiconductor window layer to the detector's junction region.
摘要翻译： 用于半导体激光器等的高速光电检测器被配置为在斜面检测器小面上接收光信号，将入射光通过半导体窗口层引导到检测器的接合区域。
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6.发明授权
公开(公告)号：US4166253A
公开(公告)日：1979-08-28
申请号：US824690
申请日：1977-08-15
CPC分类号： H01S5/2232 , G05B2219/50018 , H01S5/2234 , H01S5/2235
摘要： In a heterostructure diode injection laser, the active layer has a region of relatively lesser thickness in registration with a stripe geometry contact. Increased gain within the region of lesser thickness relative to adjacent regions of greater thickness tends to effectively confine lasing operation to the thinner or constricted region. The dimensions of the constricted active region may be readily selected to discriminate against multifilament lasing modes in order to produce a single spot laser beam over a wide range of injection levels.
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