公开(公告)号：US20060166474A1

公开(公告)日：2006-07-27

申请号：US11050790

申请日：2005-01-27

申请人： Philippe Vereecken ,  Veeraraghavan Basker ,  Cyril Cabral ,  Emanuel Cooper ,  Hariklia Deligianni ,  Martin Frank ,  Rajarao Jammy ,  Vamsi Paruchuri ,  Katherine Saenger ,  Xiaoyan Shao

发明人： Philippe Vereecken ,  Veeraraghavan Basker ,  Cyril Cabral ,  Emanuel Cooper ,  Hariklia Deligianni ,  Martin Frank ,  Rajarao Jammy ,  Vamsi Paruchuri ,  Katherine Saenger ,  Xiaoyan Shao

IPC分类号： H01L21/20

CPC分类号： H01L21/2885 ,  C25D3/50 ,  C25D5/02 ,  C25D5/024 ,  C25D5/54 ,  C25D7/123 ,  C25D9/04 ,  C25F3/14 ,  H01L21/28079 ,  H01L21/28114 ,  H01L21/76885 ,  H01L29/513 ,  H01L29/517 ,  H01L29/78648

摘要： A method is provided for electroplating a gate metal or other conducting or semiconducting material directly on a dielectric such as a gate dielectric. The method involves selecting a substrate, dielectric layer, and electrolyte solution or melt, wherein the combination of the substrate, dielectric layer, and electrolyte solution or melt allow an electrochemical current to be passed from the substrate through the dielectric layer into the electrolyte solution or melt. Methods are also provided for electrochemical modification of dielectrics utilizing through-dielectric current flow.

摘要翻译： 提供了一种用于将栅极金属或其它导电或半导体材料直接电镀在诸如栅极电介质的电介质上的方法。 该方法包括选择衬底，电介质层和电解质溶液或熔体，其中衬底，电介质层和电解质溶液或熔体的组合允许电化学电流从衬底通过电介质层进入电解质溶液或 熔化。 还提供了利用电介质电流流动的电介质电化学修饰方法。

公开(公告)号：US20070256937A1

公开(公告)日：2007-11-08

申请号：US11417146

申请日：2006-05-04

申请人： Veeraraghavan Basker ,  John Cotte ,  Hariklia Deligianni ,  Matteo Flotta

发明人： Veeraraghavan Basker ,  John Cotte ,  Hariklia Deligianni ,  Matteo Flotta

IPC分类号： C25D7/12

CPC分类号： C25D5/54 ,  C25D5/006 ,  C25D5/02 ,  C25D7/123 ,  C25D11/005 ,  C25D11/024 ,  C25D17/001 ,  C25F3/14 ,  H01L21/28079 ,  H01L21/2885

摘要： An electrochemical process comprising: providing a 125 mm or larger semiconductor wafer in electrical contact with a conducting surface, wherein at least a portion of the semiconductor wafer is in contact with an electrolytic solution, said semiconductor wafer functioning as a first electrode; providing a second electrode in the electrolytic solution, the first and second electrode connected to opposite ends of an electric power source; and irradiating a surface of the semiconductor wafer with a light source as an electric current is applied across the first and the second electrodes. The invention is also directed to an apparatus including a light source and electrochemical components to conduct the electrochemical process.

摘要翻译： 一种电化学方法，包括：提供与导电表面电接触的125mm或更大的半导体晶片，其中所述半导体晶片的至少一部分与电解液接触，所述半导体晶片用作第一电极; 在所述电解液中提供第二电极，所述第一和第二电极连接到电源的相对端; 并且在第一和第二电极之间施加用作为电流的光源照射半导体晶片的表面。 本发明还涉及一种包括光源和用于进行电化学过程的电化学组分的设备。