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公开(公告)号：US20240339505A1
公开(公告)日：2024-10-10
申请号：US18317944
申请日：2023-05-16
发明人： Shen-Jie Wang , Hsin-Chiao Fang , Yen-Lin Lai
IPC分类号： H01L29/205
CPC分类号： H01L29/205
摘要： An epitaxial structure includes a first type semiconductor layer, an active layer, a second type semiconductor layer, and a lattice mismatch layer. The first type semiconductor layer includes a material of aluminum gallium indium phosphide. The active layer is disposed on a side of the first type semiconductor layer. The second semiconductor layer is disposed on a side of the active layer away from the first type semiconductor layer, and includes the material of aluminum gallium indium phosphide. The lattice mismatch layer includes the material of aluminum gallium indium phosphide and is disposed on any side of the first type semiconductor layer, the active layer, or the second type semiconductor layer. In an X-ray diffractometer analysis spectrum, at least one of the first type semiconductor layer, the active layer and the second type semiconductor layer corresponds to a main diffractive peak, the lattice mismatch layer has a secondary diffractive peak.
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公开(公告)号：US20240128397A1
公开(公告)日：2024-04-18
申请号：US17989700
申请日：2022-11-18
发明人： Hsin-Chiao Fang , Shen-Jie Wang , Yen-Lin Lai
CPC分类号： H01L33/0062 , H01L33/06 , H01L33/30 , H01L33/36
摘要： An epitaxial structure including a first epitaxial layer, a second epitaxial layer, and an interface treatment layer is provided. The first epitaxial layer is an ohmic contact layer. The second epitaxial layer is disposed on the first epitaxial layer and is a phosphide compound layer, where a material of the second epitaxial layer is different from a material of the first epitaxial layer. The interface treatment layer contacts the first epitaxial layer and the second epitaxial layer and is located between the first epitaxial layer and the second epitaxial layer. An image contrast ratio of a transmission electron microscope (TEM) of the interface treatment layer to the first epitaxial layer and an image contrast ratio of the TEM of the interface treatment layer to the second epitaxial layer are both greater than 1.005. A method for forming an epitaxial structure is also provided.
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公开(公告)号：US20210265527A1
公开(公告)日：2021-08-26
申请号：US17243577
申请日：2021-04-29
发明人： Kuang-Yuan Hsu , Chien-Chih Yen , Yen-Lin Lai , Shen-Jie Wang , Sheng-Yuan Sun
摘要： A patterned epitaxial substrate includes a substrate and a plurality of patterns. The substrate has a first zone and a second zone surrounding the first zone. The first zone is disposed around a center of the substrate. The patterns and the substrate are integrally formed, and the patterns are disposed on the substrate. The patterns include a plurality of first patterns and a plurality of second patterns. The first patterns are disposed in the first zone. The second patterns are disposed in the second zone. Sizes of the first patterns are different from sizes of the second patterns.
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公开(公告)号：US11189577B2
公开(公告)日：2021-11-30
申请号：US16840823
申请日：2020-04-06
发明人： Hsin-Chiao Fang , Shen-Jie Wang , Yen-Lin Lai
摘要： A semiconductor structure is provided. The semiconductor structure includes a substrate. The semiconductor structure also includes a buffer layer disposed on the substrate. The semiconductor structure further includes a first semiconductor layer disposed on the buffer layer. The buffer layer includes a first buffer structure and a second buffer structure partially disposed on the first buffer structure. The material of the first buffer structure is different from the material of the second buffer structure.
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公开(公告)号：US20240097070A1
公开(公告)日：2024-03-21
申请号：US17976870
申请日：2022-10-31
发明人： Hsin-Chiao Fang , Shen-Jie Wang , Yen-Lin Lai
CPC分类号： H01L33/12 , H01L33/025 , H01L33/30
摘要： A micro light-emitting component including a first type cladding layer, a light-emitting layer, a second type cladding layer, a plurality of window layers and at least one interposer is provided. The light-emitting layer is located on the first type cladding layer, and the second type cladding layer is located on the light-emitting layer. The light-emitting layer is located between the first type cladding layer and the second type cladding layer. The window layers are located on the second type cladding layer. The interposer is located between any two adjacent of the window layers. An ion doping concentration of the interposer is less than or equal to an ion doping concentration of the window layers.
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公开(公告)号：US20230299059A1
公开(公告)日：2023-09-21
申请号：US17851064
申请日：2022-06-28
发明人： Chi-Heng Chen , Kuang-Yuan Hsu , Shen-Jie Wang , Jyun-De Wu , Yi-Ching Chen , Yi-Chun Shih
IPC分类号： H01L25/075 , H01L33/10 , H01L33/38
CPC分类号： H01L25/0756 , H01L33/10 , H01L33/382 , H01L33/32
摘要： A micro light-emitting diode includes a first stacked layer, a second stacked layer, a third stacked layer, a bonding layer, at least one etch stop layer, and a plurality of electrodes. The second stacked layer is disposed between the first stacked layer and the third stacked layer. The first stacked layer includes a first active layer. The second stacked layer includes a second active layer. The third stacked layer includes a third active layer. The bonding layer is disposed between the second stacked layer and the third stacked layer. The at least one etch stop layer is at least disposed between the first active layer and the second active layer. The plurality of electrodes are respectively electrically connected with the first stacked layer, the second stacked layer, and the third stacked layer. At least one electrode of the plurality of electrodes contacts the etch stop layer.
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公开(公告)号：US20240128398A1
公开(公告)日：2024-04-18
申请号：US17994016
申请日：2022-11-25
发明人： Hsin-Chiao Fang , Shen-Jie Wang , Yen-Lin Lai
CPC分类号： H01L33/0062 , H01L33/06 , H01L33/30
摘要： An epitaxial structure includes a first epitaxial layer, a second epitaxial layer, and an interface treatment layer. The second epitaxial layer is disposed on the first epitaxial layer. The interface treatment layer is located between the first epitaxial layer and the second epitaxial layer and is in contact with the first epitaxial layer and the second epitaxial layer. The first epitaxial layer, the second epitaxial layer, and the interface treatment layer include the same material. An image contrast ratio of a transmission electron microscope (TEM) of the interface treatment layer to the first epitaxial layer and an image contrast ratio of a TEM of the interface treatment layer to the second epitaxial layer are both greater than 1.005. A method for forming an epitaxial structure is also provided.
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公开(公告)号：US20230043942A1
公开(公告)日：2023-02-09
申请号：US17732523
申请日：2022-04-29
发明人： Shen-Jie Wang , Kuang-Yuan Hsu
摘要： An epitaxial structure includes a quantum well structure, a first type semiconductor layer, and a second type semiconductor layer. The quantum well structure has an upper surface and a lower surface opposite to each other and includes at least one quantum well layer and at least one quantum barrier layer stacked alternately. The quantum well layer includes at least one patterned layer, and the patterned layer includes multiple geometric patterns. The first type semiconductor layer is disposed on the lower surface of the quantum well structure. The second type semiconductor layer is disposed on the upper surface of the quantum well structure.
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公开(公告)号：US11495709B2
公开(公告)日：2022-11-08
申请号：US17243577
申请日：2021-04-29
发明人： Kuang-Yuan Hsu , Chien-Chih Yen , Yen-Lin Lai , Shen-Jie Wang , Sheng-Yuan Sun
摘要： A patterned epitaxial substrate includes a substrate and a plurality of patterns. The substrate has a first zone and a second zone surrounding the first zone. The first zone is disposed around a center of the substrate. The patterns and the substrate are integrally formed, and the patterns are disposed on the substrate. The patterns include a plurality of first patterns and a plurality of second patterns. The first patterns are disposed in the first zone. The second patterns are disposed in the second zone. Sizes of the first patterns are different from sizes of the second patterns.
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公开(公告)号：US11329192B2
公开(公告)日：2022-05-10
申请号：US16868883
申请日：2020-05-07
发明人： Hsin-Chiao Fang , Shen-Jie Wang , Yen-Lin Lai
摘要： The embodiment of the present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate. The semiconductor structure also includes a first buffer layer disposed on the substrate. The semiconductor structure further includes a second buffer layer disposed on the first buffer layer. The semiconductor structure includes a semiconductor-based layer disposed on the second buffer layer. The second buffer layer includes aluminum, and the aluminum content of the second buffer layer gradually increases in the direction away from the substrate.
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