摘要:
The invention relates to a process for making an annealing band, the process comprising (a) producing a refractory metal powder; or refractory metal alloy powder; (b) optionally blending the powder with an oxide component or a carbide component; (c) consolidating the powder or powder blend and forming a consolidated powder component; (d) subjecting the consolidated powder component to thermo-mechanical treatment and forming a sheet, or tube; (e) cutting the sheet into a strip; and (f) forming an annealing band from the strip. Then invention also relates to annealing bands and processes for using annealing bands.
摘要:
Refractory metal products, such as tantalum, can be rejuvenated after metal consumption in selected zones by filling the zones with powder and simultaneously applying focused radiant energy to the powder.
摘要:
Refractory metal products, such as tantalum, can be rejuvenated after metal consumption in selected zones by filling the zones with powder and simultaneously applying focused radiant energy to the powder.
摘要:
A method of making sheet bar and other precursors of formed products to be made by extensive working. The method includes providing a powder metal, preferably under 100 PPM oxygen content of non-spherical particles, compacting the powder into a coherent precursor form of at least 100 pounds, whereby a precursor is provided enabling extended fabrication to a finished product form. The finished product is resistant to breakup in fabrication due to oxide inclusion effect and produces a low oxygen end product. The method can process multiple species of metals that include at least one higher melting metal and one lower melting metal to produce an alloy or micro-composite of the metals as worked, where one metal is preferably a refractory metal (Ta, Nb, W, Wo, Zr, Hf, V and Re). The process is controlled to cause powder of the higher melting metal to be extended into a fibrous form.
摘要:
The invention relates to a thin film capacitor containing (a) a substrate, (b) a first polymeric film containing an electrically conductive polymer located on the substrate, (c) a pentoxide layer selected from the group consisting of tantalum pentoxide, or niobium pentoxide, and mixtures thereof, (d) a second polymeric film containing an electrically conductive polymer located on the pentoxide layer.
摘要:
The invention relates to a thin film capacitor containing (a) a substrate, (b) a first polymeric film comprising an electrically conductive polymer located on the substrate, (c) a pentoxide layer selected from the group consisting of tantalum pentoxide, or niobium pentoxide, and mixtures thereof, (d) a second polymeric film comprising an electrically conductive polymer located on the pentoxide layer.
摘要:
The invention relates to a method that involves (a) removing graphite from at least one surface of a metal graphite composite material; (b) chemically cleaning or plasma etching the surface of the metal graphite composite material; (c) applying a metal-containing material to the surface of the chemically cleaned or plasma etched metal graphite composite material, and thereby forming an intermediate layer; (d) applying a metal coating on the intermediate layer, and thereby forming a composite material. The invention also relates to a composite material comprising (a) a metal graphite composite substrate having at least one surface that is substantially free of graphite; (b) a metal-containing intermediate layer located on a surface of the substrate; and (c) a metal coating on the intermediate layer.
摘要:
A capacitor-grade wire made from powder metallurgy containing at least niobium and silicon, wherein the niobium is the highest weight percent metal present in the niobium wire. The wire having a controlled tensile strength at finish diameter exceeds the strength of capacitor-grade wire formed by ingot metallurgy. Also, the powder metallurgy wire hardness exceeds capacitor-grade wire formed from ingot metallurgy with electrical leakage meeting the specifications normally applied to capacitor grade tantalum, niobium or niobium-zirconium lead wire at sinter temperatures of about 1150° C. and above.
摘要:
A capacitor-grade wire made from powder metallurgy containing at least niobium and silicon, wherein the niobium is the highest weight percent metal present in the niobium wire. The wire having a controlled tensile strength at finish diameter exceeds the strength of capacitor-grade wire formed by ingot metallurgy. Also, the powder metallurgy wire hardness exceeds capacitor-grade wire formed from ingot metallurgy with electrical leakage meeting the specifications normally applied to capacitor grade tantalum, niobium or niobium-zirconium lead wire at sinter temperatures of about 1150° C. and above.