公开(公告)号：US20170032967A1

公开(公告)日：2017-02-02

申请号：US15293399

申请日：2016-10-14

Applicant: Praxair Technology, Inc.

Inventor： Ashwini K. Sinha ,  Douglas C. Heiderman ,  Lloyd A. Brown ,  Serge M. Campeau ,  Robert Shih ,  Dragon Lu ,  Wen-Pin Chiu ,  Chien-Kang Kao

IPC: H01L21/265 ,  C01B23/00 ,  F17C1/00 ,  C01B3/00 ,  H01J37/317 ,  H01J37/30

CPC classification number: H01L21/265 ,  C01B3/00 ,  C01B23/00 ,  C23C14/34 ,  F17C1/005 ,  F17C2201/0109 ,  F17C2201/0114 ,  F17C2201/035 ,  F17C2201/058 ,  F17C2203/0617 ,  F17C2205/0329 ,  F17C2205/0332 ,  F17C2205/0335 ,  F17C2205/0338 ,  F17C2205/035 ,  F17C2205/0385 ,  F17C2205/0391 ,  F17C2221/03 ,  F17C2223/0123 ,  F17C2225/038 ,  F17C2260/044 ,  F17C2270/0518 ,  F17C2270/0745 ,  H01J37/3002 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/31701 ,  Y02E60/321 ,  Y02E60/324 ,  Y10T137/2012

Abstract: A supply source for delivery of a CO-containing dopant gas composition is provided. The composition includes a controlled amount of a diluent gas mixture such as xenon and hydrogen, which are each provided at controlled volumetric ratios to ensure optimal carbon ion implantation performance. The composition can be packaged as a dopant gas kit consisting of a CO-containing supply source and a diluent mixture supply source. Alternatively, the composition can be pre-mixed and introduced from a single source that can be actuated in response to a sub-atmospheric condition achieved along the discharge flow path to allow a controlled flow of the dopant mixture from the interior volume of the device into an ion source apparatus.

Abstract translation: 提供用于输送含CO掺杂剂气体组合物的供应源。 该组合物包括受控量的稀释气体混合物，例如氙气和氢气，其以受控的体积比提供，以确保最佳的碳离子注入性能。 该组合物可以包装为由含CO供应源和稀释剂混合物供应源组成的掺杂剂气体试剂盒。 或者，组合物可以从单个源预混合并引入，该源可以响应于沿着排放流动路径获得的亚大气条件而被致动，以允许掺杂剂混合物从装置的内部容积受到控制的流动 离子源装置。

公开(公告)号：US20170032941A1

公开(公告)日：2017-02-02

申请号：US15293367

申请日：2016-10-14

Applicant: Praxair Technology, Inc.

Inventor： Ashwini K. Sinha ,  Stanley M. Smith ,  Douglas C. Heiderman ,  Serge M. Campeau

IPC: H01J37/32 ,  C01B3/00

CPC classification number: H01J37/3171 ,  C01B3/00 ,  H01J27/22 ,  H01J37/08 ,  H01J37/32458 ,  H01J37/32807 ,  H01J2237/006 ,  H01J2237/0473 ,  H01J2237/08 ,  H01J2237/0815 ,  H01J2237/31701 ,  H01J2237/3365 ,  Y02E60/324

Abstract: A novel composition, system and method for improving beam current during boron ion implantation are provided. In a preferred aspect, the boron ion implant process involves utilizing B2H6, 11BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.

Abstract translation: 提供了一种用于在硼离子注入期间改善束电流的新型组成，系统和方法。 在优选的方面，硼离子注入工艺涉及在特定浓度范围内使用B2H6，11BF3和H2。 在生成和注入活性氢离子物质期间使用的离子源的工作电弧电压下，选择B2H6具有高于BF 3的电离横截面。 氢气允许更高水平的B 2 H 6被引入BF 3中而不减少F离子清除。 当与常规硼前体材料产生的束电流相比时，活性硼离子产生改进的束电流，其特征在于保持或增加束电流水平而不引起离子源的劣化。