STACKED RESISTOR-CAPACITOR DELAY CELL
    1.
    发明申请

    公开(公告)号:US20200075582A1

    公开(公告)日:2020-03-05

    申请号:US16115206

    申请日:2018-08-28

    Abstract: A resistor-capacitor (RC) delay circuit includes a first capacitor at a first level, a resistor at a second level and a second capacitor at a third level. The second capacitor is electrically connected in parallel with the first capacitor. The second capacitor has a footprint within a footprint of the first capacitor. The resistor is coupled in shunt with the first capacitor and the second capacitor.

    GUARD RING FREQUENCY TUNING
    2.
    发明申请

    公开(公告)号:US20200043863A1

    公开(公告)日:2020-02-06

    申请号:US16051525

    申请日:2018-08-01

    Abstract: Aspects generally relate to tuning a guard ring in an integrated circuit. A guard ring with a gap surrounds a circuit. The level of isolation provided by the guard ring at a particular frequency can be adjusted by coupling a tuning circuit cross the gap of the guard ring. If the circuit in the guard ring is an inductive circuit the level of inductance at a particular frequency can be adjusted by selecting the appropriate tuning circuit across the gap of the guard ring.

    CO-WOUND RESISTOR
    4.
    发明申请
    CO-WOUND RESISTOR 审中-公开

    公开(公告)号:US20200051718A1

    公开(公告)日:2020-02-13

    申请号:US16058928

    申请日:2018-08-08

    Abstract: A co-wound resistor with a low parasitic inductance includes a first resistive strip having an input and a second resistive strip having an output. The second resistive strip has a similar shape as the first resistive strip. The second resistive strip is co-wound in a same direction as the first resistive strip. The second resistive strip and the first resistive strip are configured to generate a mutual inductance that cancels an inductance of the first resistive strip and the second resistive strip. The first interconnect coupling the first resistive strip to the second resistive strip. The first resistive strip, the second resistive strip and the first interconnect are on a same level.

    METAL-OXIDE-METAL CAPACITOR USING VIAS WITHIN SETS OF INTERDIGITATED FINGERS

    公开(公告)号:US20180315548A1

    公开(公告)日:2018-11-01

    申请号:US15687234

    申请日:2017-08-25

    CPC classification number: H01G4/012 H01G4/248

    Abstract: A capacitor may include a first set of conductive fingers interdigitated with a second set of conductive fingers at an interconnect layer in a preferred direction of the interconnect layer. The capacitor may also include the first set of conductive fingers interdigitated with the second set of conductive fingers at a next interconnect layer in the preferred direction of the next interconnect layer. The capacitor may further include a first set of through finger vias electrically coupling the first set of conductive fingers of the interconnect layer to the first set of conductive fingers of the next interconnect layer.

    POWER AND AREA EFFICIENT DIGITAL-TO-TIME CONVERTER WITH IMPROVED STABILITY

    公开(公告)号:US20220182065A1

    公开(公告)日:2022-06-09

    申请号:US17449250

    申请日:2021-09-28

    Abstract: A digital-to-time converter (DTC) converts a digital code into a time delay using a capacitor digital-to-analog converter (CDAC) that functions as a charging capacitor. The DTC includes a switched capacitor voltage-to-current converter for the formation of a charging current (or a discharging current) for charging (or for discharging) the charging capacitor responsive to a triggering clock edge that begins the time delay. A comparator compares a voltage on the charging capacitor to a threshold voltage to determine an end of the time delay.

    VIA-BASED VERTICAL CAPACITOR AND RESISTOR STRUCTURES

    公开(公告)号:US20200083158A1

    公开(公告)日:2020-03-12

    申请号:US16126406

    申请日:2018-09-10

    Abstract: Certain aspects of the present disclosure provide an integrated circuit (IC) that includes at least one of a via-based vertical capacitor structure or a via-based vertical resistor structure. The IC includes a substrate oriented in a horizontal plane, electrically conductive layers disposed above the substrate, and electrically insulative layers disposed above the substrate and interposed between the plurality of electrically conductive layers. At least one of the vertical capacitor structure or the vertical resistor structure is disposed in the electrically conductive layers and the electrically insulative layers.

    METAL-OXIDE-METAL CAPACITOR WITH IMPROVED ALIGNMENT AND REDUCED CAPACITANCE VARIANCE

    公开(公告)号:US20190386092A1

    公开(公告)日:2019-12-19

    申请号:US16009976

    申请日:2018-06-15

    Abstract: A capacitor has reduced misalignment in the interconnect layers and lower capacitance variance. The capacitor includes a first endcap having a first section and a second section orthogonal to the first section. The capacitor includes a first set of conductive fingers orthogonally coupled to the first section. The capacitor includes a third set of conductive fingers orthogonally coupled to the second section of the endcap and a second endcap parallel to the first section of the endcap. The capacitor includes a second set of conductive fingers orthogonally coupled to a second endcap and interdigitated with the first set of conductive fingers at a first interconnect layer. The capacitor includes a third endcap parallel to the second section of the first endcap and a fourth set of conductive fingers orthogonally coupled to the third endcap and interdigitated with the third set of conductive fingers at the first interconnect layer.

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